Application of a novel large-volume injection method using a stomach-shaped inlet liner in capillary gas chromatographic trace analysis of dioxins in human milk and plasma.

A newly developed large-volume injection (LVI) technique that employs a unique stomach-shaped inlet liner (SSIL) inside of a programmable temperature vaporizer was used for the determination of trace amounts of dioxins in human milk and plasma. The initial temperature and the initial dwelling time of the inlet and the kind of solvent used were found to be critical in determining the analytical sensitivity of dioxins due to the loss of these relatively volatile compounds during solvent vaporization. Human milk and plasma were purified and fractionated by pre-packed multi-layered silica-gel chromatography and activated carbon silica-gel column chromatography. A 20-microL aliquot of the fraction collected from the chromatography with toluene was directly applied to the LVI system in high-resolution gas chromatography/high-resolution mass spectrometry. Excellent correlation (r > 0.97) between the values obtained by the LVI method using the SSIL device and those by the conventional regular-volume splitless injection method was obtained for PCDDs, PCDFs and non-ortho PCBs in human milk and plasma samples.     

The isolation and structure elucidation of new cassane diterpene-acids from Caesalpinia crista L. (Fabaceae), and review on the nomenclature of some Caesalpinia species

New cassane diterpene-acids, neocaesalpins H and I, were isolated from the leaves of Caesalpinia crista (Fabaceae), and their structures were deduced on the basis of the spectroscopic and chemical basis. These compounds were characterized as having an alpha,beta-butenolide hemiacetal ring that is rare in nature. The lacking of 5-hydroxy group also distinguished neocaesalpins H and I from cassane diterpenes (caesalpins) occurring in other Caesalpinia species from the phytochemical viewpoint. The nomenclature of three Caesalpinia species was also reviewed, and it was found that some species belonging to the genus Caesalpinia are improperly named and should be changed to valid names.     

Asymmetric Carroll rearrangement of allyl alpha-acetamido-beta-ketocarboxylates catalysed by a chiral palladium complex

Asymmetric decarboxylative rearrangement (Carroll rearrangement) of allyl alpha-acetamido-beta-ketocarboxylates was catalysed by a palladium complex modified with a chiral phosphine ligand, giving optically active gamma,delta-unsaturated alpha-aminoketones with up to 90% ee.     

Raman scattering in low wavenumber region as a new probe to structural properties of microcrystalline silicon

The structural properties of microcrystalline silicon (μc-Si) are studied by Raman scattering. It is found that the intensity of each Raman band closely correlates with the absorption coefficient in the interband region and that the Raman band at ca. 150 cm^?1 is a sensitive probe to randomness of Si-Si bonding structure in μc-Si.     

Some propositions on caustics and an application to the biaxial-fracture problem

Some fundamental problems on the optical method of caustics, which is used to determine the value of the stress-intensity factor, are studied. The paper shows that the radiusr _o of the initial curve considerably affects the results and describes a method to eliminate this effect. This method is also applied to the biaxial-stress fracture problem. It is shown that the biaxial stress affects the fracture toughness of thin specimens of Plexiglas sheets and that the fatigue-crack-growth rate is increased due to the compressive stress along the crack line.Paper was presented at 1982 SESA/JSME Spring Meeting held in Oahu and Maui, HI on May 23–29, 1982.     

The translation-rotation paradox in the nucleation theory

The factor of 10¹⁷ proposed by Lothe and Pound in the theory of nucleation of droplets from the vapor phase is studied using classical statistical mechanics. The controversial factor is derived from partition functions for an isolatedn-mer and for ann-molecular cluster imbedded in the bulk liquid phase. The rotational degrees of freedom have no place in, in agreement with Reiss, Katz, and Cohen's treatment. It is proved that the surface free energy of a cluster is proportional to the surface area. The estimate of what Lothe and Pound called the replacement term is different from those of previous authors. It is concluded that is written as a ratio = _g/_l, where _g and _l , are the volumes per molecule in the gas phase and in the liquid phase, respectively. For water at 300K, is approximately equal to 10₄.     

Amorphous GaP produced by ion implantation

Two types of non-crystalline states (“disordered” and “amorphous”) of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the “disordered” state to the “amorphous” state was observed.The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV ? N⁺ ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity.The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose.The optical absorption coefficient α and electric conductivity σ of GaP crystals implanted with 200 keV?N⁺ ions of 1 × 10¹⁶ cm^?2 were expressed as αhν = C(hν ? E₀)ⁿ and log $\text{σ = A ? BT}{}^{\mathrm{<mtext>-</mtext><mtext>1</mtext><mtext>4</mtext>}}$, respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order nor a short range order (“disordered state”).In the sample implanted at 1 × 10¹⁶ cm^?2, a structural phase-transition-like annealing stage was observed at around 400°C. That is, the optical absorption coefficient α abruptly fell off from 6 × 10⁴ to 7 × 10³ cm^?1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing.These facts lead us to believe that heavily implanted GaP, followed by annealing at around 400°C, is in the “amorphous” state, although as-implanted Gap is not in the “amorphous” state but in the “disordered” state.