具有原子分辨率的x射线荧光全息术的数值模拟研究

根据x射线荧光全息术的成像原理，对体心立方晶系的Fe单晶进行了数值模拟（包括荧光全 息图及其重构像），在各个晶面（001，010，100）上得到Fe原子的像，与Fe的晶格模型的 原子位置一致，表明运用这种x射线荧光全息术，能够在原子水平上得到单晶或准晶体的内 部结构图像. 关键词： x射线荧光全息术 同步辐射 晶体结构 傅里叶变换     

物理学与人文精神

人文精神的定义虽然目前尚未统一,但学术界和公众对其基本内涵已有共识.像科学精神是人类以物为对象,在追问自然界合理性的理性探索中提升出的一种价值观念体系一样,人文精神是人类以人为对象,在追问人存在的合理性的理性探索中提升出的一种价值观念体系.     

密集波分复用薄膜滤光片的群延迟补偿设计

设计了一种基于薄膜干涉理论的反射式相位补偿器件，用以补偿密集型波分复用窄带滤光片所产生的群延迟，使50GHz薄膜滤光片的群延迟特性适应于40Gb／s系统的要求，在0．2nm带宽下群延迟波动从10ps左右下降到0．76ps以下。     

基于Karhunen-Loève变换和小波谱特征矢量量化的三维谱像数据压缩

提出了基于Karhunen Lo埁ｖｅ变换的小波谱特征矢量量化三维谱像数据压缩方法耍幔颍瑁酰睿澹?Lo埁ｖｅ变换 /小波变换 /小波谱特征矢量量化方法应用了Karhunen Lo埁ｖｅ变换的消除谱相关性优良性能 ,应用二维小波变换消除空间相关性 ,在小波变换域内应用二维集分割嵌入块编码和一维谱特征矢量量化对三维谱像数据压缩 ,获得较高的压缩性能。实验结果表明 :Karhunen Lo埁ｖｅ变换 /小波变换 /小波谱特征矢量量化编码比Karhunen Lo埁ｖｅ变换 /小波变换 /改进对块零树编码和Karhunen Lo埁ｖｅ变换 /小波变换 /快速矢量量化编码方法在同样压缩比条件下 ,峰值信噪比提高 2dB和 1dB以上 ,而速度提高了 1.5和 8倍 ,整体压缩性能有较大的提高     

A non-fused fiber coupler for side-pumping of double-clad fiber lasers

A non-fused fiber coupler is demonstrated for side-pumping of the double-clad fiber (DCF) lasers by adhesive techniques. The fiber coupler is fabricated by adhering an angularly polished single-clad fiber (SCF) to the inner cladding of the DCF. The pumping light is launched from the SCF by total inner reflection. Coupling coefficient as a function of coupling angle, bend distance, and backward scattering is investigated. The field distribution in DCF is also discussed.     

Preparation of highly ordered mesoporous AlSBA-15-SO3H hybrid material for the catalytic synthesis of chalcone under solvent-free condition

Single-step preparation of SBA-15 materials functionalized with both propylsulfonic acid groups and aluminum species (AlSBA-15-SO₃H) was carried out by hydrothermal treatment of a mixture of aluminum isopropoxide, 3-mercaptopropyltriethoxysilane, tetraethoxysilane, and triblock copolymer surfactant. At Si/Al molar ratio of 11-96, the materials exhibited well-ordered hexagonally arranged mesopores with pore diameter of ca. 9 nm, BET surface area of 546.9-666.0 m² g⁻¹, and pore volume of 0.82-1.03 cm³ g⁻¹. As-prepared AlSBA-15-SO₃H was successfully used in the Claisen-Schmidt condensation reaction of benzaldehyde with acetophenone to produce chalcone under solvent-free condition, and the influence of the reaction parameters including temperatures, molar ratios of BZD to APN, and aluminum loadings were considered during the chalcone synthesis procedure. It showed that AlSBA-15-SO₃H exhibited significantly high catalytic activity and selectivity, outperforming the reference catalysts such as sulfuric acid, ZSM-5, and acidic MCM-49. In addition, the catalytic stability and regeneration of AlSBA-15-SO₃H was studied.     

The epoxy-siloxane/Al composite coatings with low infrared emissivity for high temperature applications

Low infrared emissivity coatings with good thermal resistance were prepared by using epoxy-siloxane and aluminum as adhesive and pigment, respectively. The influence of chemical composition, surface texture, roughness and thickness on the infrared emissivity was systematically investigated. The detailed results of experimental investigation indicate that the cured composite coatings could possess low emissivity value. Due to reducing infrared absorption and forming uniform and compact char construction, the infrared emissivity decreases obviously. Both the surface roughness and thickness have a critical value, respectively. Too large roughness or thickness would not contribute to the decrease of the emissivity. Moreover, the composite coatings were tested for thermal stability in air to explore the effect of high-temperature environment on the emissivity. The results indicate that the composite coatings, still possessing low emissivity after the test, exhibit favorable thermal ageing and thermal shock resistance.     

Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased (p < 0.01). In conclusion, PIIID can successfully introduce Zn onto a Ti surface, forming a modified surface layer bearing Zn ions that consequently deter adhesion of S. mutans, a common bacterium in the oral environment.     

High-conductive nanocrystalline silicon with phosphorous and boron doping

Intrinsic, P- and B-doped hydrogenated amorphous silicon thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at the temperature of 800 °C to obtain the doped nanocrystalline silicon (nc-Si) films. The microstructures, optical and electronic properties have been evaluated for the undoped and doped nanocrystalline films. X-ray photoelectron spectroscopy (XPS) measurements demonstrated the presence of the substitutional boron and phosphorous in the doped films. It was found that thermal annealing can efficiently activate the dopants in films accompanying with formation of nc-Si grains. Based on the temperature-dependent conductivity measurements, it was shown that the activation of dopant by annealing increased the room temperature dark conductivity from 3.4 × 10⁻⁴ S cm⁻¹ to 5.3 S cm⁻¹ for the P-doped films and from 1.28 × 10⁻³ S cm⁻¹ to 130 S cm⁻¹ for the B-doped films. Meanwhile, the corresponding value of conductivity activation energies was decreased from 0.29 eV to 0.03 eV for the P-doped films and from 0.3 eV to 5.6 × 10⁻⁵ eV for the B-doped films, which indicated the doped nc-Si films with high conductivity can be achieved with the present approach.     

Improved Estimation and Uncertainty Quantification Using Monte Carlo-Based Optimization Algorithms

In this article, we present a novel method to obtain both improved estimates and reliable stopping rules for stochastic optimization algorithms such as the Monte Carlo EM (MCEM) algorithm. By characterizing a stationary point, θ*, of the algorithm as the solution to a fixed point equation, we provide a parameter estimation procedure by solving for the fixed point of the update mapping. We investigate various ways to model the update mapping, including the use of a local linear (regression) smoother. This simple approach allows increased stability in estimating the value of θ* as well as providing a natural quantification of the estimation uncertainty. These uncertainty measures can then also be used to construct convergence criteria that reflect the inherent randomness in the algorithm. We establish convergence properties of our modified estimator. In contrast to existing literature, our convergence results do not require the Monte Carlo sample size to go to infinity. Simulation studies are provided to illustrate the improved stability and reliability of our estimator.