Characteristics and structures of weak efficient surfaces of production possibility sets

This paper studies the characteristics and structure of the weak surface of the production possibility set. We apply techniques and methods of transferring a polyhedral cone from its intersection form to its sum form, identify an intersection representation of the production possibility set. We give the structure theorem of weak surface of the production possibility set, which includes three complementary slackness conditions. We define the input weak efficiency and output weak efficiency for different DEA models according to the representation of the intersection form. It investigates the characteristics of the weak surfaces, and proves the structure theorems of input weak DEA efficiency and output weak DEA efficiency. The structure theorems establish weighted combination of inputs and outputs that are weak DEA efficient. Numerical examples are provided for illustration.     

关于NF-环的构造

研究了无限的ＮＦ－环及有限的ＮＦ－环，并且给出了有限ＮＦ－环的构造．     

数学分析中的一题多解问题

通过两个积分 (一个是不定积分 ,一个是定积分 )及一个极限 ,说明如何灵活使用积分法解决积分问题 ,方法灵活、巧妙 ,适用范围广 .     

Characterization of oxide thin films using optical techniques

Thin films of oxide materials are playing a growing role as critical elements in optoelectronic devices and nanoscale devices. In this work, thin films of some typical oxides such as WO₃, Ga₂O₃ and SrTiO₃ were investigated. We present measurements of those films, using various optical techniques like photoconductivity transients over a wide time range and photo-Hall measurements. Analysis of the photo-Hall and photoconductivity data permits the determination of the contribution to the photoconductivity made by the carrier mobility and concentration. A model for dispersive carrier transport was proposed to explain the relaxation of the photoconductivity in oxide thin films. In addition, photoluminescence characterization was used to study microstructures and energy band in oxide thin films. The broad emission from oxide host, consisting of several band peaks, was likely due to a recombination process with several possible paths. The dependence of the luminescent intensity on the annealing atmosphere was associated with the presence of oxygen vacancies. It is suggested that our optical analysis efforts have improved the understanding of oxide thin films, and this should lead to the necessary advancements in a variety of devices.     

寡头垄断市场排污收费的政府调控模型

基于完全信息博弈理论,阐述了寡头垄断市场的排污收费古诺模型.建立了具有政府宏观调控机制的博弈模型,并对调控效果进行了分析.     

Preparation and Mechanical Properties of Fe3Al Nanostructured Intermetallics

Nanostructured Fe₃Al intermetallic compounds were produced by using hydrogen arc plasma method. The transmission electron microscopy experiments showed that the average particle size of the as-synthesized was about 40-nm. The change in hardness of Fe₃Al nanostructured intermetallic compounds with annealing temperatures was observed and evaluated.     

A Lower Bound for {a+b:aA, bB, and P(a,b)≠0}

Let A and B be two finite subsets of a field . In this paper, we provide a non-trivial lower bound for {a+b:aA, bB, and P(a,b)≠0} where P(x,y) [x,y].     

无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

BEPCⅡ高频发射机和环流器的调整和测试

北京正负电子对撞机升级改造工程(BEPCⅡ)将采用的频率500MHz、输出功率250kW的高频发射机和环流器已安装、调整、测试和验收完毕,这是国内建立的第一套500MHz/250kW发射机系统.本文将详细介绍机器的调测试的原理和各项测量内容及结果, 并比较设计指标和要求,来阐述此发射机的实际技术指标和测试性能.     

Demonstration of Soliton Solutions of DNLS Equation by Liouville Theorem

In the inverse scattering transform (IST), the reflectionless Jost solutions are combined by their analytic properties in the complex spectrum parameter plane, and then can be shown to satisfy the two Lax equations indeed by Liouville theorem. So the corresponding soliton solutions certainly satisfy the nonlinear equation by compatibility condition. Especially the multi-soliton solutions of DNLS equation can be demonstrated in this way. PACS Numbers: 05.45.Yv, 02.30.-f, 11.10.Ef