利用海洋环境噪声估计浅海海底表层声速

为提高反演效率,提出一种快速估计浅海海底表层声速的方法。根据噪声能流理论,垂直阵接收的海洋环境噪声数据能够用于无源提取海底反射损失,反射损失曲线中具有明显的临界角效应,从而接估计海底表层声速。以射线模型为基础,推导了噪声提取的反射损失与理论值之间的差异,并讨论实际阵列波束形成在不同角度和频率下的性能。考虑到非等声速环境下声线会发生弯曲,需对角度进行修正以提高方法的广泛适用性。不同频率的临界角与有效深度之间存在对应关系,黄海某海区数据处理结果表明,在临界角不变的有效深度内,海底表层可以视为等声速层,该海区海底表层0.5 m内声速估计结果为1547 m/s,与有源反演结果相近。     

平面波超声成像中的波束合成方法研究进展

平面波成像通过单次全孔径发射-接收即可获取整幅图像,将成像帧频显著地提升至1000帧/秒以上.然而,平面波成像过程中发射的非聚焦波束将导致回波信号信噪比降低,进而使图像的分辨率和对比度变差.通过多角度相干复合成像技术可以改善平面波成像的图像质量,但是会以牺牲帧频为代价.因此研究人员们开始将新型波束合成技术引入平面波成像...     

含损伤黏弹性阻尼加筋层合板声功率和指向性变异

该文旨在研究损伤位置和程度对自由阻尼加筋层合板声辐射功率和指向性的影响.基于Mindlin和Timoshenko梁理论,建立了自由阻尼层合板-梁组合结构有限元模型.数值求解四边简支边界条件自由阻尼加筋层合板振动响应,继而通过Rayleigh积分计算加筋层合板辐射声功率和指向性.将计算得到的前4阶模态固有频率、声辐射功率...     

Approximate dynamic programming algorithms for optimal dosage decisions in controlled ovarian hyperstimulation

In the controlled ovarian hyperstimulation (COH) treatment, clinicians monitor the patients’ physiological responses to gonadotropin administration to tradeoff between pregnancy probability and ovarian hyperstimulation syndrome (OHSS). We formulate the dosage control problem in the COH treatment as a stochastic dynamic program and design approximate dynamic programming (ADP) algorithms to overcome the well-known curses of dimensionality in Markov decision processes (MDP). Our numerical experiments indicate that the piecewise linear (PWL) approximation ADP algorithms can obtain policies that are very close to the one obtained by the MDP benchmark with significantly less solution time.     

The Crank‐Nicolson/Adams‐Bashforth scheme for the time‐dependent Navier‐Stokes equations with nonsmooth initial data

In this article, we study the stability and convergence of the Crank‐Nicolson/Adams‐Bashforth scheme for the two‐dimensional nonstationary Navier‐Stokes equations with a nonsmooth initial data. A finite element method is applied for the spatial approximation of the velocity and pressure. The time discretization is based on the implicit Crank‐Nicolson scheme for the linear terms and the explicit Adams‐Bashforth scheme for the nonlinear term. Moreover, we prove that the scheme is almost unconditionally stable for a nonsmooth initial data u₀ with div u₀ = 0, i.e., the time step τ satisfies: τ ≤ C₀ if u₀ ∈ H¹ ∩ L^∞; τ |log h| ≤ C₀ if u₀ ∈ H¹ for the mesh size h and some positive constant C₀. Finally, we obtain some error estimates for the discrete velocity and pressure under the above stability condition. © 2010 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq, 28: 155‐187, 2012     

Effect of mechanical force on domain switching in BiFeO_3 ultrathin films

Ferroelectric polarization can be switched by an external applied electric field and may also be reversed by a mechanical force via flexoelectricity from the strain gradient.In this study,we report the mechanical writing of an epitaxial BiFeO3(BFO)thin film and the combined action of an applied mechanical force and electric field on domain switching,where the mechanical force and electric field are applied using the tip of atomic force microscopy.When the applied force exceeds the threshold value,the upward polarization of the BFO thin film can be reversed by pure mechanical force via flexoelectricity;when an electric field is simultaneously applied,the mechanical force can reduce the coercive electric field because both the piezoelectricity from the homogeneous strain and the flexoelectricity from strain gradient contribute to the internal electric field in the film.The mechanically switched domains exhibit a slightly lower surface potential when compared with that exhibited by the electrically switched domains due to no charge injection in the mechanical method.Furthermore,both the mechanically and electrically switched domains exhibit a tunneling electroresistance in the BFO ferroelectric tunnel junction.     

Effect of defects on the electronic structure of a PbI2/MoS2 van der Waals heterostructure: A first-principles study

PbI2/MoS2,as a typical van der Waals(vdW)heterostructure,has attracted intensive attention owing to its remarkable electronic and optoelectronic properties.In this work,the effect of defects on the electronic structures of a PbI2/MoS2 heterointerface has been systematically investigated.The manner in which the defects modulate the band structure of PbI2/MoS2,including the band gap,band edge,band alignment,and defect energy-level density within the band gap is discussed herein.It is shown that sulfur defects tune the band gaps,iodine defects shift the positions of the band edge and Fermi level,and lead defects realize the conversions between the straddling-gap band alignment and valence-band-aligned gap,thus enhancing the light-absorption ability of the material.     

激光惯性约束聚变靶制备技术研究进展

在实验室实现聚变反应释放的能量大于点燃聚变反应所需能量的阈值是当今世界ICF研究的主要目标,实现这一目标仍需要深入研究一系列的关键物理问题。在ICF研究中,制靶能力的发展与提升至关重要,靶的质量是实验成功的核心要素之一。本文介绍了国际ICF靶制备工作近年来在新型烧蚀层材料靶丸、新型靶丸支撑技术、优化黑腔材料与构型以及减小燃料填充管直径等方面取得的一系列进展,并结合ICF物理需求,简要阐述了ICF靶的发展趋势。     

1.3 GHz超导腔磁通排出效应研究

设计并搭建了一套高精度的磁场测量和补偿系统,并结合中国科学院高能物理研究所（IHEP）的2K超导腔垂直测试平台对1.3 GHz 单加速间隙超导腔的磁通排出效应开展了实验研究：利用研制的磁场测量和补偿系统能够精密地测量超导腔赤道位置磁场,并能够将磁场补偿至小于5.0×10⁻⁸ T;并对超导腔不同表面温度梯度下的磁通排出效应进行了测量分析;对钉扎了磁场的超导腔进行了射频性能测试,研究了超导腔电阻对磁通钉扎的敏感度,以及在不同电场梯度下超导腔的表面电阻变化情况。结果表明,研制的高精度磁场测量和补偿系统能够满足超导腔磁通排出研究的需求;高的超导腔表面温度梯度有利于磁通的排出;磁通钉扎电阻的敏感度随着加速电场梯度的增加而增大,导致超导腔的性能下降。此实验研究也为后续超导腔的研制奠定了一定基础。     

Analysis of secondary electron emission using the fractal method

Based on the rough surface topography with fractal parameters and the Monte–Carlo simulation method for secondary electron emission properties, we analyze the secondary electron yield(SEY) of a metal with rough surface topography. The results show that when the characteristic length scale of the surface, G, is larger than 1 × 10^-7, the surface roughness increases with the increasing fractal dimension D. When the surface roughness becomes larger, it is difficult for entered electrons to escape surface. As a result, more electrons are collected and then SEY decreases. When G is less than 1 × 10^-7,the effect of the surface topography can be ignored, and the SEY almost has no change as the dimension D increases. Then,the multipactor thresholds of a C-band rectangular impedance transfer and an ultrahigh-frequency-band coaxial impedance transfer are predicted by the relationship between the SEY and the fractal parameters. It is verified that for practical microwave devices, the larger the parameter G is, the higher the multipactor threshold is. Also, the larger the value of D,the higher the multipactor threshold.