Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。     

红外光谱对碱土金属二元羧酸盐结构的研究

研究了三十种二元羧酸金属盐的红外光谱，讨论了金属离子和二元酸的种类对二元酸盐配位结构的影响。发现Mg盐、Ba盐，Sr盐为螯合配位，Ca盐，Zn盐中同时存在螯合配位和桥式配位，二元酸的种类对羧酸盐配位结构没有影响。对羧酸盐在常温和熔融后的栩位方式和结构上的差异的研究结果表明，Mg盐，Ca盐与Sr盐，Ba盐在熔融后的结构变化不同。     

用三个关系式与Mathematica软件求第二类自然数幂和公式

首先介绍三个第二类自然数幂和关系式并对其中的两式给出证明,接着利用这些关系式与数学软件M athem atica4.0,给出求解第二类自然数幂和公式的若干机械计算方法.     

Entanglement system,Casimir energy and black hole

We investigate the connection between the entanglement system in Minkowski spacetime and the black hole using the scaling analysis. Here we show that the entanglement system satisfies the Bekenstein entropy bound. Even though the entropies of two systems are the same form, the entanglement energy is different from the black hole energy. Introducing the Casimir energy of the vacuum energy fluctuations rather than the entanglement energy, it shows a feature of the black hole energy. Hence the Casimir energy is more close to the black hole than the entanglement energy. Finally, we find that the entanglement system behaves like the black hole if the gravitational effects are included properly.     

新型金属杂冠醚配合物18-MC-6[Mn6(4-Amashz)6(DMF)6]·12DMF的合成

合成了一种新型金属杂冠醚配合物[Mn6(4-amashz)6(DMF)6]·12DMF,并用X射线衍射法对其结构进行了表征.研究了该化合物修饰金电极催化氧还原的性质,结果表明,该化合物具有平面碟状结构,对在碱性溶液中的氧有显著的催化还原作用.     

Different effects of cerium ions doping on properties of anatase and rutile TiO2

Pure and Ce⁴⁺ doped anatase and rutile TiO₂ were prepared by hydrothermal methods and characterized by XRD, TEM, UV-vis diffusion spectroscopy, and XPS measurements. The photocatalytic reactivity of the catalysts was evaluated by the photodegradation of Rhodamine B (RB) under ultraviolet irradiation. The photocatalytic efficiency of the rutile sample doped with an appropriate amount of Ce⁴⁺ was enhanced while all Ce⁴⁺ doped anatase samples showed a much lower activity than pure anatase. The reasons were discussed     

未知相关噪声环境下宽带源波达方向估计的快速算法

提出一种未知相关噪声环境下带源波达方向估计的快速算法。该算法只对信号子空间进行变换,直接由传播算子构造聚焦矩阵,得到一种快速TCT聚焦矩阵。利用阵列相关矩阵的酉相似变换特性估计噪声相关矩阵,提高了未知相关噪声情况下宽带DOA估计的性能。该算法由线性运算求解聚焦矩阵和噪声相关矩阵,无需特征分解,运算量低,而且适用于未知相关噪声情况,具有重要的工程实用价值。     

Relativistic Electromagnetic Solitary Wave in a Cylindrical Magnetized Plasma

In the presence of an applied static and uniform magnetic field, a cylindrical Kadomtsev-Petviashivili equation is derived for a relativistic electromagnetic solitary wave propagating in collisionless plasma consisting electrons, positrons, and ions in the case of weak relativistic limit. This equation is solved in a stationary frame to obtain explicit expression for the velocity, amplitude and width of solitons. The amplitude of the solitary wave has a maximum value at a critical αc of the ratio of the ion equilibrium density to the electron one, and it increases as the applied magnetic field becomes larger.     

Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells

The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.