闪烁体荧光传输特性对ETOF探测器性能的影响

为了对BESⅢ端盖飞行时间探测器(ETOF)的测试结果给出合理的解释, 采用Monte Carlo模拟软件包Geant4, 对该探测器测量高能带电粒子的性能进行模拟研究. 详细探讨了当粒子击中ETOF模块不同位置时, 其闪烁体荧光传输特性与探测器模块输出信号之间的关联, 以及PMT输出信号甄别阈值的选取对闪烁探测器本征时间分辨的影响, 并寻找可能的改善时间分辨的方法. 为进一步提高ETOF的性能提供参考.     

Scheme for Implementing an N-Qubit Phase Gate via Selective Atom--Field Interaction with Cavity Quantum Electrodynamics

A scheme for implementing a two-qubit phase gate with atoms sent through a high-Q optical cavity is proposed by choosing nonidentical coupling constants between the atoms and cavity. The atomic spontaneous emission can be suppressed due to the large atom-field detuning. Moreover, the scheme can be generalized to implement an N-qubit phase gate and the gating time does not change with an increase of the number of qubits.     

反馈调制型同轴虚阴极振荡器

 对反馈调制型同轴虚阴极振荡器进行了理论分析和数值模拟研究,结果表明:该器件通过增加同轴谐振腔结构并引入反馈可以对入射电子束形成明显的调制效果,从而使得器件具有高束波转化效率和频率单一稳定的特性;同时输出微波的频率被器件结构中的同轴谐振腔锁定,调节腔参数可以在一定范围内对输出微波频率进行调谐;在二极管电压约为600 kV,电子束功率26.2 GW条件下,可以得到平均功率3.6 GW的微波输出,转换效率达到13.7%,主频为5.5 GHz,模式为TM₀₂模。     

纳秒脉冲气体放电机理探讨

 经典Townsend机理和流注理论是气体放电研究的基础,但在解释纳秒脉冲气体放电时均存在一定缺陷。基于经典气体放电理论,探讨纳秒脉冲气体放电机理,分析流注理论判据在纳秒脉冲气体放电中的有效性,解释纳秒脉冲下电子逃逸现象和基于电子逃逸的快速电离波击穿理论,仿真计算高能快电子的逃逸过程。结果认为基于高能量快电子的逃逸击穿将是可能解释纳秒脉冲下气体放电现象的依据。     

Entanglement reciprocation between two charge qubits and two-cavity field

We propose a simple scheme to generate two-mode entangled coherent state in two separated cavities and realize the entanglement reciprocation between the superconducting charge qubits and continuous-variable system. By measuring the state of charge qubits, we find that the entanglement of two charge qubits, which are initially prepared in the maximally entangled state, can be transferred to the two-cavity field, and at this time the two-cavity field is in the entangled coherent state. We also find that the entanglement can be retrieved back to the two charge qubits after measuring the state of the two-cavity field.      

Effect of Alumina and Chromium Interlayers on Microstructures and Optical Properties of Thin Ag Films on Glass Substrates

Effects of alumina and chromium interlayers on the microstructure and optical properties of thin Ag films are investigated by using spectrophotometry, x-ray diffraction and AFM. The characteristics of Ag films in Ag/glass, Ag/l2O3/glass and Ag/Cr/glass stacks are analysed. The results indicate that the insertion of an Al2O3 or Cr layer decreases the grains and influences the reflectance of Ag films. The reflectance of the Ag film can be increased by controlling the thickness of alumina interlayer. The stability of Ag films is improved and the adhesion of Ag films on glass substrates is enhanced by alumina as an interlayer.     

Picosecond Stimulated Raman Scattering of SrWO4 Crystal

Stimulated Raman scattering （SRS） of picosecond pulses is investigated in a new crystal SrWO4. The second harmonic generation of a mode-locked Nd：YAG laser system is used as the pump source. In an external singlepass configuration, the SRS thresholds for the first to the fourth Stokes lines are measured. For the first Stokes line, the steady-state gain coefficient of the SrWO4 crystal is calculated to be 15.96cm//GW. In our experiment, as many as five Stokes lines （559.23 nm, 589.61 nm, 623.49 nm, 661.50 nm, 704.44 nm） and three anti-Stokes lines （506.97nm, 484.34 nm, 463.65nm） are observed, and the total conversion efficiency is as high as 62%.     

半导体激光自混频干涉式传感器中的干涉与调制

应用F-P模型，阐述了半导体激光自混频干涉式传感器的干涉与调制过程，同时给出了相应的计算．     

Nd:YAG激光器光栅式扫描预处理的计算模拟与优化分析

 采用计算模拟的方法,研究了光栅式扫描预处理的扫描方式以及脉冲能量波动、定位误差对预处理效率的影响。研究发现,脉冲能量波动及其定位误差使预处理效率降低,同时其影响与扫描方式之间存在相互调制作用,因此可以通过选择合适的扫描方式以及扫描间隔来优化预处理流程,提高预处理效率。此外发现,光斑呈等边三角形排列时的预处理效率优于正方形。     

Influence of Different Substrates on Laser Induced Damage Thresholds at 1064nm of Ta2O5 Films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection （AR） and high reflector （HR） substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds （LIDTs） at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12 h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters： substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.