Resonant Raman scattering by strained and relaxed germanium quantum dots

This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO₂ layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm^?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed.     

Kinetic interpretation of the structural-time criterion for fracture

The incubation-period-based criterion for fracture is considered in terms of the Zhurkov kinetic model of fracture. Within the kinetic model, fracture is treated as a continuously developing process, which starts immediately after the application of a tensile load to a sample and consists in breaking of the interatomic bonds and gradual accumulation of broken bonds in the material in the course of a fracture test. For certain materials, the inclusion of the thermal-fluctuation mechanism for fracture in the incubation-period-based criterion significantly affects the position of the static branch of the time dependence of strength. Time dependences of strength are calculated for a number of materials. The experimental data are analyzed using the structural-time criterion for fracture, which allows one to obtain a unified time dependence of strength for quasi-static and high-rate short-term loadings. The temperature dependence of the incubation period (latent time) is calculated analytically, and a relation is found between the latent fracture time and the thermal vibration frequency of atoms.     

Refraction of surface spin waves in spatially inhomogeneous ferrodielectrics with biaxial magnetic anisotropy

The refractive index of surface spin waves propagating in a ferromagnetic medium with a nonuniform distribution of the parameters of uniaxial and orthorhombic magnetic anisotropies and exchange coupling is determined within the spin-density formalism. The coefficients of reflection and transmission of spin waves at the interface between two homogeneous magnets with different constants of uniaxial and orthorhombic magnetic anisotropies, exchange coupling, and saturation magnetization are calculated. The dependences of the intensity of a reflected wave and the refractive index on the wave frequency and the strength of an external dc homogeneous magnetic field are determined.     

Giant piezoelectric and dielectric enhancement in disordered heterogeneous systems

Effective complex piezoelectric and dielectric constants of disordered heterogeneous systems, such as statistical mixtures consisting of spheroidal particles of the same orientation but with random distribution in space, are studied. It is found for the first time that, in such systems, there exists giant piezoelectric enhancement accompanied by giant relaxation of piezoelectric coefficients and permittivity. The piezoelectric and dielectric spectra differ considerably from the Debye spectra and have a Cole-Cole character. The dependence of the effects considered on the aspect ratios of the spheroids is investigated. The physical mechanisms responsible for the anomalous behavior of the piezoelectric coefficients and permittivity are considered.     

Galvano-dipolar effect

The phenomenology of the photogalvanic effect permits prediction of a number of physical phenomena, the most interesting of which is the galvano-dipolar effect. This effect consists in the appearance of an electric dipole moment in a sample through which an electric current is passed. A possible microscopic mechanism of this phenomenon, which can be realized in centrosymmetric media as well, is considered.     

Local structure of Gd<Superscript>3+</Superscript> and Eu<Superscript>2+</Superscript> impurity centers in a CdF<Subscript>2</Subscript> crystal

The local crystal structure of Gd³⁺ and Eu²⁺ cubic impurity centers in cadmium fluoride is calculated within the shell model in the pair potential approximation. The local compressibility of the cationic and anionic sublattices of the host lattice is determined in the vicinity of the Gd³⁺ (Eu²⁺) impurity ion.     

Stress relaxation and viscosity of a bulk Pd<Subscript>40</Subscript>Cu<Subscript>30</Subscript>Ni<Subscript>10</Subscript>P<Subscript>20</Subscript> metallic glass under isochronous heating conditions

Isochronous relaxation of tensile stresses is measured in a bulk Pd₄₀Cu₃₀Ni₁₀P₂₀ metallic glass in the initial state and after certain thermal treatments. The results of measurements are used to find the energy spectrum of irreversible structural relaxation, from which the temperature dependence of shear viscosity is then calculated. This dependence is also found independently from measurements of creep in the same glass. The calculated viscosity is shown to agree well with the experimental data.     

Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

Physics of the Solid State - The growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces is investigated by scanning tunneling microscopy (STM). It is shown that the...     

Polygonization in high-purity rolled (001)[110] tungsten single crystals

Electron microscopy is used to study changes in the dislocation structure of high-purity rolled (001)[110] tungsten single crystals during short-term high-temperature annealings. The effects of the annealing temperature and time on the formation of low-angle boundaries are investigated. Local defects, which are similar to those detected earlier upon annealing in the structure of molybdenum single-crystal ribbons, are found to form and dissociate upon annealing. These defects are concluded to have a dislocation nature.     

Use of ultrafine-dispersed nanodiamond for selective deposition of boron-doped diamond films

A suspension of ultrafine-dispersed nanodiamond was used for introducing (in particular, selectively) high-density centers of diamond nucleation on various substrates. High-quality doped diamond films to be used as electrochemistry electrodes were deposited from the gas phase in a microwave discharge on certain substrates treated using ultrafine-dispersed nanodiamond. A uniform distribution of nucleation centers with concentrations greater than 10¹⁰ cm^-2 on silicon substrates was obtained. Electrochemical current-potential curves were measured for continuous films. Diamond meshes of different transparency were grown using selective nucleation. Successful production of high-quality doped diamond meshes gives grounds to consider them the most promising electrodes for use in electrochemistry.