Numerical modeling of a XeCl laser excited by microwave discharge

12 , 169 (1987). Reasonably good agreements in the peak output power and laser efficiency have been achieved. Model calculations also predict that an efficiency as high as 2.7% can be obtained once the conditions of the above-mentioned experiments have been optimized. From the consideration that the skin depth effectively limits the absorption length of the microwave pumping and hence the excitable volume, it is concluded that high input power densities (>2 MW/cm³) and higher gas pressures (between 3 and 10 atm) are the preferable conditions to achieve higher efficiency. Preliminary calculations on CCl₄ containing XeCl gas mixtures show that improvement in laser efficiency by several folds may be achieved as a result of the higher intrinsic efficiency of excimer formation. Received: 23 September 1996 / Revised version: 25 March 1997     

Determination of the largest lyapunov index for short chaotic time sequences in self-oscillating chemical reactions

A method was developed for the determination of largest Lyapunov index for short chaotic time sequences with allowance for the presence of noise in the response of the system. For this purpose a simple unidimensional representation modelling the dynamics of irregular self-oscillations was investigated. Conditions were found for adequate determination of the largest Lyapunov index from the noise-distorted signals. The results were used to obtain the largest Lyapunov index for the Belousov—Zhabotinskii reaction taking place in an ideal-mixing closed reactor and in a constant-mixing flow-type reactor. Institute of Organic Chemistry, National Academy of Sciences of Ukraine. Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 33, No. 3, pp. 136–142, May–June, 1997.     

Mechanism of silicon epitaxy on porous silicon layers

The mechanism of silicon epitaxy on porous Si(111) layers is investigated by the Monte Carlo method. The Gilmer model of adatom diffusion extended to the case of arbitrary surface morphology is used. Vacancies and pendants of atoms are allowed in the generalized model, the activation energy of a diffusion hop depends on the state of the neighboring positions in the first and second coordination spheres, and neighbors located outside the growing elementary layer are also taken into account. It is shown that in this model epitaxy occurs by the formation of metastable nucleation centers at the edges of pores, followed by growth of the nucleation centers along the perimeter and the formation of a thin, continuous pendant layer. Three-dimensional images of surface layers at different stages of epitaxy were obtained. The dependence of the kinetics of the epitaxy process on the amount of deposited silicon is determined for different substrate porosities. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 7, 512–517 (10 April 1998)     

Asymptotic behavior of neutron small-angle multiple scattering spectra

The asymptotic behavior of the spectra for large values of the scattering vector for the case of elastic multiple small-angle neutron scattering (SANS) is investigated theoretically and experimentally. An expansion of the spectrum in terms of the reciprocal of the magnitude of the momentum transfer is obtained taking account of the influence of the instrumental line. It is shown that, to within some factor, the leading term of the expansion is identical to the differential single-scattering cross section averaged over a statistical ensemble of particles; several subsequent terms in the expansion are calculated and the range of applicability of the resulting expressions is determined. The asymptotic behavior of the multiple SANS spectrum is measured, using a two-crystal neutron spectrometer, for samples of an HTSC ceramic, the alloy Fe-Ni, and Al powder. The agreement between the experimental results and the theoretical predictions is analyzed. Zh. éksp. Teor. Fiz. 114, 2194–2203 (December 1998)     

Phase transitions in silicon single crystals resulting from directional plastic deformation

The formation of polytypic modifications is observed in dislocation-free silicon single crystals under directional plastic deformation. It is shown that the deformation-stimulated phase appears on the surface of the sample in the form of small grains ranging from several hundred to several thousand angstroms in size. A twin structure in the individual grains is observed. Fiz. Tverd. Tela (St. Petersburg) 40, 746–749 (April 1998)     

Dynamics of nanodefects on a loaded gold surface

The dynamics of defects with linear dimensions from ≈1 to ≈100 nm on a Au surface under load have been studied by means of tunnelling microscopy. It is found that the origin, growth, and resorption of the defects is caused by displacements of bands of material from 5 to 50 nm wide, parallel to the {111} slip planes. The defects can be separated into two groups: nonsteady-state defects, whose lifetime does not exceed 15 min, while the depth is ⩽20 nm, and quasi-steady-state defects, with a lifetime three orders of magnitude greater than the first. It is assumed that the nonsteady-state defects are formed when the ensemble of dislocations is being reconstructed, while the quasi-steady-state defects are formed at the instant of formation of dislocation substructures during the creep of the loaded metal. Fiz. Tverd. Tela (St. Petersburg) 40, 2180–2183 (December 1998)     

Influence of the thickness of the liquid layer on the ratio of the dimensions of a convection cell

A theory is developed for a new type of transition — a change in the ratio of the longitudinal and transverse dimensions of a convection cell as the thickness of a liquid layer is varied. A sudden change in the ratio of the cell dimensions takes place because of a change in the predominant mechanism for excitation of convection. The governing influence of buoyancy forces gives way to one of thermocapillary forces, and they in turn give way to the influence of thermoelectric forces for yet thinner layers. As the layer thickness is reduced gradually at a fixed external heating, the ratio of the dimensions will take on the values 0.7, 0.65, and 1, respectively. Zh. Tekh. Fiz. 68, 7–11 (November 1998)