Der Einflu\ der Elektrolyte auf das Glykogensol und die Entstehung und die Umkehrung der Hofmeister'schen Ionenreihen

Ohne Zusammenfassung     

Generalized Kinetic Criterion of the Liquid–Glass Transition

Physics of the Solid State - Justification and generalization of the glass transition criterion of Schmelzer is proposed with the involvement of the model of delocalized atoms. Unlike the...     

Holographic Study of Surface Relief Using a Shear Interferometer

Radiophysics and Quantum Electronics - We describe experimental studies of the recording of the relief of a diffusely reflecting surface using a shear interferometer. The interferometer uses a...     

Regions of stability of queuing systems

A method of stability analysis is considered for the solution of the inverse queuing problem, and quantitative estimates are obtained.Translated from Problemy Ustoichivosti Stokhasticheskikh Modelei — Trudy Seminara, pp. 107–115, 1980.The author expresses his gratitude to V. V. Kalashnikov for a useful discussion of this paper.     

Role of exciton-phonon interactions and disordering processes in the formation of the absorption edge in Cu<Subscript>6</Subscript>P(S<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>x</Subscript>)<Subscript>5</Subscript>Br crystals

The absorption edge in Cu₆P(S_1?x Se_x)⁵Br crystals has been studied for strong absorption in the temperature range of 77–330 K. The parameters of the Urbach absorption edge and exciton-phonon interactions in Cu₆P(S_1-x Se_x)₅Br crystals are determined and their effect on the composition disorder is studied.     

To the problem of Hall “mobility” in polycrystalline thin films with potential barriers

The peculiarities of the potential shape in polycrystalline films were considered. It was shown that the barrier height (φ_B) in sites (the place where three or more crystallites are connected) with respect to the concentration of boundary states (BS) was higher or coincided with the barrier height (φ_A) at the crystallite boundaries (CB). That is why the sites for majority charge carriers in films were “blocked down” and current transport along CB was not realized. If inversion of the conductivity type at CB was absent, the Hall potential was generated in quasi-neutral regions of crystallites and in barrier regions perpendicular to the current lines. If $\text{φ}{}_{\mathrm{A}}\text{+ E}{}_{\mathrm{F}}\text{<}\text{1}\text{2}\text{E}{}_{\mathrm{g}}$ the Hall potential coefficient (R_H) of the film is determined by the carrier concentration n₀ in quasi-neutral regions. In this case the activation energy of the Hall mobility was equal to the activation energy of the conductivity (σ_A). In the opposite case the inversion conductivity type takes place on CB. When the inversion regions are present near the barrier tops and conductivity is realized along CB, R_Hp ～ (N_cN_v/n₀)^-1 exp (E_g?φ_B/kT) and μ_Hp ～ exp (?φ_B?φ_A/kT), where E_g is the band gap, N_c, N_v are the effective density of states in the conduction and valence bands.