Semicontinuity of multiple integrals onW k,p (Ω, ℜ m )(k≥1)

This paper shows thatW ^1,p -quasiconvexity is a necessary and sufficient condition of swlsc (sw*lsc) for multiple integrals with a Caratheodory function as the variational function, bounded by

Observation of isomeric states in197Bi

The high spin states of¹¹⁹Te, populated in¹¹⁰Pd(¹³C,4n) and¹¹⁰Pd(¹²C,3n) reactions, have been studied through -ray spectroscopy. The level scheme has been established upto a spin of 55/2. Three-quasiparticle states, based on g² _7/2h_11/2 and g_7/2d_5/2h_11/2 configurations, have been identified. The 35/2 and 39/2 states are suggested to be the fully aligned states constituted by five valence h_11/2 ³, g_7/2, d_5/2 quasiparticles.     

Theoretical study of thermal diffusivity of superlattices in measurements using “mirage” technique

A complete theoretical treatment for the determination of thermal diffusivity of superlattices by the mirage technique has been performed. An effective medium approximation model of the thermal conductivity and thermal diffusivity of both sublayers is presented, which is different from the simple models with the thermal diffusivity or thermal conductivity in series or parallel. The numerical calculation of the transverse component of the probe beam deflection in the mirage effect shows that the results obtained from the complete thermal-wave theory and the medium approximation model, for the optically and thermally thick superlattices, are in good agreement with each other. However, the further study on the thermally thin superlattices shows that either the series or the parallel model of the thermal conductivity should be chosen according to whether the thermal impedance of the superlattice is larger or less than that of substrate, respectively.     

Luminescence centers in porous silicon

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100–150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of andX band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.     

Natural convection in vertical slots with wall temperature oscillation

Natural convection in vertical slots has been studied experimentally with oscillation of a cold wall temperature. It is found that at sufficiently large Rayleigh numbers travelling-wave instability occurs, but only in the region close to the cold wall when the hot wall is maintained at the initial temperature, and appears in both cold and hot regions when both hot and cold wall temperatures are changed simultaneously and symmetrically with the initial temperature value, although the hot wall temperature is kept constant after the change. The observed instability may be attributed to the leading-edge effect induced by the cold wall temperature oscillation, and selectively amplified by the natural convection flow.The author would like to thank Professor R. S. Tankin for his encouragement and assistance throughout this study. The financial support of the Natural Sciences and Engineering Research Council of Canada is gratefully acknowledged.