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We study the Thirring and chiral-invariant Gross-Neveu (CGN) models using the functional integral method. By introducing an auxiliary vector field we disclose a relation with two-dimensional gauge theories coupled to fermions and then extend a technique based on a chiral change in the functional variables to study purely fermionic models.We obtain the exact Klaiber solution for the massless Thirring model (for spin ) in a very simple way and we then extend our technique to investigate the CGN model. We show the factorization of a free fermionic part at the level of Green functions on very general grounds. We then impose certain restrictions on the behavior of the fields — which render our treatment exact only in the zero winding number sector, but allow the computation of the U(1) part of the CGN Green functions exactly, showing, in particular, its complete decoupling from the color part and the almost long-range order behaviour in the infrared region.In our approach, the non-triviality of the jacobian arising from the chiral transformation — directly related to the topological density and the axial anomaly — appears to be crucial for the functional integral treatment of these models. 相似文献
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We study (1 + 1) dimensional gauge theories [with SU(N) and diagonal SU(N) color symmetry] using the functional integral method. We construct an effective lagrangian by performing a change in the fermionic variables, and then investigate relevant phenomena such as the intrinsic Higgs mechanism and color screening. 相似文献
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E. F. Da Silveira F. L. Freire Jr. C. P. Massolo F. A. Schaposnik A. Lépine 《Hyperfine Interactions》1982,12(1):7-14
The minima in the correlation time dependence of the Scherer-Blume time-integrated attenuation coefficients for the hyperfine perturbation of ions recoiling in gas are studied. Its position and depth are determined for different physical situations and comparison with experimental data is shown.Work supported by FINEP, CNPq, CONICET and CIC (Buenos Aires, Argentina). 相似文献
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Fabrication of Co/CoO Exchange Bias System by Ion Implantation and Its Magnetic Properties 下载免费PDF全文
We use ion implantation as a new approach to build an anti-ferromagnetic (AFM) cluster embedded exchange bias (EB) system. Co film with thickness of 130nm is deposited on the Si (111) substrate using magnetron sputtering, 60keV O+ is chosen to implanted into the Co film to form CoO AFM clusters coupling with Co matrix at the interface. By measuring the hysteresis loop after field-cooling, significant shifts of loop along the applied field are confirmed. When increasing the implantation dose to 2×1017/cm2 and annealed samples in N2 atmosphere, we obtain the highest HEB to 458Oe. 相似文献