变In组分沟道的MM-HEMT材料电子输运特性研究

在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用.通过低温下二维电子气横向电阻的量子振荡现象，结合变温度的Hall测量，系统研究了不同In组分沟道MM_HEMT器件中子带电子迁移率和浓度随温度的变化关系.结果表明，沟道中In组分为0.65的样品，材料电学性能最好，In组分高于0.65的样品，严重的晶格失配将产生位错，引起迁移率下降，大大影响材料和器件的性能. 关键词： 变缓冲层高迁移率晶体管 Shubnikov_de Hass 振荡     

Polarization-Insensitive All-Optical Time-Division Demultiplexer Constructed with a Nonlinear Loop Interferometer

A polarization-insensitive 40-Gb/s time-division demultiplexer was demonstrated in a polarization-diversity loop configuration. The power penalty was measured to be 2.3 dB at a bit error rates of 10-9 for 10 Gb/s output signals.     

Synthesis,and Antimycobacterial and Cytotoxic Evaluation of Certain Fluoroquinolone Derivatives

Certain 1‐ethyl‐ and 1‐aryl‐6‐fluoro‐1,4‐dihydroquinol‐4‐one derivatives were synthesized and evaluated for antimycobacterial and cytotoxic activities. Preliminary results indicated that, for 1‐aryl‐6‐fluoroquinolones, both 7‐(piperazin‐1‐yl)‐ and 7‐(4‐methylpiperazin‐1‐yl) derivatives, 9b and 11a , are able to completely inhibit the growth of M. tuberculosis at a concentration of 6.25 μg/ml, while the 7‐[4‐(2‐oxo‐2‐phenylethyl)piperazin‐1‐yl] derivative 13 exhibits only 31% growth inhibition at the same concentration. For 1‐ethyl‐6‐fluoroquinolones, both 7‐[4‐(2‐oxopropyl)piperazin‐1‐yl]‐ and 7‐[4‐(2‐oxo‐2‐phenylethyl)piperazin‐1‐yl]‐derivatives, 2a and 2b , respectively, show complete inhibition, while their 2‐iminoethyl and substituted phenyl counterparts 3a and 2c are less active. In addition, the 6,8‐difluoro derivative was a more‐favorable inhibitor than its 6‐fluoro counterpart ( 2b vs. 2d ). These results deserve full attention especially because 2a, 2b, 9b , and 11a are non‐cytotoxic at a concentration of 100 μM . Furthermore, compound 9b proved to be a potent anti‐TB agent with selective index (SI)>40 and an EC₉₀ value of 5.75 μg/ml.     

掺Perylene的PVK薄膜荧光谱及发光机理

用高荧光效率的有机染料芘(perylene)掺杂聚乙烯咔唑(PVK),其荧光光谱与芘的发射光谱基本一致,而且亮度比纯芘发光提高十多倍,说明发光主要来自芘分子,并在PVK和perylene之间存在十分有效的能量传递或电荷转移过程,荧光谱强度随掺杂浓度的变化关系说明存在一个最佳的掺杂浓度比.分析PVK和perylene之间可能发生的能量转移过程,认为从PVK到perylene这种能量转移与实验不符;分析PVK和perylene薄膜的光致发光过程,认为从(PVK+)→(perylene+)和从(PVK-)→(p     

Diene complexes of early transition metals: ideas and progresses at Osaka University

Historical perspectives for the chemistry of diene complexes of early transition metals developed at Osaka University in the period after 1970s were reviewed briefly and personally. Preparative chemistry of this field commenced from the magnesium-diene 1:1 compounds and quickly extended to almost all the early transition metals. By the studies operated together with other researchers, unique features of these diene complexes, especially their bonding and structure, selective reactions, and catalysis performances are described.     

Vanishing Shear Viscosity Limit in the Magnetohydrodynamic Equations

We study an initial boundary value problem for the equations of plane magnetohydrodynamic compressible flows, and prove that as the shear viscosity goes to zero, global weak solutions converge to a solution of the original equations with zero shear viscosity. As a by-product, this paper improves the related results obtained by Frid and Shelukhin for the case when the magnetic effect is neglected. Supported by NSFC (Grant No. 10301014, 10225105) and the National Basic Research Program (Grant No. 2005CB321700) of China.     

ON THE COHOMOLOGY OF GENERALIZED RESTRICTED LIE ALGEBRAS

0.IntroductionThispaperisaimedatdevelopingthecohomologytheoryofmodularLiealgebrasandthendeterminingthefirstcohomologygroupsofCartantypeLiealgebras.AsgeneralizationoftheconceptofrestrictedLiealgebras,ageneralizedrestrictedLiealgebra(GRLiealgebra)wasintroducedin[21],whichisassociatedwithabasisandamappingofthebasisintotheLiealgebrasatisfyingthegeneralized-restrictednessconditions.Generalizedrestrictedrepresentations(GRrepresentations)werethenintroduced,whichcanbereducedtotherepresentationsofa…     

Study of the surface electromigration of In on Si(111) surfaces by the use of micro-electron-beams

The surface electromigration (SE) of ultrathin In films on Si(111)4 × 1-In surfaces has been investigated using experimental techniques based on μ-electron beams. On the basis of the finding that the SE velocity enhances as the strength of the electrostatic field (EF) fed through the substrate enhances, it is strongly suggested that the driving force of SE is an EF rather than a DC current fed through the substrate. It is found that a patch of ultrathin In film changes to an In patch of 1 × 1 periodicity during SE which is accompanied by spotty parts (named fine-polygons) at both the cathode and anode sides of the In patch. It is found that the fine-polygons are created at the cathode side and are stationary but grow in size to be eventually incorporated into the In-patch. A few In-islands are found on the cathode side of the In-patch and they show no translation but cycles of appearance, growth, decay, and disappearance during SE, by which mass-transportation is achieved. A plausible microscopic model for the SE is presented based on these findings.     

Mapping properties of wave and scattering operators for two-body Schrödinger operators

The modified wave and scattering operators are shown to be bounded between weighted L ²-spaces for two-body Schrödinger operators with long range potentials.     

Image Displaying Method of Ground-Based Millimeter Wave Radiometric Imaging System

The image displaying methods used in a millimeter wave radiometric imaging system have great influence on its imaging quality. In order to obtain high quality millimeter wave radiometric images, intensive studies on the image displaying methods are needed. This paper describes the image displaying method of Ground-based 8mm Millimeter Wave Radiometric Imaging (GMWRI) system and compares two different image displaying methods. The experimental results prove the unequal size element arc displaying method fits GMWRI system better.