High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

     

One nanosecond photon correlation spectroscopy on smectic liquid crystal films

We have extended photon correlation spectroscopy down to a one-nanosecond time scale, and applied it to a study of layer undulations in freestanding smectic-A films of two cyanobiphenyl liquid crystals. Temporal correlations in the intensity of scattered light reveal an interesting combination of under- and overdamped modes. The underdamped mode is accurately described by a recently calculated correlation function of the smectic layer displacement, although its frequency and damping rate exhibit stronger dispersion at large optical wave vectors than expected from current dynamical models for smectic films.     

Effect of composition modulation on the structural and optical properties of Si/Ge bilayers

We report structural as well as optical studies on Si/Ge bilayer structures having different individual layer thicknesses. The Raman spectrum of [Ge (5 nm)/Si (5 nm)] bilayer structure shows amorphous nature, while the [Si (5 nm)/Ge (5 nm)] bilayer structure shows a mixed nanocrystalline/amorphous behaviour of the layers. As the thickness of the individual layers increases to 10 nm, the introduction of large number of Si atoms at the interface results in reduction of Ge crystallization as well as higher intensity of interfacial SiGe alloy formation. This may be regarded as a consequence of the island growth induced surface roughening in the later case (i.e. in [Si (10 nm)/Ge (10 nm)] bilayer) as also revealed by corresponding atomic force microscopy (AFM) images. These results are also supported by Photoluminescence (PL) spectra recorded using two different photon energies of 300 and 488 nm along with the optical absorption measurements giving higher values of band gap as compared to their corresponding bulks, revealing the effect of quantum confinement in the deposited layers.     

Analyses of Lattice Traffic Flow Model on a Gradient Highway

The optimal current difference lattice hydrodynamic model is extended to investigate the traffic flow dynamics on a unidirectional single lane gradient highway. The effect of slope on uphill/downhill highway is examined through linear stability analysis and shown that the slope significantly affects the stability region on the phase diagram.Using nonlinear stability analysis, the Burgers, Korteweg-deVries(KdV) and modified Korteweg-deVries(mKdV) equations are derived in stable, metastable and unstable region, respectively. The effect of reaction coefficient is examined and concluded that it plays an important role in suppressing the traffic jams on a gradient highway. The theoretical findings have been verified through numerical simulation which confirm that the slope on a gradient highway significantly influence the traffic dynamics and traffic jam can be suppressed efficiently by considering the optimal current difference effect in the new lattice model.     

Effect of Tin Incorporation on Thermo-Mechanical Properties of Glassy Se80Te20 Alloy

We report an analysis on the hardness behavior of glassy Se80？xTe20Snx alloy. The crucial thermo-mechanical parameters （micro-hardness, volume and formation energy of micro-voids and the modulus of elasticity） are examined. The results indicate that the thermo-mechanical parameters are changed significantly after incorporation of Sn in glassy Se80Te20 alloy.     

Influence of Tb doping on the luminescence characteristics of ZnO nanoparticles

Structural and optical properties of the Tb-doped ZnO nanoparticles with average diameter ≈4 nm have been systematically investigated. Our X-ray diffraction studies show a contraction of the ZnO lattice with the increase of the Tb mole-fraction x for x ≤ 0.02 and an expansion beyond x ≈ 0.02. The photoluminescence spectra are found to be comprised of a near band edge ultra violet luminescence (UVL) and a broad green luminescence (GL) band. Under the atmospheric condition, the intensity of the GL band is found to increase with the Tb mole-fraction over the entire doping range. On the other hand, under the vacuum condition, it has been observed that the GL intensity decreases with the increase of x up to x ≈ 0.02 but further increase of x leads to a gradual revival of the GL emission. Our study suggests that for x ≤ 0.02, GL results due to the physisorption of certain groups on the surface of the nanoparticles (GL-groups). It is also found that in this Tb mole-fraction regime, Tb incorporates mostly on the surface of the nanoparticles and affects the UVL to GL intensity ratio by influencing the attachment of the GL-groups. However, for x > 0.02, GL originates not only from the GL-groups but also from certain point defects, which are likely to be generated due to the incorporation of Tb in the core of the nanoparticles. A simple rate equation model is introduced to get a quantitative understanding about the variation of the density of the centers responsible for the GL emission as a function of x under the atmospheric and the vacuum conditions.     

Anomalous variation of the Lamb-M?ssbauer factor at the magnetic transition temperature in magnetoelectric?GaFeO(3)

Temperature-dependent (57)Fe M?ssbauer spectroscopy (5-723?K) and neutron diffraction (2-290?K) measurements are carried out on polycrystalline magnetoelectric GaFeO(3). From the neutron diffraction data, evidence for the magnetostriction and increased disorder at Fe sites close to the ferrimagnetic Curie transition temperature (T(C)) is observed. From the M?ssbauer data, it is observed that the Lamb-M?ssbauer factor as a function of temperature f(T), which is related to the integral over the first Brillouin zone of the phonon spectrum, shows a unequivocal variation at the T(C). The observations are discussed in terms of spin-phonon coupling. The observed average hyperfine fields from (57)Fe M?ssbauer spectra match with the bulk magnetization data. A critical exponent (β) of 0.38?±?0.02 and a Debye temperature (θ(D)) of ～350?K is estimated from the (57)Fe M?ssbauer data.     

First principle electronic structure calculations of ternary alloys Hg1−xMnxTe in zinc-blende structure

We have investigated the structural, electronic, magnetic and optical properties of Hg_1?xMn_xTe in the zinc-blende phase for 0≤x≤1. The calculations were performed by using the full potential linearized augmented plane wave plus local orbitals method within the framework of the density functional theory. The lattice constants of Hg_1?xMn_xTe at different Mn concentrations exhibit Vegard's law perfectly. For spin-up channel the Mn 3d bands are occupied and mixed with the Te 5p bands whereas for spin-down channel the Mn 3d bands are unoccupied. The values of the p–d exchange splitting energy, ?_x(pd) as produced by the Mn 3d states are given. The contribution of the valence band and the conduction band in the process of exchange and splitting is described by the exchange coupling constants N₀α and N₀β. Due to p–d hybridization the magnetic moment of the Mn atom reduces, which results in small local magnetic moments on the non-magnetic Hg and Te sites. The potential applications of Hg_1?xMn_xTe in infrared device have been discussed on the basis of its optical properties.     

Dosimetric evaluation of an indigenously developed 10 MeV industrial electron beam irradiator

The high dose rate electron beams are increasingly being used for radiation processing of various products worldwide. A comprehensive dosimetric evaluation of an in-house developed 10 MeV industrial electron beam irradiator was carried out in static as well as in dynamic mode of irradiations. Radiochromic B3 film and graphite calorimeter were used for dosimetric measurements. The dose rate from the electron beam was also calculated using the empirical relation prescribed in the ASTM report E2232-02. The measured electron beam profile indicates the dose rate variation within 8% in the irradiated product boxes. The most probable energy determined from the depth dose distribution in PMMA, Al and water was found in agreement with the intended energy of the electron beam. Measured dose rate using radiochromic film and graphite calorimeter were found in good agreement with each other and also found comparable with the theoretically estimated dose rates. Experimentally measured dose rates were considered for the trial irradiation of medical and industrial products. Dosimetric data obtained through this study confirms the suitability of the irradiator for routine radiation processing of various products.