Gold Spherical and Flake Assemblies Fabrication Through Calcination of Gold Nanoparticles Incorporated Poly(acrylonitrile) Nanofibers

Journal of Cluster Science - This work reports on the outcome of the calcination of gold nanoparticles incorporated polyacrylonitrile nanofibers in air which results in the formation of gold...     

Combination of the Claisen-Schmidt reaction,the Michael addition,and the Hantzsch reaction in the synthesis of 2,6′-bis-aryl-3,4′-bipyridines

Russian Chemical Bulletin - Pyridine-3-carbaldehyde reacted with 1-(aryl)ethan-1-ones to give 1,5-diaryl-3-(pyridin-3-yl)pentane-1,5-diones, which were further converted to...     

Nonlinear Optical Absorption in GaSe upon Laser Excitation

Optics and Spectroscopy - The nonlinear absorption in GaSe crystals at high optical excitation levels is experimentally studied. A Nd:YAG laser (first and second harmonics, 1064 and 532 nm) and a...     

Deuteron electromagnetic form factors and tensor polarization observables in the framework of the hard-wall AdS/QCD model

We study the electromagnetic form factors and tensor polarization observables of the deuteron in the framework of the hard-wall AdS/QCD model. We find a profile function for the bulk twist \begin{document}$\tau=6$\end{document} vector field, which describes the deuteron on the boundary and fix the infrared boundary cut-off of AdS space in accordance with the ground state mass of the deuteron. We obtain the deuteron charge monopole, quadrupole, and magnetic dipole form factors and tensor polarization observables from the bulk Lagrangians for the deuteron and photon field interactions. We plot the momentum transfer dependence of the form factors and tensor polarization observables and compare our numerical results with those in the soft-wall model and experimental data.     

Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon

Results of studying the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium (9×10 ¹⁹ cm ^?3 ) and boron (4.1×10 ¹⁸ , 1.34×10 ¹⁹ , and 4.9×10 ¹⁹ cm ^?3 ) impurities are presented. It is found that, similarly to n-and p-type silicon samples with impurity concentrations up to ～10 ¹⁷ cm ^?3 , the relaxation rate ν of the magnetic moment of a _μ Al acceptor in silicon with a high impurity concentration of germanium (9×10 ¹⁹ cm ^?3 ) depends on temperature as ν～T ^q , q≈3 at T=(5–30) K. An increase in the absolute value of the relaxation rate and a weakening of its temperature dependence are observed in samples of degenerate silicon in the given temperature range. Based on the experimental data obtained, the conclusion is made that the spin-exchange scattering of free charge carriers makes a significant contribution to the magnetic moment relaxation of a shallow acceptor center in degenerate silicon at T?30 K. Estimates are obtained for the effective cross section of the spin-exchange scattering of holes (σ _h ) and electrons (σ _e ) from an Al acceptor center in Si: σ _h ～10^?13 cm² and σ _e ～8×10^?15 cm² at the acceptor (donor) impurity concentration n _a (n _d )～4×10¹⁸ cm^?3.     

Effect of external fields on the memory effect of the incommensurate phase in the ferroelectric-semiconductor TlGaSe<Subscript>2</Subscript>

The effect of external fields (dc electric field, light illumination) on the memory effect of the incommensurate phase in the ferroelectric-semiconductor TlGaSe₂ is studied using the measured dielectric constant. The results obtained are discussed. It is shown for the first time that the effect of external fields on the anomaly related to the memory effect in TlGaSe₂ can be reduced to the following universal empirical rule: when a sample is held for many hours at a constant temperature T ₀ in the temperature range of the incommensurate phase in a dc electric field, the deflection amplitude in the low-temperature part of the anomaly in the temperature dependence of the relative change in the dielectric constant Δ?/? increases (the deflection in the high-temperature part of the Δ?/? anomaly disappears) as compared to this segment in the dependence obtained during isothermal annealing of this sample at the same temperature without an electric field. The crystal remembers its thermal history at a temperature that is several kelvins higher than T ₀. Light illumination increases the deflection amplitude in the high-temperature part of the Δ?/?(T) anomaly and shifts the temperature at which the crystal remembers its thermal history toward lower temperatures with respect to T ₀.     

Discharge Characteristics of the Penning Plasma Source

The results of investigation of discharge characteristics of the Penning plasma source are presented. Volt-ampere characteristics (VAC), energy distribution, and mass-charge composition of ions emitted from the discharge under different modes of its combustion were measured. The connection between the discharge current bursts and increase in the potential drop (up to 50% of the anode voltage) is established. The measured VACs agree well with the theoretical dependencies. It is shown that the content of atomic hydrogen ions increases from 5 to 10% with an increase in the anode voltage from 1 to 3.5 kV and the power applied in the discharge (from 0.2 to 3 W).     

Rearrangement in the systems ethyl bromopyruvate-1-(cyclohex-1-enyl)piperidine, -pyrrolidine,and -morpholine as an effi cient approach to 4,5,6,7-tetrahydroindoles

Russian Chemical Bulletin - 1-(Cyclohex-1-enyl)piperidine, -pyrrolidine, and -morpholine react with ethyl bromopyruvate in refluxing dioxane to afford the corresponding 4,5,6,7-tetrahydroindole...     

A general analytical method for evaluation of the thermodynamic properties of matters using virial coefficients with Morse potential at high temperature

In this paper, we established an analytical formula for the second virial coefficient (SVC) with Morse potential without using any numerical methods, and the obtained formula is applied to the calculation of the speed of sound of some matter at high temperature. This approach is based on the series expansion formula and special functions, which allows the exact evaluations of any thermodynamic properties of matter using the SVC. As an application, the obtained analytical formula is used for evaluation of the SVC with Morse potential for high‐temperature gas and the plasma region of the intermolecular interactions of neutral atom gases of B, Si, Zn, H₂, N₂, O₂, NO, CO, He, Ne, Ar, Kr , and Xe . Based on the obtained formula of SVC, the speed of sound for gases of N₂, Ar , and Zn are also determined analytically. A specific maximum temperature is chosen for every gas to ensure that there are still neutral atoms in the gas, and low temperatures are avoided due to quantum effects. The results are compared with numerical data and another analytical data from the literature. The new analytical solution is shown to be in good agreement with the compared data and is verified to supply proper thermodynamic data.     

Features of laser-induced luminescence and photoconductivity of layered Cu<Subscript>3</Subscript>In<Subscript>5</Subscript>S<Subscript>9</Subscript> crystals

Luminescence and photoconductivity of layered Cu₃In₅S₉ crystals at high levels of optical excitation are studied experimentally. A pulsed nanosecond Nd:YAG laser with built-in second and third harmonic generators to generate 1064-, 532-, and 355-nm radiation is used as a light source. It is found that the photoluminescence spectra exhibit two emission bands due to zone–acceptor level and impurity donor–impurity acceptor transitions. It is shown that the photoconductivity in Cu₃In₅S₉ is monopolar. The waveform of the photoconductivity consists of fast and slow components associated with two channels of recombination.