Highly substituted poly(2,3‐diphenyl‐1,4‐phenylenevinylene) derivatives having bulky phenyl and fluorenyl pendant groups: Synthesis,characterization, and electro‐optical properties

Two series of poly(2,3‐diphenyl‐1,4‐phenylenevinylene) (DP‐PPV) derivatives containing multiple bulky substituents were synthesized. In the first series, two different groups were incorporated on C‐5,6 positions of the phenylene moiety to increase steric hindrance and to obtain blue‐shifted emissions. In the second series, bulky fluorenyl groups with two hexyl chains on the C‐9 position were introduced on two phenyl pendants to increase the solubility as well as steric hindrance to prevent close packing of the main chain. Polymers with high molecular weights and fine‐tuned electro‐optical properties were obtained by controlling the feed ratio of different monomers during polymerization. The maximum photoluminescent emissions of the thin films are located between 384 and 541 nm. Cyclic voltammetric analysis reveals that the band gaps of these light‐emitting materials are in the range from 2.4 to 3.3 eV. A double‐layer EL device with the configuration of ITO/PEDOT/P4/Ca/Al emitted pure green light with CIE′1931 at (0.24, 0.5). Using copolymer P6 as the emissive layer, the maximum luminescence and current efficiency were both improved when compared with the homopolymer P4. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 6738–6749, 2006     

Novel photoswitching dithienylethenes with ferrocene units

Two novel dithienylethenes with ferrocene units were synthesized by Wittig reaction. The structure of 2a has been established by X‐ray diffraction studies. They could reversibly interconvert between two thermally stable forms, an open and a closed one, using light of different wavelengths as triggers. Copyright © 2006 John Wiley & Sons, Ltd.     

关于Tchebycheff—Fourier级数的（H,λ）平均的逼近

我们定义了（Ｈ，λ）求和法，它含有（Ｎ，ｐｎ），（Ｒ＾ｒｎ）和（Ｖｍｎ）求和法。讨论了函数ｆ（ｘ）∈Ｃ＾ｒ［－１，１］（ｒ∈Ｎ０）以及ｆ（ｘ）∈Ｗ＾ｒＨ＾ａ（ｒ∈Ｎ０，０＜ａ＜１）的切比晓夫－富里埃级数的逼近阶。     

MnBiDy(Sm)永磁膜的结构和磁性

报道了采用真空蒸镀的方法制备的MnBiDy(Sm)永磁膜的结构和磁性.Mn:Bi:Dy(Sm)的投料比为2:1:0.10.薄膜经过退出处理(350—425℃,保温4h)后,具有NiAs型hcp结构,C轴垂直膜面,剩余磁感应强度B=3.4-6.5kG,内禀矫顽力_MH_c≈3-8kOe,最大磁能积(BH)_(max)=13.39MG·Oe.实验发现,薄膜厚度对MnBiDy(Sm)永磁膜的结构和磁性具有很大的影响. 关键词：     

Molecular emission cavity analysis: Part 21. Effect of Phosphoric Acid on the Determination of Sulphate

Phosphoric acid at levels above 10^-3 M depresses the S₂ emission from sulphate, but concentrations up to 0.1 M may be necessary to eliminate cationic interferences.