Eine Bemerkung über die Konstanten der van der Waals'schen Gleichung

Ohne Zusammenfassung     

über eine Theorie der Veränderlichkeit der Oberflächenspannung mit der Dicke und dem Querschnitt der Glasplatten,gemessen mit dem Searle'schen Tensiometer

Ohne Zusammenfassung übersetzt von H. Erbring (Leipzig).     

Synthesis and polymerization of p-(p′-vinylbenzoyl)-peroxybenzoic acid tert-butylester: A monomer containing a photodissociable radical source

In a previous report we have shown that efficiently photodecomposable, but thermally stable, peresters can be made from a compound that contains both a triplet photosensitizer functionality and a perester group. This fundamental approach has been extended to make a novel vinyl monomer containing a triplet sensitizer and a perester group. Thus, the monomer p-vinylbenzoyl-p-tert-butyl perbenzoate (VBPE) has been synthesized and polymerized by normal procedures without loss of perester activity. The resulting polymer perester can be used as an efficient photolabile radical source by irradiating at the λ_max of the benzophenone carbonyl moiety. The homopolymer (PVBPE) and copolymers with other monomers, such as styrene, could be photocrosslinked with high efficiency. Copolymers of VBPE and styrene containing low percentages of VBPE have been used to initiate graft chains of poly(methyl methacrylate) by irradiating a solution of the copolymer in methyl methacrylate at 366 nm.     

Differential, partial and total electron impact ionization cross sections for SF(6)

Single and double differential ionization cross sections for the production of ions resulting from dissociative, single and double ionization of SF(6) by electron impact have been calculated using a semiempirical formulation based on the Jain-Khare approach. In addition, triple differential cross sections have been obtained for some of the doubly charged fragment ions at an incident electron energy of 100, 150, and 200 eV, respectively, and a fixed scattering angle of 30 degrees. As no previous data seem to exist for differential cross sections we have derived from these differential cross sections corresponding partial and total ionization cross sections from threshold up to 900 eV and compared those with the available theoretical and experimental data.     

Magnetic field-assisted liquid crystal alignment on a solid substrate: drift of easy orientation axis, anchoring energy and angular distribution of adsorbed liquid crystal molecules

The anchoring properties of a film of anisotropically adsorbed liquid crystal (LC) molecules on a rigid substrate have been studied. The LC film was prepared by cooling it from the isotropic phase in the presence of a magnetic field parallel to the surface of the substrate. Relationship between the anchoring energy, easy axis direction and angular distribution of the adsorbed molecules, and changes in their angular distribution due to adsorption-desorption, were studied. The dependence of the anchoring energy on the duration and the temperature at which the LC film is annealed allowed an estimation of the activation energy of desorption of LC molecules on ITO surface, ΔE≈0.55 eV. The results suggest that hydrogen bonds are responsible for the adsorption of LC molecules on the substrate.     

X-ray diffraction from the uniaxial and biaxial nematic phases of bent-core mesogens

X-ray diffraction patterns for the uniaxial and biaxial nematic phases exhibited by rigid bent-core mesogens were calculated using a simple model for the molecular form factor and a modified Lorentzian structure factor. The X-ray diffraction patterns depend strongly on the extent of the alignment of the molecular axes as well as the orientation of molecular planes. The X-ray diffraction can be unequivocally used to identify the biaxial nematic phase, study the uniaxial-biaxial phase transition, and estimate the order parameters of the nematic phase.     

Fractional composition of large crystallite grains: A unique microstructural parameter to explain conduction behavior in single phase undoped microcrystalline silicon

We have studied the dark conductivity of a broad microstructural range of plasma deposited single phase undoped microcrystalline silicon (μc-Si:H) films in a wide temperature range (15–450 K) to identify the possible transport mechanisms and the interrelationship between film microstructure and electrical transport behavior. Different conduction behaviors seen in films with different microstructures are explained in the context of underlying transport mechanisms and microstructural features, for above and below room temperature measurements. Our microstructural studies have shown that different ranges of the percentage volume fraction of the constituent large crystallite grains (F_cl) of the μc-Si:H films correspond to characteristically different and specific microstructures, irrespective of deposition conditions and thicknesses. Our electrical transport studies demonstrate that each type of μc-Si:H material having a different range of F_cl shows different electrical transport behaviors.     

Stability estimates for h-p spectral element methods for general elliptic problems on curvilinear domains

In this paper we show that the h-p spectral element method developed in [3,8,9] applies to elliptic problems in curvilinear polygons with mixed Neumann and Dirichlet boundary conditions provided that the Babuska-Brezzi inf-sup conditions are satisfied. We establish basic stability estimates for a non-conforming h-p spectral element method which allows for simultaneous mesh refinement and variable polynomial degree. The spectral element functions are non-conforming if the boundary conditions are Dirichlet. For problems with mixed boundary conditions they are continuous only at the vertices of the elements. We obtain a stability estimate when the spectral element functions vanish at the vertices of the elements, which is needed for parallelizing the numerical scheme. Finally, we indicate how the mesh refinement strategy and choice of polynomial degree depends on the regularity of the coefficients of the differential operator, smoothness of the sides of the polygon and the regularity of the data to obtain the maximum accuracy achievable. An erratum to this article is available at .