Trap centers in Au-implanted MOS structures

Trap centers in the Si-SiO₂ interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 10¹²–3 × 10¹³ cm^–2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or 900° C. Three Au-related trap levels have been observed in the interface region, which were attributed to the Au-donor (E _v +0.35 eV), the Au-acceptor (E _v +0.53 eV), and the Au-Fe complex (E _v +0.45 eV). The trap concentration profiles show that the Si-SiO₂ interface affects the Au concentration in a depth range of 1 m from the interface and that gettering of Au occurs at the interface. The interface state density is independent of the Au concentration at the interface even for concentrations of 10¹⁵ cm^–3.     

Effect of NaOH and NaCl on the disodiumn-decane phosphonate micellar aggregation number

The diffusion coefficient of disodiumn-decane phosphonate micelles was studied by polarography at 25°C in NaCl and in NaOH solutions, and the size and aggregation number of the micelles was computed as a function of Na⁺ concentration. All other conditions being equal, the addition of NaCl produces micelles with an aggregation number one order of magnitude larger than the NaOH addition. This is due to the increase of the effective charge per micellized head group produced by the reaction of OH- with the hydrolized head groups which are mainly present as-PO₃H- in the micellar Stern layer.