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71.
S. Yu. Paranchich L. D. Paranchich V. N. Makogonenko V. R. Romanyuk M. D. Andriichuk Yu. V. Tanasyuk 《Journal of Applied Spectroscopy》2003,70(3):427-431
The optical and photoelectric properties of CdTe:V crystals with the doping impurity concentration N
V = 5·1018–5·1019 cm–3 are investigated and the possibility of their use as a photorefractive material is considered. As is seen from the spectra of optical transmission, the crystals of both types possess high transparency (50–65%), which for CdTe:V specimens with N
V = 5·1019 cm–3 decreases sharply and in the range 12–14 m does not exceed 5%, whereas for CdTe:V crystals with vanadium concentration of 5·1018 cm–3 such a value of transmission remains unchanged up to 25 m, implying a good optical quality of the latter crystals and their possible application in the spectral range 1.06–1.25 m in modern fiber-optic communication lines. 相似文献
72.
A. S. Romanyuk 《Mathematical Notes》2007,82(1-2):216-228
We study best M-term trigonometric approximations and best orthogonal trigonometric approximations for the classes B pθ r and W pα r of periodic functions of several variables in the uniform metric. 相似文献
73.
The infrared reflectance spectra of a mechanically free or uniaxial-pressure-confined (NH4)2SO4 crystal were studied for the first time in the spectral range 800–1700 cm?1 in three crystallographic directions. Using the Kramers-Kronig relations, the dispersion and pressure dependences of the following quantities are obtained: the index of refraction n, the real (?1) and imaginary (?2) parts of the permittivity, the frequencies of longitudinal (ωLO) and transverse (ωTO) optical vibrations, the damping constant γ, and the oscillator strength f of the mechanically free or clamped (NH4)2SO4 crystal. A considerable change in the main reflection bands with pressure was observed, which is due to the effect of uniaxial pressure on the NH4 and SO4 tetrahedral frames. 相似文献
74.
Ukrainian Mathematical Journal - We obtain the exact-order estimates of the Kolmogorov widths and entropy numbers for the classes $$ {\mathbbm{W}}_{p,\alpha}^r $$ and $$ {\mathbbm{B}}_{p,\theta}^r... 相似文献
75.
The initial stages of Ge growth on Si(111) vicinal surfaces tilted in the [ $\overline 1 \overline 1 2$ ] and [ $11\overline 2 $ ] directions were studied in situ in the temperature range 350–500°C using scanning tunneling microscopy. It was shown that, at low Ge deposition rates of 10?2 to 10?3 BL/min, ordered Ge nanowires can form on surfaces tilted in the [ $\overline 1 \overline 1 2$ ] direction under conditions of step-layered growth. The height of a nanosized Ge wire is one or three interplanar distances and is determined by the initial height of a silicon step. It was established that, during epitaxial growth, steps with a [ $11\overline 2 $ ] front are replaced by steps with a [ $\overline 1 \overline 1 2$ ] front. As a result, the step edge is serrated and the formation of smooth nanosized Ge wires uniform in width is hampered on the serrated Si(111) surfaces tilted in the [ $11\overline 2 $ ] direction. 相似文献
76.
77.
Oleksandr Romanyuk Oliver Supplie Agnieszka Paszuk Jan Philipp Stoeckmann Regan George Wilks Jakob Bombsch Claudia Hartmann Raul Garcia-Diez Shigenori Ueda Igor Bartoš Ivan Gordeev Jana Houdkova Peter Kleinschmidt Marcus Bär Petr Jiříček Thomas Hannappel 《Surface and interface analysis : SIA》2020,52(12):933-938
We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested. 相似文献
78.
Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface
The formation of dislocation-rich and dislocation-free silicon islands during growth in the absence of mechanical stresses
has been studied by scanning tunneling microscopy. The rounded shape of islands obtained at growth temperatures of 400–500°C
on the oxidized Si(111) surface is associated with the presence of dislocations within them. The transfer of atoms from the
oxidized surface to the islands occurs due to the barrier of the potential energy at the SiO2/Si boundary. The {111} and {311} facets dominate in the shape of the islands grown at 500–550°C. Their appearance indicates
the absence of the threading dislocations in the islands and that the growth is limited by the stage of the nucleation of
a new atomic layer. 相似文献
79.
A. S. Romanyuk 《Ukrainian Mathematical Journal》1998,50(8):1242-1252
We obtain estimates exact in order for the trigonometric widths of the Besov classes B
p,θr of periodic functions of many variables in the space L
q for 1 ≤ p ≤ 2 < q < p/(p - 1).
Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 50, No. 8, pp. 1089–1097, August, 1998. 相似文献
80.
R. G. Makitra G. G. Midyana O. I. Romanyuk E. Ya. Pal’chikova 《Russian Journal of Applied Chemistry》2007,80(6):1002-1006
Swelling of a sulfamide polymer of UPM brand in a series of alcohols was studied gravimetrically. Correlation analysis with multiparameter equations showed that solvation processes exert a decisive effect on the swelling. 相似文献