Multi-carrier transport properties in p-type ZnO thin films

By the aid of temperature- and magnetic-field-dependent Hall effect measurements, we have extracted the multi-carrier transport information in N-doped and N–In codoped p- ZnO thin films grown on Si substrates through mobility spectrum analysis. It is found that owing to the compensation between free electrons and holes, the two-dimensional hole gas from ZnO/Si interface layers becomes determinant and results in the high p-type conductivity and high hole mobility in the ZnO samples. Compared with N-doping, the N–In codoping introduces many In donors and increases acceptor incorporation, as well as enhancing the free hole mobility due to the short-range dipole-like scattering.     

Effect of Cr on the wetting in Cu/graphite system

The isotherm wetting and spreading behaviors of the molten Cu-Cr alloys with 0.5, 1.0 and 2.0 at.% Cr on porous graphite substrates were investigated at 1373 K in a flowing Ar atmosphere using a modified sessile drop method. The wettability improves with increasing Cr content in the alloy as a result of phase transition from Cr₃C₂ to more wettable and metallic-like Cr₇C₃ developed at the interface. The spreading kinetics are controlled by the interfacial reaction in the early stage and the diffusion of Cr from the drop bulk to the triple junction in the later stage together with a transition in the intermediate stage.     

Electrodeposited molybdenum-doped Co3O4 nanosheet arrays for high-performance and stable hybrid supercapacitors

Journal of Solid State Electrochemistry - Long-cycle stability and high-energy density are big challenges for developing high-performance hybrid supercapacitor (HSC) electrode materials. In this...     

Study of Fe/Mo multilayer systems by SFM and AES

Received: 13 August 1998 / Published online: 10 February 1999     

糖基亚苄基NaBH_3 CN-HCl选择性开环过程中乙酰基迁移现象的研究

用NaBH3CN HCl/Et2 O对 3 O 乙酰基 4,6 O 亚苄基 β D 吡喃半乳糖乙硫苷 (2 )进行还原开环 ,发现有乙酰基迁移至 2 位的产物生成 ;进一步的实验表明 ,室温条件下 ,NaBH3CN与 2的作用导致乙酰基的迁移     

Photothermal deflection measurement of effective gas diffusion coefficient of a porous medium

In this work, an effective gas diffusion coefficient of a porous medium was measured using photothermal deflection (PD) technique. An in-house made Loschmidt diffusion cell with a photothermal-deflection probe were employed to measure the effective gas diffusion coefficient of a gas diffusion layer (GDL) with a porosity ε ≈ 0.7. The concentration evolutions of CO₂ in O₂ with and without the GDL were measured, respectively, using a transverse normal PD technique. The concentration variations were used to deduce the gas diffusion coefficients in the presence and absence of the GDL by solving mass diffusion equations. The effective gas diffusion coefficient of the GDL was calculated from the diffusion coefficients using a model of an equivalent resistance to diffusion and found to be 4.39 × 10^-6 m²s^-1, demonstrating that PD technique can be employed to determine the effective gas diffusion coefficient of a porous medium.     

Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3＋6 film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions： Prom the junction annealed-in-air to the junction annealedin-vacuum, the magnetoresistance near 0-V bias can vary from ～-60% to N～0. A possible mechanism accounting for this phenomenon is discussed.     

Effect of heat treatment on electronic phase in underdoped La2-xSrxCuO4 single crystal

Superconducting La1.937Sr0.063CuO4 crystals grown by the travelling-solvent floating-zone technique were thermally treated under various temperatures and oxygen pressures for moderately adjusting the oxygen content. The response of intrinsic electronic property of the crystals to the change of hole density in La2-xSrxCuO4 in the vicinity of the magic doping of x= 1/16 （= 0.0625） is studied in detail by magnetic measurements under various fields up to 1 T. It is found that when the superconducting critical temperature （Tc） increases with the oxygen content, there appears also a new subtle electronic state that can be detected from the differential curves of diamagnetic susceptibility dx/dT of the crystal sample. In contrast with the intrinsic state, the new subtle electronic state is very fragile under the magnetic fields. Our results indicate that a moderate change in oxygen doping does not significantly modify the intrinsic electronic state originally existing at the magic doping level.