一种新型THz显微探测技术

由于太赫兹(THz)电磁辐射的波长较长，探测的空间分辨率受到衍射极限的限制.设计了一种 新型的THz显微探测技术，使探测晶体紧贴在薄产生晶体上，激发光采用紧聚焦的方式不但 把空间分辨率提高到光学量级，还克服了典型近场探测方法中存在的低通光量、高通滤波的 缺点.详细介绍了这一新型探测器件的基本结构和显著的探测特性. 关键词： THz 近场 聚焦     

Femtosecond spectroscopy of optical excitations in single-walled carbon nanotubes: evidence for exciton-exciton annihilation

Frequency-resolved femtosecond transient absorption spectra and kinetics measured by optical excitation of the second and first electronic transitions of the (8,3) single-walled carbon nanotube species reveal a unique mutual response between these transitions. Based on the analysis of the spectra, kinetics, and their distinct amplitude dependence on the pump intensity observed at these transitions, we conclude that these observations originate from both the excitonic origin of the spectrum and nonlinear exciton annihilation.     

Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

Effects of a carbon convection field on large diamond growth under high-pressure high-temperature conditions

Large diamond crystals were successfully synthesized by a FeNi-C system using the temperature gradient method under high-pressure high-temperature conditions. The assembly of the growth cell was improved and the growth process of diamond was investigated. Effects of the symmetry of the carbon convection field around the growing diamond crystal were investigated systematically by adjusting the position of the seed crystal in the melted catalyst/solvent. The results indicate that the morphologies and metal inclusion distributions of the synthetic diamond crystals vary obviously in both symmetric and non-symmetric carbon convection fields with temperature. Moreover, the finite element method was applied to analyze the carbon convection mode of the melted catalyst/solvent around the diamond crystal. This work is helpful for understanding the growth mechanism of diamond.     

酮缺陷对中性和带电六卟啉芳香性影响的直接可视化研究

利用含时密度泛函理论研究了酮缺陷对中性和带电六卟啉芳香性的影响,并使用多维可视化技术给出了该体系基态电荷分布和电子跃迁的直观图像. 研究结果表明,芳香性是决定这类体系基态密立根电荷分布的主要因素;酮缺陷效应使得体系基态的密立根电荷分布更多地局域在六卟啉基团上,在这类体系的五氟苯基取代基上密立根电荷布居较少,同时使得体系的芳香性发生改变. 进一步,通过计算体系的跃迁密度和电荷差分密度,可视化了酮缺陷对中性和带电六卟啉芳香性的影响. 结果表明,酮缺陷加强了体系电荷转移的能力.     

The characteristic junction parameter of a semiconductor laser and its relation with reliability

We discuss the factors which affect the characteristic junction parameter m, which is obtained from the intercept of the / (dV/dl) vs / characteristic. The relation between m and the reliability of InGaAsP/InP BH laser devices is also discussed.     

GaAs光电阴极片原子级表面清洁方法的研究及评价

本文对GaAs光电阴极片UHV系统中原子级表面清洁方法做了研究,它们是:光加热法、直接加热法、离子轰击加退火法、热子加热法,表面清洁效果用装于UHV系统中间在线俄歇检测,表面质量用Aa/GaAuger峰高进行比较,指出两种用于第三代象增强器光电阴极的表面清洁方法:CS-离子轰击加退火法和热子背加热法。