Structure,trend and prospect of operational research: a scientific analysis for publications from 1952 to 2020 included in Web of Science database

As an important research direction, operational research (OR) has always attracted scholars worldwide. We study the structure, trend and prospect in the OR field by conducting a bibliometric analysis of publications in the period of 1952–2020, which are included in the Web of Science (WoS) database. Using three effective bibliometric tools, namely, VOS viewer, CiteSpace, and Bibliometrix, a total of 5,353 publications were retrieved to show clear visual results using a series of scientific analyses. First, a performance analysis revealed the basic characteristics of publications considering the type distribution, annual trend, quantity and quality. Then, a cooperation analysis presented the influential countries/regions and showed the relationships among countries/regions, institutions and authors during different periods based on bibliometric indicators and co-authorship networks. Moreover, a keyword analysis was conducted to investigate the hot topics and development of the OR field, using co-occurrence analysis, timeline view analysis and evolution analysis. Finally, we discussed the implications and limitations, and summarized the main findings. This study hopes to provide important and valuable references for future research on the OR field.

     

Luminescence centers in porous silicon

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100–150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of andX band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.