首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   3206篇
  免费   94篇
  国内免费   12篇
化学   2411篇
晶体学   44篇
力学   37篇
数学   92篇
物理学   728篇
  2022年   19篇
  2021年   28篇
  2020年   41篇
  2019年   36篇
  2018年   25篇
  2017年   20篇
  2016年   56篇
  2015年   49篇
  2014年   70篇
  2013年   125篇
  2012年   139篇
  2011年   161篇
  2010年   84篇
  2009年   98篇
  2008年   181篇
  2007年   158篇
  2006年   184篇
  2005年   183篇
  2004年   189篇
  2003年   156篇
  2002年   127篇
  2001年   72篇
  2000年   50篇
  1999年   54篇
  1998年   37篇
  1997年   40篇
  1996年   50篇
  1995年   49篇
  1994年   33篇
  1993年   33篇
  1992年   62篇
  1991年   47篇
  1990年   37篇
  1989年   41篇
  1988年   22篇
  1987年   33篇
  1986年   40篇
  1985年   48篇
  1984年   34篇
  1983年   23篇
  1982年   45篇
  1981年   40篇
  1980年   50篇
  1979年   31篇
  1978年   24篇
  1977年   24篇
  1976年   20篇
  1975年   27篇
  1974年   25篇
  1973年   31篇
排序方式: 共有3312条查询结果,搜索用时 15 毫秒
11.
A multiwall carbon nanotube crossroads has been fabricated by a manipulation technique using a glass microcapillary, and the low temperature transport properties investigated. The two-terminal conductance of an individual tube shows Tomonaga–Luttinger liquid behavior GTα at high temperature and dI/dVV α at low temperature. However, no evidence of such a power-law behavior is obtained in the four-terminal conductance at the junction, where the conductance shows an almost metallic behavior ‘corrected’ by weak localization. Weak localization would essentially appear in electron states at the junctions of MWNTs.  相似文献   
12.
13.
14.
15.
The current status of the R & D activities is presented on electron beam processing of polymers being carried out at TRCRE. Topics included are sterilization of medical products, graft polymers for selective separation or absorbents and curing of liquid prepolymer-monomer systems.  相似文献   
16.
17.
18.
Functionalization of self-assembled monolayer (SAM) of alkanethiolate with metal containing unit is one of the versatile methods to obtain functional surfaces such as heterogeneous catalysts. However, organic molecules that strongly bind to transition metals at SAM terminal are limited. Recently N-heterocyclic carbenes (NHCs) such as cyclic diaminocarbenes have emerged as strongly σ-donating ligands forming a robust bond with broad spectrum of transition metals. In the present study, for the purpose of establishment of a new robust basement for heterogeneous metal catalysts, a SAM of the alkanethiolate terminated with NHC-rhodium(I) complex moiety was prepared by utilizing a newly designed disulfide molecule bearing NHC-metal complex terminals. X-ray photoelectron spectroscopy (XPS) analysis and angle resolved XPS measurement revealed successful formation of the Rh-complex-terminated SAM on a gold substrate. Infrared reflection absorption spectroscopy (IRRAS) analysis suggested that the linker methylene chains connecting the rhodium complex moiety and the gold surface are in a loosely packed structure. This unique chemical species, NHC, would be a promising candidate as a basement for the construction of functional surface.  相似文献   
19.
20.
Keiji Maeda   《Applied Surface Science》2002,190(1-4):445-449
We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号