石墨烯碳纳米管复合结构渗透特性的分子动力学研究

采用经典分子动力学方法研究了压力驱动作用下水在石墨烯碳纳米管复合结构中的渗透特性.研究结果表明,水分子渗透通过石墨烯碳纳米管复合结构的渗透率明显高于石墨烯碳纳米管组合结构.水在石墨烯碳纳米管复合结构中的渗透率随着压强的升高而增大,随着电场强度的增大而减小.考虑了温度和复合结构中双碳管轴心距对水渗透性的影响规律.系统温度越高,水的渗透率越高;随着双碳管轴心距的增加,水的渗透率逐渐降低.通过计算分析水流沿渗透方向的能障分布,解释了各参数变化对水在石墨烯碳管复合结构中渗透特性的影响机理.研究结果将为基于石墨烯碳管复合结构的新型纳米水泵设计提供一定的理论依据.     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

HIAF BRing及高能外靶实验终端的辐射屏蔽设计

强流重离子加速器（HIAF）是中国科学院近代物理研究所自主研制的一台高能强流重离子加速器,它可以实现p到U的全离子加速。为了保证HIAF运行时的辐射安全,针对该装置的增强器（BRing）及高能外靶实验终端,利用蒙特卡洛程序FLUKA及外推法计算得到了加速p,C及U三种离子时所需的辐射屏蔽。结果表明,加速质子时所需屏蔽厚度最大,并以此为依据给出了全地下结构的屏蔽设计。在此基础上,提出了一种估算高能质子/重离子加速器束流均匀损失时横向屏蔽厚度的方法。结果显示,估算结果与FLUKA计算结果符合较好,验证了该方法的有效性和准确性。High Intensity heavy-ion Accelerator Facility (HIAF) is designed by the Institute of Modern Physics, Chinese Academy of Sciences, which can accelerate particles from proton up to uranium. To guarantee the radiation safety of HIAF during operation, the FLUKA code and extrapolation method were adopted to calculate the shielding thickness. The calculations were based on proton, carbon and uranium particles when losing on the Booster Ring (BRing) and the high-energy experimental terminal. The results indicate that the shielding thickness required for accelerating protons was the largest. Basing on the results, a method for estimating the lateral shielding of a high-energy proton/heavy-ion accelerator was proposed. A good agreement shows between the estimated results and the FLUKA calculated results, the validity and accuracy of the method were verified.     

中重核中单粒子与集体运动的竞争效应(英文)

从原子核的电四极跃迁强度B（E2）中可以提取出原子核集体性和单粒子性质竞争的重要信息,其中一个重要的观测量是B（E2;4₁+ →2₁+）/B（E2;2₁+ →g.s.）的比值（B_4/2）。B_4/2一般要大于1,而且对于原子核转动和振动,我们应有B_4/2=1.4和2.0,但球形半满壳核一般会有不一样的性质。这些核的性质主要受对关联效应影响。介绍了几种超出我们一般认识的奇特衰变性质。Te同位素的基态带有鲜明的振动特性,但114Te的E2跃迁性质却更符合转动性。这些性质可以通过大规模壳模型计算来描述。对于填充j=9/2轨道的半满壳核,它们的4+和6+显示出很强的辛若数部分守恒性质。这种奇特的部分守恒可以被解析证明。而且我们的计算表明辛若数部分守恒对相关的E2跃迁影响很大。对于N=90附近具有量子相变行为的核素,其B_4/2也会也表现出相似的奇异特性。The E2 transition strength, B(E2), gives particularly precise information on the competition between the collective and single-particle degree of freedom. An important observable to study the development of collectivity is the B(E2; 4₁+ →2₁+)/B(E2; 2₁+ →g.s.) (B_4/2). The B_4/2 ratio is usually greater than unity. These values are 1.4 and 2.0 for an ideal rotor and a vibrator, respectively. Whereas the seniority scheme usually leads to different behaviours. In this contribution I will show examples that contrast with our standard understanding. The yrast spectra of Te isotopes show a vibrational-like equally-spaced pattern but the few known E2 transitions show anomalous rotational-like behaviour, which cannot be reproduced by collective models. Large-scale shell model calculations reproduce well the equally-spaced spectra of those isotopes as well as the constant behaviour of the B(E2) values in 114Te. For nuclei involving protons or neutrons in j=9/2 orbitals, the partial conservation of seniority can lead to dramatic changes to the E2 decay pattern that have never been seen before. The B_4/2 ratios in quantum phase transitional nuclei around N=90 also show a similar exotic feature.     

应力导致InAs/In0.15Ga0.85As量子点结构中 In0.15Ga0.85As阱层的合金分解效应研究

利用固源分子束外延技术,在In0.15Ga0.85As/GaAs量子阱生长了两个InAs/In0.15Ga0.85As量子点(DWELL)样品.通过改变其中一个InAs DWELL样品中的In0.15Ga0.85As阱层的厚度和生长温度,获得了量子点尺寸增大而且尺寸分布更均匀的结果.结合光致发光光谱(PL)和压电调制光谱(PzR)实验结果,发现该样品量子点的光学性质也同时得到了极大的优化.基于有效质量近似的数值计算结果表明:量子点后生长过程中应力导致In0.15Ga0.85As阱层合金分解机理是导致量子点尺寸和光学性质得到优化的主要原因.     

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers.     

Stable Electron Field Emission from CeO2 Nanowires by Hydrothermal Method

CeO2 nanowires are successful synthesized by hydrothermal method and their field emission （FE） properties are investigated. The turn-on electric field is 5.8 V/μm at an emitter-anode spacing of 700μm. The FE current is stable and the current fluctuations are less than 3% over 5 h. All the plotted Fowler-Nordheim curves yield straight lines, which are in agreement with the Fowler-Nordheim theory. The relationship between the field enhancement factor β and the emitter-anode spacing d follows a universal equation. Our results imply that the CeO2 nanowires are promising materials for fabricating FE cathodes.     

图形衬底对多周期InGaAs量子点自组装生长的影响

量子点器件技术广泛应用于量子计算和光电器件上.成核位置的均匀性、有序性和尺寸一致性,可以有效提高光电器件性能.为了实现阵列量子点的可控性,本文采用湿法刻蚀制备图形化衬底,理论上解释了铟原子在图形化衬底上成核现象,产生有序的量子点分布特征,发现图形衬底的缺陷诱导在平台边缘和沟壑边缘成核,形成较大的量子点.在Stranski-Krastanow模式下图形衬底制备多周期量子点,发现多周期生长可以弱化台阶结构对量子点分布的限制作用.     

MSM结构GaAs探测器的抗辐照性能

研究一种双金属接触的GaAs半导体探测器在14MeV中子辐照下的性能.测量了探测器经过10¹²n/cm²中子辐照剂量后的反向漏电流、电荷收集效率和最小电离粒子能谱,并且与⁶⁰Co 1.25MeV光子辐照的测量结果相比较.对中子辐照引起探测器时间性能变化和辐照损伤机制进行了探讨.并根据实验结果提出了这种双金属接触GaAs探测器灵敏层分布的一种假设,理论计算和实验数据相符合.     

Pb0.50Sr0.75Y0.70Ca0.25Cu1.70Oy单晶的磁阻研究

对低掺杂区非超导的Pb_(6.56)Sr_(?)Y_(?)Ca_(?)Cu_(?)O_y单晶样品进行了电阻和磁阻的测量,发现在低温下电阻温度关系遵从变程跳跃传导的R=R_(?)exp[(T_(?)/T)~(?)]的变化规律,这说明该样品处于强局域化区域.在低温下的磁阻为负并有明显的各向异性,这表明这类体系的磁阻主要来自于轨道效应的贡献,并且可能受到自旋-轨道散射的影响. 关键词：