The Thermolysis of [Ru3(CO)12] in Cyclohexene: Synthesis and Charaterisation of the New Clusters [Ru3H2(CO)9(μ3-η1:η2:η1-C6H8)] and [Ru5(CO)12(μ4-η2-C6H8)(η4-C6H8)]

Thermolysis of [Ru₃(CO)₁₂] in cyclohexene for 24 h affords the complexes [Ru(CO)₃(η⁴-C₆H₈)] (1), [Ru₃H₂(CO)₉(μ₂-η¹:η²:η¹-C₆H₈)] (2), [Ru₄(CO)₁₂(μ₄-C₆H₈)] (3) [Ru₄(CO)₉(μ₄-C₆H₈)(η⁶-C₆H₆)] (4a and 4b, two isomers) and [Ru₅(CO)₁₂(μ₄-η²-C₆H₈)(η⁴-C₆H₈)] (5), where 1, 3, 4a and 4b have been previously characterised as products of the thermolysis of [Ru₃(CO)₁₂] with cyclohexa-1,3-diene. The molecular structures of the new clusters 2 and 5 were determined by single-crystal X-ray crystallography, showing that two conformational polymorphs of 5 exist in the solid state, differing in the orientation of the cyclohexa-1,3-diene ligand on a ruthenium vertex.     

Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD)

Epitaxial, graphitic carbon thin films were directly grown on C-face/(0 0 0 1¯) SiC and (0 0 0 1) sapphire by chemical vapor deposition (CVD), using propane as a carbon source and without any catalytic metal on the substrate surface. Raman spectroscopy shows the signature of multilayer graphene/graphite growth on both the SiC and sapphire. Raman 2D-peaks have Lorentzian lineshapes with FWHM of ∼60 cm⁻¹ and the ratio of the D-peak to G-peak intensity (I_D/I_G) linearly decreases (down to 0.06) as growth temperature is increased. The epitaxial relationship between film and substrates were determined by X-ray diffraction. On both substrates, graphitic layers are oriented parallel to the substrate, but exhibit significant rotational disorder about the surface normal, and predominantly rhombohedral stacking. Film thicknesses were determined to be a function of growth time, growth temperature, and propane flow rate.