Electron spin resonance studies of plasma-induced polystyrene radicals

Plasma-induced polystyrene radicals were first studied by electron spin resonance (ESR). The room temperature ESR spectrum was compared with those obtained by γ-irradiation, UV-irradiation, and mechanical fracture. It was found that even less than a few seconds of plasma-irradiation gave rise to a large amount of polystyrene radicals and the ESR spectrum consisted of two types of spectra, a triplet and a single broad line. The spectral feature of the triplet was nearly identical with that of γ-irradiated polystyrene. Thus, it was assigned to the structure of a cyclohexadienyl-type radical formed by a nearly random addition of a hydrogen atom to the aromatic ring. The single broad line, thought to be an outline of multicomponent spectrum, was assigned to an immobilized dangling-bond sites at the plasma-induced crosslinked portion of the polystyrene surface.     

Different acute effects of oral and intratracheal administration of disodium arsenate and gallium arsenide on heme synthesis in rats

The acute influences of arsenic compounds on the metabolism of porphyrins and heme in various organs of rats after oral or intratracheal administration of disodium arsenate (Na₂HAsO₄) and gallium arsenide (GaAs) were examined and compared. For the oral administration experiments, 21 or 84 mg of Na₂HAsO₄, or 2 or 4 g of GaAs, per cm³ saline per kg body weight of each animal was administered to Jcl: Wistar male rats and the organs were removed after exsanguination from the vein of the right axilla under anesthesia with ether, 16 h after administration. In the case of intratracheal administration, rats given 8.2 or 16.4 mg of Na₂HAsO₄, or 0.2 or 0.4 g GaAs per cm³ saline per kg body weight were examined under the same experimental conditions as for the administration route. Increase in the body weight of rats was suppressed after intratracheal administration of the two arsenic compounds. In these rats the hematocrit value increased significantly. These changes were not shown by the orally administered rats. Elevation in δ-aminolevulinate synthase (ALA-S, EC 2.3.1.37) activity in erythroblasts by Na₂HAsO₄ was much higher after intratracheal administration than after oral administration. Suppression in the activities of δ-aminolevulinate dehydratase (ALA-D, EC 4.2.1.24) and porphobilinogen deaminase (PBG-D, EC 4.3.1.8) in peripheral erythrocytes by Na₂HAsO₄ and GaAs were stronger by intratracheal administration than by the oral route. Influences of GaAs on the activity of PBG-D in rat liver were shown to be more effective by oral administration than by the intratracheal route. Oral administration of Na₂HAsO₄ and GaAs had a stronger suppression effect on the activities of ALA-D and PBG-D in rat kidney. It seems from these results that the different extents of the influence of arsenic compounds might depend on the routes of intake.     

Characteristics of polyethylenes at low temperature studied by positron annihilation

The positron annihilation lifetime method (PAL) has been applied to study the characteristics of polyethylenes (PEs) at low temperatures between 273 and 100 K. It has been found that the intensity (I ₃) of the long-lived component of positronium (Ps) showed an increase in non-annealed PE and annealed PE in vacuo. However, PAL in PEs annealed in an atmosphere containing oxygen did not show such an increase. It has been indicated that the latter effect is due to formation of carbonyl groups through oxidation during the annealing.     

Extremely large binding energy of biexcitons in an organic-inorganic quantum-well material (C4H9NH3)2PbBr4

We have confirmed biexciton formation in an organic-inorganic hybrid quantum-well material (C₄H₉NH₃)₂PbBr₄ by photoluminescence and two-photon absorption measurements. The biexciton has extremely large binding energy, 60 meV, which to our knowledge is the largest value ever reported for a semiconductor. By analyzing the spectrum of biexciton luminescence, the biexciton gas temperature was found to be much higher than the bath temperature due to a higher local temperature arising from the large biexciton binding energy.     

Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.     

Theoretical framework and experimental procedure for modelling mesoscopic volume fraction stochastic fluctuations in fiber reinforced composites

Many engineering materials exhibit fluctuations and uncertainties on their macroscopic mechanical properties. This randomness results from random fluctuations observed at a lower scale, especially at the meso-scale where microstructural uncertainties generally occur. In the present paper, we first propose a complete theoretical stochastic framework (that is, a relevant probabilistic model as well as a non-intrusive stochastic solver) in which the volume fraction at the microscale is modelled as a random field whose statistical reduction is performed using a Karhunen–Loeve expansion. Then, an experimental procedure dedicated to the identification of the parameters involved in the probabilistic model is presented and relies on a non-destructive ultrasonic method. The combination of the experimental results with a micromechanical analysis provides realizations of the volume fraction random field. In particular, it is shown that the volume fraction can be modelled by a homogeneous random field whose spatial correlation lengths are determined and may provide conditions on the size of the meso-volumes to be considered.     

Time-resolved cavity ringdown spectroscopy on nanoparticle generation in a SiH4–H2 VHF plasma

Time-resolved cavity ringdown (τ-CRD) spectroscopy has been applied to monitor the silyl (SiH₃) radicals and nanoparticles in a pulsed very high frequency (VHF) silane-hydrogen plasma under microcrystalline silicon (μc-Si:H) deposition conditions. The measured cavity loss reveals four time intervals (I up to VI) in the first 4 s of the plasma pulse. By variation of the laser wavelength, it is demonstrated that the small cavity loss at 220 nm reflects the SiH₃ absorption in interval I. In intervals II and III, an additional cavity loss appears. This additional cavity loss corresponds to Rayleigh and Mie scattering by growing nanoparticles. Interval IV reflects the loss of nanoparticles between the electrodes during the afterglow of the plasma pulse. The evolution of the nanoparticle generation determined from the τ-CRD measurements are further confirmed by additional scanning electron microscopy analyses on the nanoparticles created in the plasma pulse.