Effect of growth interruptions on ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy

We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWs) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As₂ annealing of the QW. Their formation is characterized by a two- to three-dimensional transition of the reflection high energy electron diffraction (RHEED) pattern and by multiple-line photoluminescence spectra. This interpretation of the data is confirmed by transmission electron microscopy (TEM).