Distribution of hydrogen in low temperature passivated amorphous silicon (a-Si:H) films from neutron reflectivity

Hydrogen plays a critical role in the passivation of dangling bonds in hydrogenated amorphous silicon (a-Si:H) to enable acceptable semiconducting characteristics during operation in devices. Low temperature processing enables fabrication of high performance transistors on flexible substrates such as plastic or stainless steel foils, but also leads to a decrease in the stability of the electronic performance. Generation of defects at the a-Si:H/insulator (hydrogenated silicon nitride, SiN:H) during electrical use due to localized heating will lead to decreased performance unless the dangling bonds are passivated in-situ by residual hydrogen. For this reason, the distribution of hydrogen within a-Si:H may be critical to understanding their aging phenomena. Here the distribution of hydrogen within both a-Si:H and SiN:H layers is probed with sub-nanometer resolution using neutron reflectivity. The hydrogen concentration within the bulk of the a-Si:H (11 ± 2 at.%) and SiN:H (18 ± 3 at.%) agree well with previous reports, but the increased resolution of the neutron measurement is able to identify an approximate three fold increase in the concentration within 2 nm of the semiconductor-insulator interface. This enhanced hydrogen content may act in the short-term as a sink to passivate any dangling bonds formed during operation.     

Working group report: Heavy-ion physics and quark-gluon plasma

This is the report of Heavy Ion Physics and Quark-Gluon Plasma at WHEPP-09 which was part of Working Group-4. Discussion and work on some aspects of quark-gluon plasma believed to have created in heavy-ion collisions and in early Universe are reported.     

Shortest Path Problem on a Network with Imprecise Edge Weight

A network with its arc lengths as imprecise number, instead of a real number, namely, interval number and triangular fuzzy number is considered here. Existing ideas on addition and comparison between two imprecise numbers of same type are introduced. To obtain a fuzzy shortest path from a source vertex to all other vertices, a common algorithm is developed which works well on both types of imprecise numbers under consideration. In the proposed algorithm, a decision-maker is to negotiate with the obtained fuzzy shortest paths according to his/her view only when the means are same but the widths are different of the obtained paths. Otherwise, a fuzzy optimal path is obtained to which the decision-maker always satisfies with different grades of satisfaction. All pairs fuzzy shortest paths can be found by repeated use of the proposed algorithm.     

Zone-refinement effect in small molecule-polymer blend semiconductors for organic thin-film transistors

The blend films of small-molecule semiconductors with insulating polymers exhibit not only excellent solution processability but also superior performance characteristics in organic thin-film transistors (OTFTs) over those of neat small-molecule semiconductors. To understand the underlying mechanism, we studied triethylsilylethynyl anthradithiophene (TESADT) with small amounts of impurity formed by weak UV exposure. OTFTs with neat impure TESADT had drastically reduced field-effect mobility (<10(-5) cm(2)/(V s)), and a disappearance of the high-temperature crystal phase was observed for neat impure TESADT. However, the mobility of the blend films of the UV-exposed TESADT with poly(α-methylstyrene) (PαMS) is recovered to that of a fresh TESADT-PαMS blend (0.040 cm(2)/(V s)), and the phase transition characteristics partly return to those of fresh TESADT films. These results are corroborated by OTFT results on "aged" TIPS-pentacene. These observations, coupled with the results of neutron reflectivity study, indicate that the formation of a vertically phase-separated layer of crystalline small-molecule semiconductors allows the impurity species to remain preferentially in the adjacent polymer-rich layer. Such a "zone-refinement effect" in blend semiconductors effectively removes the impurity species that are detrimental to organic electronic devices from the critical charge-transporting interface region.     

Geometric phase of a classical Aharonov–Bohm Hamiltonian

We present a gauge-invariant approach for associating a geometric phase with the phase space trajectory of a classical dynamical system. As an application, we consider the classical analog of the quantum Aharonov–Bohm (AB) Hamiltonian for a charged particle orbiting around a current carrying long thin solenoid. We compute the classical geometric phase of a closed phase space trajectory, and also determine its dependence on the magnetic flux enclosed by the orbit. We study the similarities and differences between this classical geometric phase and the AB phase acquired by the wave function of the quantum AB Hamiltonian. We suggest an experiment to measure the geometric phase for the classical AB system, by using an appropriate optical fiber ring interferometer.     

No intrinsic depletion layer on a polystyrene thin film at a water interface

Using neutron reflectivity, we found that there is no intrinsic depletion layer at a deuterated polystyrene (dPS) film and deuterium oxide (D(2)O) interface. A spun-cast film is susceptible to contamination on its surface from its surroundings during sample preparation. A contamination layer of hydrogenated organic material will be detected as a reduced scattering length density layer at the interface. We demonstrate that, by careful treatment of the film, contamination would be the primary cause of the reduced scattering length density layer at the interface.     

Analysis of the nonlinear vibration of a two-mass–spring system with linear and nonlinear stiffness

An analytical approach is developed for areas of nonlinear science such as the nonlinear free vibration of a conservative, two-degree-of-freedom mass–spring system having linear and nonlinear stiffnesses. The main contribution of this research is twofold. First, it introduces the transformation of two nonlinear differential equations for a two-mass system using suitable intermediate variables into a single nonlinear differential equation and, more significantly, the treatment of a nonlinear differential system by linearization coupled with Newton’s method. Secondly, the major section is the solving of the governing nonlinear differential equation where the displacement of the two-mass system can be obtained directly from the linear second-order differential equation using a first-order variational approach. The aforementioned approach proposed by J.H. He, who actually developed the method, is exactly He’s variational method. This approach is an explicit method with high validity for resolving strong nonlinear oscillation system problems. Two examples of nonlinear two-degree-of-freedom mass–spring systems are analyzed, and verified with published results and exact solutions. The method can be easily extended to other nonlinear oscillations and so could be widely applicable in engineering and science.     

Brillouin scattering study of elastic anomaly in (KCN)x(KBr)1−x system

Brillouin scattering is used to study concentration and temperature dependence of transverse acoustic phonon frequency ω_TA (110) in (KCN)_x(KBr)_1?x mixed crystals. Unlike pure KCN, mixed xrystals with x < 0.75 show no phase transition upon cooling, however, in these crystals we find a minimum in ω_TA as a function of temperature. This minimum can be understood in terms of dynamical theory of rotation-translation coupling in molecular crystals.