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991.
992.
The role of impurity ions in formation of the optical properties of rare-earth orthoferrites is investigated. Optical spectra of the substituted against unsubstituted orthoferrites are presented. The influence of different isovalent substitutions on the optical absorption of orthoferrites that are promising for magnetooptics is studied. Institute of Solid-State and Semiconductor Physics of the Academy of Sciences of Belarus, 17, P. Brovka St., Minsk, 220072, Belarus. Translated from zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 5, pp. 642–645, September–October, 1997.  相似文献   
993.
Results of experimental investigations of the volt-brightness characteristics, frequency dependences of brightness, and the directional radiation pattern of electroluminescent MSDM, MSCM, and MSDCM emitters, where M stands for the first transparent and second nontransparent electrodes, S is a semiconductor, D is a thin-film dielectric, and C is a silicone-based composite liquid dielectric with a powdered segnetoelectric filler, developed on conventional “smooth” and rough glass substrates are presented. It is shown that electroluminescent structures on rough surfaces have a brightness approximately two times higher than that of similar structures developed on a “smooth” substrate. Ul’yanovsk State University, 42, L. Tolstoi St., Ul’yanovsk, 432700, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 507–512, July–August, 1997.  相似文献   
994.
A scheme for automated study of current-voltage characteristics of gyroresonance devices is developed. The effective emission spread at the cathodes of powerful gyrotrons is studied by analysis of current-voltage characteristics. Experimental data on the effective emission spread parameter for different modes are given. The permissible emission spread at the cathodes of powerful gyrotrons is estimated, and the dependence of the electron beam parameters on the cathode emission spread is presented. A complex measurement technique showing the contribution of different physical mechanisms to the cathode emission spread is proposed. Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 40, No. 4, pp. 506–516, April, 1997.  相似文献   
995.
The radiation-induced decomposition of C4F9I and CF3I overlayers at 119 K on diamond (100) surfaces has been shown to be an efficient route to fluorination of the diamond surface. X-ray photoelectron spectroscopy has been used for photoactivation as well as for studying the photodecomposition of the fluoroalkyl iodide molecules, the attachment of the photofragments to the diamond surface, and the thermal decomposition of the fluoroalkyl ligands. Measured chemical shifts agree well with ab initio calculations of both C 1s and F 1s binding energies. It is found that chemisorbed CF3 groups on diamond (100) decompose by 300 K whereas C4F9 groups decompose over the range 300 to 700 K and this reactivity difference is rationalized on steric grounds. Both of these thermal decomposition processes produce surface C---F bonds on the diamond. The surface C---F species thermally decompose over a wide temperature range extending up to 1500 K. Hydrogen passivation of the diamond surface is ineffective in preventing free radical attack from the photodissociated products of the fluoroalkyl iodides; I atoms produced photolytically abstract H from surface C---H bonds to yield hydrogen iodide at 119 K allowing diamond fluorination. The attachment of chemisorbed F species to the diamond (100) surface causes band bending as the surface states are occupied as a result of chemisorption. This results in a shift to higher binding energy of the diamond-related C 1s levels present in the surface and subsurface regions which are sampled by XPS on the diamond. The use of photoactivation of fluoroalkyl iodides for the fluorination of diamond surfaces provides a convenient route compared to other methods involving the action of atomic F, molecular F2, XeF2 and F-containing plasmas.  相似文献   
996.
Processing-induced residual strains in solid cylinders of Nickel 200 were investigated using phase shifting moiré interferometry. Two different experimental approaches were used to study the strains produced during Tungsten-inert gas spot welding. A comparison of results for a ‘hot/fast’ and a ‘cool/slow’ weld demonstrate the capabilities of the general approach. Both experimental methods revealed distinct differences in the residual displacement and strain fields between the two types of welds.  相似文献   
997.
In this article we have studied the nonlinear interaction between ellipticity and dissipation in a set of model equations (1.1) and established the relation between this interaction and chaos. In addition to theoretical investigations, extensive numerical simulations with these equations have been made, and different routes to chaos have been found. The numerical studies have revealed the chaotic nature of the solutions.  相似文献   
998.
The origin of the widely observed enhancement of rates for electron-ion recombination at very low energies is still unknown. We investigated the recombination of Au25+ with free electrons in a merged-beams experiment at the UNILAC accelerator of the GSI in Darmstadt. At E rel= 0 eV we found an enormous enhancement factor of 365 compared to the theory of radiative recombination. An increase of the electron density by a factor of 10 had not much influence on the measured rate coefficient. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   
999.
We consider the application of asymptotic methods of nonlinear mechanics (the Krylov-Bogolyubov-Mitropol'skii method) and the method of separation of motions in nonlinear systems for the construction of an approximate solution of a nonlinear equation that describes a nonstationary wave process. Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 50, No. 3, pp. 357–371, March, 1998.  相似文献   
1000.
The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×1013 cm−3) and antimony (Sb: 2×1018 cm−3) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)  相似文献   
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