几种Bi-2223/Ag超导带材层状复合结构的制备及性能研究

本文利用Bi-2223/Ag高温超导带材与抗拉强度σb为700MPa的铜带进行组合,带材宽度面间采用低熔点的Sn-Ag-Cu无铅焊料进行连接,制备了C-SC-C型、SC-C-SC型(C代表铜带,SC代表高温超导带)等四种层状复合结构.研究和考察了四种结构样品在室温下的拉伸性能和弯曲性能,以及电性能等.测试结果表明:与高温超导带材相比,复合后结构的拉伸性能得到了提高;复合结构中采用两根高温超导带材后,提高了传输电流的能力.研究结果为Bi-2223/Ag高温超导带材的实际应用以及新应用结构的设计提供了参考数据和实验依据.     

Mg2Sn电子结构及热力学性质的第一性原理计算

采用基于第一性原理的赝势平面波方法系统地计算了Mg2Sn基态的电子结构、弹性常数和热力学性质.计算结果表明Mg2Sn的禁带宽度为0.1198eV.运用线性响应方法确定了声子色散关系和态密度,得出Mg2Sn的热力学性质如等容比热和德拜温度.计算Mg2Sn的热导率并与实验数据相比较.     

Electronic Curves Crossing in Methyl Iodide by Spin--Orbit Ab Initio Calculation

An ab initio investigation of electronic curve crossing in a methyl iodide molecule is carried out using spin-orbit multiconfigurational quasidegenerate perturbation theory. The one-dimensional rigid potential curves and optimized effective curves of low-lying states, including spin-orbit coupling and relativistic effects, are calculated. The spin-orbit electronic curve crossing between ^3Qo＋ and ^1Q1, and the shadow minimum in potential energy curve of ^3Qo＋ at large internuclear distance are found in both sets of the curves according to the present calcu- lations. The crossing position is in the range of Re-1 = 0.2370 3：0.0001 nm. Comparisons with other reports are presented.     

Tm:Ho co-doped single mode optical fibre laser pumped by a 1600 nm Er fibre laser

An all-fibre Tm:Ho laser system is reported, using a 1600 nm Er fibre pump laser and 0.3 m length of the fibre through a two-stage optimization of both the pump source and laser configuration to achieve a low threshold operation. As a result a low threshold power of 33 mW and a slope efficiency of 0.6% have been achieved, in laser operation at a wavelength of 1870 nm and a cross-comparison with 785 nm laser diode pumping has been made.     

26.3-W continuous-wave, diode-double-end-pumped all-solid-state Nd:GdVO4 laser operating at 1.34 μm

A high-power continuous-wave (CW) all-solid-state Nd:GdVO₄ laser operating at 1.34 μm is reported here. The laser consists of a low doped level Nd:GdVO₄ crystal double-end-pumped by two high-power fiber-coupled diode lasers and a simple plane-parallel cavity. At an incident pump power of 88.8 W, a maximum CW output of 26.3 W at 1.34 μm is obtained with a slope efficiency of 33.7%. To the best of our knowledge, this is the highest output at 1.34 μm ever generated by diode-end-pumped all-solid-state lasers.     

Nonlinear optical properties of Au/ZnO nanoparticle arrays

The triangular-shaped Au/ZnO nanoparticle arrays were fabricated on fused quartz substrate using nanosphere lithography. The structural characterization of the Au/ZnO nanoparticle arrays was investigated by atomic force microscopy. The absorption peak due to the surface plasmon resonance of Au particles at the wavelength of about 570 nm was observed. The nonlinear optical properties of the nanoparticle arrays were measured using the z-scan method at a wavelength of 532 nm with pulse duration of 10 ns. The real and imaginary part of third-order nonlinear optical susceptibility, Re χ⁽³⁾ and Im χ⁽³⁾, were determined to be 1.15 × 10⁻⁶ and −5.36 × 10⁻⁷ esu, respectively. The results show that the Au/ZnO nanoparticle arrays have great potential for future optical devices.     

Effect of surface modification by thermally oxidization and HF etching on UV photoluminescence emission of porous silicon

Photoluminescence of porous silicon (PS) is instable due perhaps to the nanostructure modification in air. The controllable structure modification processes on the as-prepared PS were conducted by thermal oxidization and/or HF etching. The PL spectra taken from thermally oxidized PS showed a stable photoluminescence emission of 355 nm. The photoluminescence emission taken from both of PS and oxidized porous silicon (OPS) samples etched with HF were instable, which can be reversibly recovered by the HF etching procedure. The mechanism of UV photoluminescence is discussed and attributed to the transformation of luminescence centers from oxygen deficient defects to the oxygen excess defects in the thermal oxidized PS sample and surface absorbed silanol groups on PS samples during the chemical etched procedure.     

Structure and micro-mechanical properties of helium-implanted layer on Ti by plasma-based ion implantation

The present paper concentrates on structure and micro-mechanical properties of the helium-implanted layer on titanium treated by plasma-based ion implantation with a pulsed voltage of −30 kV and doses of 3, 6, 9 and 12 × 10¹⁷ ions/cm², respectively. X-ray photoelectron spectroscopy and transmission electron microscopy are employed to characterize the structure of the implanted layer. The hardnesses at different depths of the layer were measured by nano-indentation. We found that helium ion implantation into titanium leads to the formation of bubbles with a diameter from a few to more than 10 nm and the bubble size increases with the increase of dose. The primary existing form of Ti is amorphous in the implanted layer. Helium implantation also enhances the ingress of O, C and N and stimulates the formations of TiO₂, Ti₂O₃, TiO, TiC and TiN in the near surface layer. And the amount of the ingressed oxygen is obviously higher than those of nitrogen and carbon due to its higher activity. At the near surface layer, the hardnesses of all implanted samples increases remarkably comparing with untreated one and the maximum hardness has an increase by a factor of up to 3.7. For the samples implanted with higher doses of 6, 9 and 12 × 10¹⁷ He/cm², the local displacement bursts are clearly found in the load-displacement curves. For the samples implanted with a lower dose of 3 × 10¹⁷ He/cm², there is no obvious displacement burst found. Furthermore, the burst width increases with the increase of the dose.     

Fabrication of microelectrodes deeply embedded in LiNbO3 using a femtosecond laser

We present a novel technique to fabricate deeply embedded microelectrodes in LiNbO₃ using femtosecond pulsed laser ablation and selective electroless plating. The fabrication process mainly consists of four steps, which are (1) micromachining of microgrooves on the surface of LiNbO₃ by femtosecond laser ablation; (2) formation of AgNO₃ films on substrates; (3) scanning the femtosecond laser beam in the fabricated microgrooves for modification of the inner surfaces; and (4) electroless copper plating. The void-free electroless copper plating is obtained with appropriate cross section of microgrooves and uniform initiation of the autocatalytic deposition on the inner surface of grooves. The dimension and shape of the microelectrodes could be accurately controlled by changing the conditions of femtosecond laser ablation, which in turn can control the distribution of electric field inside LiNbO₃ crystal for various applications, opening up a new approach to fabricate three-dimensional integrated electro-optic devices.