一种不等带宽光学梳状滤波器

提出了一种新型—Michelson—三面镜FabryPerot型50GHz不等带宽光学梳状滤波器设计方案,分析和模拟表明:该器件将一路信道间隔为50GHz的输入信号分离成信道间隔为100GHz的奇偶两路输出信号,其中在3dB处,奇数信道带宽大于30GHz用于10Gb/s传输,偶数信道带宽大于60GHz用于40Gb/s传输对于将来的40Gb/s系统,该器件具有优势.     

可见/近红外光谱分析技术快速鉴别航天育种番茄

提出了利用可见/近红外光谱技术快速无损鉴别航天育种番茄品种的方法,采用偏最小二乘法对光谱特征信息进行提取,与神经网络结合建立番茄品种的鉴别模型.该模型将提取后的主成分作为神经网络的输入,加速了神经网络的训练速度.同时采用小波变换对大量光谱数据进行压缩,并结合神经网络建立番茄品种鉴别模型,该模型将压缩后的数据作为神经网络...     

基于社团结构的负载传输优化策略研究

研究表明网络社团结构特征对负载传输有影响,明显社团结构特征会降低网络的承载能力.由于最短路由策略在选择路由时有一定的随机性,本文提出了一种基于社团结构的负载传输策略,减少最短路由经过的社团数量,从而降低社团边缘节点的介数.实验结果显示,该策略在保证最短路由小世界特性的同时,提升了网络的承载能力,社团划分得越准确传输优化策略效果越显著. 关键词： 优化路由策略 社团结构 复杂网络 负载传输     

Sr0.6Ba0.2Ca0.2Al2O4 ∶Eu,Dy的制备与长余辉发光性能研究

采用高温固相法制备了Ca,Ba共掺的Sr_0.6Ba_0.2Ca_0.2Al₂O₄ ∶Eu²⁺_0.01, Dy³⁺_0.02和单掺Ba的Sr_0.6Ba_0.4Al₂O₄ ∶Eu²⁺_0.01, 关键词： 长余辉 铝酸锶 稀土掺杂 陷阱能级     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Repetition rate multipliers for efficient implementation of multiphoton and pump-probe fluorescence microscopy

With the advances in pulsed laser systems, microscopic imaging techniques such as multiphoton and pump-probe fluorescence microscopy have developed into effective tools for investigating intensity and time-resolved phenomena inside biological systems. However, pulsed lasers used in these techniques usually are commercial systems with repetition frequencies of around 80 MHz. While these systems have proven to be adequate for multiphoton and pump-probe microscopic imaging applications, the temporal separation of the laser pulse train (around 12.5 ns) is long compared to the fluorescence lifetimes of many common fluorescence species. In this work, we present the designs of repetition rate multipliers based on passive optical components that can be used to increase the efficiency in multiphoton and pump-probe fluorescence microscopy. Depending on the lifetime of fluorescence molecules under investigation, the passive repetition rate multiplier can increase the duty cycle of multiphoton or pump-probe microscopy up to fourfold.     

Structure and reflective properties of Al-Cu-Fe quasicrystalline thin film prepared by laser induced arc method

Al-Cu-Fe thin films were prepared by laser induced arc (laser-arc) method from a single source—Al₆₃Cu₂₅Fe₁₂ alloy, which was proved to consist of quasicrystalline phase together with approximant phase. The composition of the deposited films meets the requirement for formation of icosahedral symmetry phase. Quasicrystalline phase was obtained after annealing the amorphous as-deposit film samples. The optical properties of the samples were investigated. Thin film samples of Al, Cu and Fe deposited under the same condition were employed for comparison. The results showed specific reflective properties of Al-Cu-Fe quasicrystal thin film in some wavelength range. The optical conductivity of the films exhibited a negative peak, centered about 440 nm in range of 190 to 800 nm. The Al-Cu-Fe quasicrystal thin films could absorb almost all the ray in the wavelength range from 420nm to 450 nm. The ratio of absorption was greater than 99%.     

A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption

We have demonstrated a passively Q-switched operation of Nd:GdVO₄ laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.     

脉冲激光辐照光学薄膜的缺陷损伤模型

建立了缺陷吸收升温致薄膜激光损伤模型,该模型从热传导方程出发,考虑了缺陷内部的温度分布以及向薄膜的传导过程,通过引入散射系数简化了Mie散射理论得出的吸收截面.对电子束蒸发沉积的ZrO₂:Y₂O₃单层膜进行了激光破坏实验,薄膜样品的损伤是缺陷引起的,通过辉光放电质谱法对薄膜制备材料的纯度分析发现材料中的主要杂质元素为铂,其含量为0.9％.利用缺陷损伤模型对损伤过程进行了模拟,理论模型和实验结果取得了较好的一致性.     

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

LaAlO₃ (LAO) is explored in this work to replace SiO₂ as the gate dielectric material in metal–oxide–semiconductor field effect transistor. Amorphous LAO gate dielectric films were deposited on Si (0 0 1) substrates by low pressure metalorganic chemical vapor deposition using La(dpm)₃ and Al(acac)₃ sources. The effect of processing parameters such as deposition temperature and precursor vapor flux on growth, structure, morphology, and composition of LAO films has been investigated by various analytical methods deeply. The film growth mechanism on Si is reaction limiting instead of mass transport control. The reaction is thermally activated with activation energy of 37 kJ/mol. In the initial growth stage, Al element is deficient due to higher nucleation barrier on Si. The LAO films show a smooth surface and good thermal stability and remain amorphous up to a high temperature of 850 °C. The electrical properties of amorphous LAO ultrathin films on Si have also been evaluated, indicating LAO is suitable for high k gate dielectric applications.