Observation of a charmoniumlike state produced in association with a J/psi in e+e- annihilation at sqrt[s] approximately equal to 10.6 GeV

We report the first observation of a charmoniumlike state recoiling from the J/psi in the inclusive process e+e- -->J/psi+anything at a mass of (3.943+/-0.006+/-0.006) GeV/c{2}. We also observe the decay of this state into D*D[over ] and determine its intrinsic width to be less than 52 MeV/c{2} at the 90% C.L. These results are obtained from a 357 fb{-1} data sample collected with the Belle detector near the Upsilon(4S) resonance, at the KEKB asymmetric-energy e+e- collider.     

Novel Method for the Fabrication of a Charge‐Transfer Complex Crystal by Photoirradiation

A novel method for the fabrication of a charge‐transfer complex crystal was developed. Photoirradiation of a solution of TPP[Co(tbp)(CN)₂] and TPP[Co(Pc)(CN)₂] (tbp=tetrabenzoporphyrin, Pc=phthalocyanine, TPP=tetraphenylphosphonium) gave a molecular conducting crystal of a charge‐transfer complex TPP[Co(tbp)(CN)₂]₂, which was produced by the process in which the photoexcited electron in tbp was transferred from the LUMO of tbp to that of Pc.     

Photochemical Behavior of Single‐Walled Carbon Nanotubes in the Presence of Propylamine

This report describes the photochemical behavior of single‐walled carbon nanotubes (SWNTs) in the presence of propylamine. The SWNTs are characterized by absorption and Raman spectroscopy. The spectral changes due to photoirradiation indicate that reactions occur predominantly with the metallic SWNTs and small‐diameter SWNTs. The detection of amine radicalcation species by ESR spectroscopy reveals photoinduced electron transfer from the amine to the excited SWNTs. After exposure of the photoirradiated SWNTs to air, the characteristic spectra were recovered, except for that of the small‐diameter SWNTs. The results suggest that, after photoreduction of the SWNTs, subsequent selective sidewall functionalization of the small‐diameter SWNTs occurs.     

Rare-earth doped III-nitride semiconductors for semiconductor spintronics

InGaGdN layers and InGaGdN/GaN superlattice (SL) structures were grown by plasma-assisted molecular beam epitaxy. InGaGdN layers exhibited photoluminescence emission at room temperature and its peak wavelength was red-shifted with the increase of In composition. Clear hysteresis and saturation were observed in the magnetization versus magnetic field curves at room temperature for the InGaGdN layers. Si co-doping into InGaGdN layers increased the electron carrier concentration and enhanced the magnetization. In the InGaGdN/GaN SL samples, enhanced magnetization was also observed. Si doping into wide bandgap GaN layers in these SL structures further increased the magnetization, where InGaGdN layers were not doped with Si. All these results can be understood with the carrier-mediated ferromagnetism.     

New phases of sp2-bonded boron nitride: the 12R and 24R polytypes

sp2-Bonded polytypes of graphite-like boron nitride are evidenced in the approximately twin-related bicrystal-like BN nanofibres synthesized by a high-temperature substitution reaction between carbon nanofibres and boron oxides in N2 atmosphere; the material shows a main 12R phase of A'ABC/C'CAB/B'BCA packing and a minor 24R phase with an A'ABC/BB'C'A'/C'CAB/ ... packing sequence.     

An efficient method for synthesis of succinate-based MMP inhibitors

A differentially protected fumarate undergoes radical addition followed by allylstannane trapping to provide disubstituted succinates in good yields and high anti diastereoselectivity. The conversion of the succinate to a known MMP inhibitor has been accomplished. [reaction: see text]     

High resolution atomic force microscopic imaging of the Si(111)-(7 x 7) surface: contribution of short-range force to the images

Observation of the rest-atom layer of the Si(111)-(7 x 7) surface is performed by atomic force microscopy. By detecting the force due to the single chemical covalent bond formed between the tip and the sample surface, individual atoms on the layer were clearly resolved. Unprecedented high spatial resolution was achieved by setting the detection force at a small value and by reducing background forces due to the long-range interactions with the small oscillation amplitude of the cantilever and sharp probe tip.     

Extremely low vertical-emittance beam in the accelerator test facility at KEK

Electron beams with the lowest, normalized transverse emittance recorded so far were produced and confirmed in single-bunch-mode operation of the Accelerator Test Facility at KEK. We established a tuning method of the damping ring which achieves a small vertical dispersion and small x-y orbit coupling. The vertical emittance was less than 1% of the horizontal emittance. At the zero-intensity limit, the vertical normalized emittance was less than 2.8 x 10(-8) rad m at beam energy 1.3 GeV. At high intensity, strong effects of intrabeam scattering were observed, which had been expected in view of the extremely high particle density due to the small transverse emittance.