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111.
In agreement with the Kohn theorem the relative motion (rel) of three electrons in a two-dimensional parabolic trap separates from the centre-of-mass (CM) motion. By introducing new coordinates the Hamiltonian for relative motion in the approximation of non-interacting electrons can be taken to the normal form. The eigenstates of the normalized Hamiltonian are products of the Fock-Darwin states for normal modes. The energy levels for relative motion are obtained by diagonalizing the exact Hamiltonian in the eigenbasis for the non-interacting case. In this basis the interaction matrix elements can be obtained in the analytical form. Since the rank of the Hamiltonian matrix is significantly reduced, the calculations are faster and more accurate than those for the full (CM + rel) motion. This advantage is especially important for the calculations of excited states and the analysis of energy spectra.  相似文献   
112.
On Quantum Team Games   总被引:2,自引:0,他引:2  
Recently Liu and Simaan (2004) convex static multi-team classical games have been introduced. Here they are generalized to both nonconvex, dynamic and quantum games. Puu's incomplete information dynamical systems are modified and applied to Cournot team game. The replicator dynamics of the quantum prisoner's dilemma game is also studied.  相似文献   
113.
A systematic study on the electrochemical behavior of diosmin in Britton-Robinson buffer (pH 2.0-10.0) at a glassy carbon electrode (GCE) was made. The oxidation process of the drug was found to be quasi-reversible with an adsorption-controlled step. The adsorption stripping response was evaluated with respect to various experimental conditions, such as the pH of the supporting electrolyte, the accumulation potential and the accumulation time. The observed anodic peak current at +0.73 V vs. Ag/AgCl reference electrode increased linearly over two orders of magnitude from 5.0x10(-8) M to 9.0x10(-6) M. A limit of detection down to 3.5x10(-8) M of diosmin at the GCE was achieved with a mean recovery of 97+/-2.1%. Based on the electrochemical data, an open-circuit accumulation step in a stirred sample solution of BR at pH 3.0 was developed. The proposed method was successfully applied to the determination of the drug in pharmaceutical formulations. The results compared favorably with the data obtained via spectrophotometric and HPLC methods.  相似文献   
114.
We report the results of an X-ray diffraction study of CdAl2Se4 and of Raman studies of HgAl2Se4 and ZnAl2Se4 at room temperature, and of CdAl2S4 and CdAl2Se4 at 80 K at high pressure. The ambient pressure phase of CdAl2Se4 is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl2Se4 and ZnAl2Se4 reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl2S4 and CdAl2Se4, which shows a very weak temperature dependence of the Raman-active phonon modes.  相似文献   
115.
We have developed a new tool for numerical work in General Relativity: GRworkbench. We discuss how GRworkbench's implementation of a numerically-amenable analogue to Differential Geometry facilitates the development of robust and chart-independent numerical algorithms. We consider, as an example, geodesic tracing on two charts covering the exterior Schwarzschild space-time.  相似文献   
116.
 We study the eigenvalue problem with the boundary conditions that decays to zero as z tends to infinity along the rays , where is a real polynomial and . We prove that if for some we have for all , then the eigenvalues are all positive real. We then sharpen this to a larger class of polynomial potentials. In particular, this implies that the eigenvalues are all positive real for the potentials when with , and with the boundary conditions that decays to zero as z tends to infinity along the positive and negative real axes. This verifies a conjecture of Bessis and Zinn-Justin. Received: 16 January 2002 / Accepted: 1 May 2002 Published online: 6 August 2002  相似文献   
117.
 Let U be an n × n random matrix chosen from Haar measure on the unitary group. For a fixed arc of the unit circle, let X be the number of eigenvalues of M which lie in the specified arc. We study this random variable as the dimension n grows, using the connection between Toeplitz matrices and random unitary matrices, and show that (X -E [X])/(\Var (X))1/2 is asymptotically normally distributed. In addition, we show that for several fixed arcs I 1 , ..., I m , the corresponding random variables are jointly normal in the large n limit. Received: 15 November 2000 / Revised version: 27 September 2001 / Published online: 17 May 2002  相似文献   
118.

Harmonic mappings from the Sierpinski gasket to the circle are described explicitly in terms of boundary values and topological data. In particular, all such mappings minimize energy within a given homotopy class. Explicit formulas are also given for the energy of the mapping and its normal derivatives at boundary points.

  相似文献   

119.
This primer provides a self-contained exposition of the case where spatial birth-and-death processes are used for perfect simulation of locally stable point processes. Particularly, a simple dominating coupling from the past (CFTP) algorithm and the CFTP algorithms introduced in [13], [14], and [5] are studied. Some empirical results for the algorithms are discussed. Received: 30 June 2002  相似文献   
120.
The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.  相似文献   
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