Bifurcation and stability of dynamical structures at a current instability

We investigate bifurcation and stability of nonuniform current states at a voltage-controlled current instability. We consider a model which exhibits bulk negative differential conductivity due to Bragg scattering of hot electrons. The system is described by balance equations for momentum and energy densities of the carriers. These transport fields are coupled to Maxwell's equations. The uniform stationary current state is unstable against long-wavelength dielectric relaxation modes at a critical field. We find that the softening of these modes gives rise to a family of periodic travelling waves and to a solitary solution (dipole domain). We show that the periodic travelling waves are unstable, wheras the dipole domain can be stabilized by coupling the sample to a suitable external circuit, if the static impedance of the sample in the domain state is negative. The model describes therefore a discontinuous nonequilibrium transition to a large amplitude domain state.Work Supported by the Swiss National Science Foundation     

Phase transitions of continuous order: Ising model on a Cayley tree

We introduce the notion of a phase transition of continuous order. As a model which displays such a phase transition an Ising model on a Cayley tree is solved exactly and discussed in detail.     

Photoelectron spectroscopy from CO adsorbed on a Cu(111) surface

He II-ultraviolet photoelectron spectra (hv = 40.8 eV) from a carbon monoxide layer adsorbed on a Cu(111) surface exhibit two peaks at 8.5 and 11.6 eV below the Fermi level and a weaker maximum centered at about 13.5 eV. The emission from the Cu d-band is markedly suppressed after adsorption. The results are discussed in terms of the recent models for assigning the UPS peaks observed after adsorption of CO on transtion metals     

High frequency conductivity in the charge density wave semiconductor TaS3

We report the observation of frequency dependent conductivity σ (ω) in the charge density wave (CDW) semiconductor TaS₃. Based on σ (ω) and other evidences, we sugest that three different temperature regions occur in this compound: 1-D fluctuating CDW region above T_MI, a coherent CDW state below T_MI, and a CDW glass state at low temperatures.     

On a variational-perturbational method for large perturbations

Using a perturbation theoretical argument an effective variational ansatz for the ground state is given. The formula works for arbitrary coupling strengths. The anharmonic oscillator is presented as an example and a comparison with other methods is made.     

Intra-cavity spectroscopy with diode lasers

A multi-mode diode laser with an external cavity is studied experimentally and theoretically for its application to intra-cavity spectroscopy. One facet of a typical Ga_0.89Al_0.11As laser diode was antireflection-coated by deposition of HfO₂ such that 10^–3 residual reflectivity was left over. This diode was placed in an external optical cavity. The emission spectrum of this diode laser is highly sensitive to any frequency-dependent loss in the cavity, and the detectivity of such a loss grows with the pump rate. Even close to threshold, the absorption at 780 nm of Rb atoms with a density of 5×10¹⁰ cm^–3 has been detected. An adequate model for diode lasers based on rate equations and including frequency-dependent gain saturation is developed and applied to the calculations of output spectra. The sensitivity of these spectra to intra-cavity absorption is determined by the overall cavity loss — which is rather high — and the fraction of spontaneous emission in the total emission, in contrast with dye lasers where it is limited by nonlinear mode coupling. Various criteria for the sensitivity are suggested. The smallest detectable absorption with a perfectly antireflection-coated laser is 10^–6 cm^–1. Improvement of the characteristics of the laser diode would increase the sensitivity.     

Search for giant Franz-Keldysh-like effects in GaSe and other layered semiconductors

Recently, an anomalously large redshift of the absorption edge with electric field was claimed for -GaSe_1–x S _x layered crystals. We have studied Bridgman grown -GaSe crystals as well as vapor transport grown -GaS, and 2H-WSe₂. While we have observed a shift in the absorption edge for -GaSe similar to that reported in previous work, our results demonstrate that the redshift arises from Joule heating, and is thus temperature induced, rather than intrinsic. For -GaS, much larger resistivities virtually eliminate Joule heating, and our measurements of the electric field induced absorption edge shift yield an estimated upper limit of approximately 0.04 meV · cm/kV for a field of 2.4×10³ kV/cm, in good agreement with the theoretical value expected for the Franz-Keldysh effect.Also at University of Konstanz