Bi53+‐Polykationen in geordneten und plastischen Kristallen von Bi5[AlI4]3 und Bi5[AlBr4]3

Bi₅³⁺ Polycations in Ordered and Plastic Crystals of Bi₅[AlI₄]₃ and Bi₅[AlBr₄]₃ Dark‐red air‐sensitive crystals of pentabismuth‐tris(tetrabromoaluminate) Bi₅[AlBr₄]₃ and black crystals of Bi₅[AlI₄]₃ have been crystallized from melts of Bi, BiX₃ and AlX₃ (X = Br, I). X‐ray diffraction on a single crystal of Bi₅[AlI₄]₃ (T = 293(2) K; space group Pnma; a = 2143.6(3) pm, b = 1889.1(1) pm, c = 811.74(5) pm) revealed an ordered packing of Bi₅³⁺ trigonal bipyramids and [AlI₄]^? tetrahedra that corresponds to the PuBr₃ structure type. Contrary to the so far known Bi₅³⁺ polycations with accurate D_3h symmetry, the bismuth cluster found in Bi₅[AlI₄]₃ holds only C_s symmetry. The room temperature structure of the tetrabromoaluminate Bi₅[AlBr₄]₃, which is related to the AuCu₃ type, shows a dynamic disorder of the Bi₅³⁺ polycations (T = 293(2) K; space group ; a = 1766.2(3) pm). Slight cooling induces the transition into an ordered rhombohedral phase isostructural to Bi₅[AlCl₄]₃ (T = 260(2) K; space group a = 1241.5(8) pm, c = 3041(2) pm).     

[P3Se4]+: A Binary Phosphorus–Selenium Cation

Although a fairly large number of binary group 15/16 element cations have been reported, no example involving phosphorus in combination with a group 16 element has been synthesized and characterized to date. In this contribution is reported the synthesis and structural characterization of the first example of such a cation, namely a nortricyclane‐type [P₃Se₄]⁺. This cation has been independently discovered by three groups through three different synthetic routes, as described herein. The molecular and electronic structure of the [P₃Se₄]⁺ cage and its crystal properties in the solid state have been characterized comprehensively by using X‐ray diffraction, Raman, and nuclear magnetic resonance spectroscopies, as well as quantum chemical calculations.     

Bridging Nonaselenium Ring in [Se9(IrBr3)2], and Three Modifications of the Mononuclear Complex [IrBr3(SeBr2)3]

The reaction of iridium powder with an excess of selenium and SeBr₄ yielded lustrous, vermillion crystals of the mononuclear iridium complex [IrBr₃(SeBr₂)₃]. The transition metal is coordinated octahedrally by three SeBr₂ and three bromide ligands with facial or meridional configuration. Three different modifications were obtained under similar conditions: a‐fac‐IrBr₃(SeBr₂)₃, space group P$\bar{1}$ , with a = 789.4(1) pm, b = 830.4(1) pm, c = 1334.4(1) pm, α = 81.634(5)°, β = 84.948(5)°, γ = 67.616(4)°; m‐fac‐IrBr₃(SeBr₂)₃, space group P2₁/n, with a = 1205.3(1) pm, b = 962.4(1) pm, c = 1383.9(1) pm, β = 91.114(3)°; mer‐IrBr₃(SeBr₂)₃, space group P2₁/n with a = 859.7(1) pm, b = 1284.3(1) pm, c = 1437.5(1) pm, β = 94.427(3)°. A lower bromine content in the starting composition resulted in shiny, deep‐red crystals of [Se₉(IrBr₃)₂]. X‐ray diffraction on a single‐crystal revealed a tetragonal lattice (space group I4₁/a) with a = 1245.4(1) pm and c = 2486.8(1) pm at 296(1) K. In the [Se₉(IrBr₃)₂] complex, a crown‐shaped uncharged Se₉ ring coordinates two iridium(III) cations as a bridging bis‐tridentate ligand. Three terminal bromide ions complete the distorted octahedral coordination of each transition metal atom.     

The Weak 3D Topological Insulator Bi12Rh3Sn3I9

Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation-free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well-characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth-based subiodides and recently succeeded in synthesizing a new compound Bi₁₂Rh₃Sn₃I₉, which is structurally closely related to Bi₁₄Rh₃I₉ – a stable, layered material. In fact, Bi₁₄Rh₃I₉ is the first experimentally supported weak 3D TI. Both structures are composed of well-defined intermetallic layers of _∞²[(Bi₄Rh)₃I]²⁺ with topologically protected electronic edge-states. The fundamental difference between Bi₁₄Rh₃I₉ and Bi₁₂Rh₃Sn₃I₉ lies in the composition and the arrangement of the anionic spacer. While the intermetallic 2D TI layers in Bi₁₄Rh₃I₉ are isolated by _∞¹[Bi₂I₈]²⁻ chains, the isoelectronic substitution of bismuth(III) with tin(II) leads to _∞²[Sn₃I₈]²⁻ layers as anionic spacers. First transport experiments support the 2D character of this material class and revealed metallic conductivity.     

Local and Permeating Disorder of Copper(I) Cations in Cu3BiS2Br2 and Cu4Bi3S5Br3–xClx (x = 1.19)

Melting reactions of Bi₂S₃, CuX (X = Cl, Br), copper, and sulfur resulted in black needles of qua‐ and quinternary copper bismuth sulfide halogenides. Cu₃BiS₂Br₂ (I) has a melting point of 638(5) K and crystallizes in the orthorhombic space group Pnma with a = 804.50(6) pm, b = 393.27(3) pm, and c = 2253.2(2) pm at T = 293(2) K. Cu₄Bi₃S₅Br_3–xCl_x (x = 1.19(2)) (II) crystallizes in the monoclinic space group I2/m with lattice parameters a = 1573.7(2) pm, b = 397.52(3) pm, c = 2164.9(3) pm, and β = 95.66(1) °. Both compounds exhibit networks of thio‐halogenido‐bismuthate(III) polyhedra that join corners, edges, and faces. The copper(I) cations are spread over numerous contiguous trigonal or tetrahedral voids. In case of (II) a continuous pathway for copper ion transport along [010] is formed. The pseudo‐potential barrier for hopping of copper ions was calculated as 30 meV only.     

An iridium-stabilized, formally uncharged te(10) molecule with 3-center-4-electron bonding

Te for 10: A tricyclic Te(10) molecule is stabilized in an iridium complex. Bonding analysis reveals 3-center-4-electron bonds in the linear Te(3) fragment. The tellurium atoms act as 2-electron donors to the transition-metal atoms.     

A Semiconductor or A One-Dimensional Metal and Superconductor through Tellurium π Stacking

One-dimensional conductor: Strong π?interactions between ecliptically stacked tellurium squares in Te(4) [Bi(0.74) Cl(4) ] trigger excellent one-dimensional metallic conductivity as well as superconductivity below 7.15?K under ambient pressure. The electron-precise counterpart, Te(4) [Bi(0.67) Cl(4) ], is a semiconductor. The bismuth content and temperature- dependent competition of intra- and inter-ring bonding account for the electronic conduction.     

Bi2223带材临界电流沿长度方向的统计分布

本文采用四引线法测量了Bi2223带材临界电流沿长度方向的分布,采用正态分布、对数正态分布、威布尔分布和最小极值分布对临界电流分布进行了拟合检验,确定了临界电流的最优统计分布模型.