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21.
N‐(2‐Ethylhexyl)carbazole: A New Fluorophore Highly Suitable as a Monomolecular Liquid Scintillator 下载免费PDF全文
Eva Montbarbon Dr. Fabien Sguerra Dr. Guillaume H. V. Bertrand Élodie Magnier Dr. Romain Coulon Dr. Robert B. Pansu Dr. Matthieu Hamel 《Chemistry (Weinheim an der Bergstrasse, Germany)》2016,22(34):12074-12080
The synthesis, photophysical properties, and applications in scintillation counting of N‐(2‐ethylhexyl)carbazole (EHCz) are reported. This molecule displays all of the required characteristics for an efficient liquid scintillator (emission wavelength, scintillation yield), and can be used without any extra fluorophores. Thus, its scintillation properties are discussed, as well as its fast neutron/gamma discrimination. For the latter application, the material is compared with the traditional liquid scintillator BC‐501 A, and other liquid fluorescent molecules classically used as scintillation solvents, such as xylene, pseudocumene (PC), linear alkylbenzenes (LAB), diisopropylnaphthalene (DIN), 1‐methylnaphthalene (1‐MeNapht), and 4‐isopropylbiphenyl (iPrBiph). For the first time, an excimeric form of a molecule has been advantageously used in scintillation counting. A moderate discrimination between fast neutrons and gamma rays was observed in bulk EHCz, with an apparent neutron/gamma discrimination potential half of that of BC‐501 A. 相似文献
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P. Granet M. Loret L. Mosca J. Saudraix J.C. Scheuer C. Dujardin J. Laurent J. Schlesinger R. Windmolders J.J. Dumoni S. Tavernier F. Verbeure H. Blumenfeld K. Dziunikowska I.V. Ajinenko P.V. Chliapnikov L.N. Guerdyukov B.A. Manyukov O.G. Tchikilev 《Physics letters. [Part B]》1976,62(3):350-352
Elastic scattering of 32.1 GeV/c K+ on protons has been measured in a bubble chamber experiment. Results are presented in the momentum transfer interval 0.06–1.40 GeV2 and compared with data at different energies. An effective Regge trajectory is calculated using K+p elastic data from 10 to 175 GeV/c. 相似文献
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The Lindeman law and a model for the volume dependence of the Grüneisen coefficient generalizing previous current theories are used to calculate the melting curve of aluminum at high pressure. In this model, the Grüneisen coefficient depends on a parameter p specific for the investigated material. Agreement between the calculated melting curve and experimental results involves a negative value of p for aluminum. This result confirms previous determinations of p from shock-wave data and also from the pressure dependance of the elastic moduli determined by ultrasonic measurements. 相似文献
24.
Bel R Behnia K Proust C van der Linden P Maude D Vedeneev SI 《Physical review letters》2004,92(17):177003
We present a study of heat and charge transport in Bi(2+x)Sr(2-x)CuO(6+delta) focused on the size of the low-temperature linear term of the thermal conductivity at optimal-doping level. In the superconducting state, the magnitude of this term implies a d-wave gap with an amplitude close to what has been reported. In the normal state, recovered by the application of a magnetic field, measurement of this term and residual resistivity yields a Lorenz number L=kappa(N)rho(0)/T=1.3+/-0.2L(0). The departure from the value expected by the Wiedemann-Franz law is thus slightly larger than our estimated experimental resolution. 相似文献
25.
The first study of the Nernst effect in NbSe2 reveals a large quasiparticle contribution with a magnitude comparable and a sign opposite to the vortex signal. Comparing the effect of the charge density wave (CDW) transition on Hall and Nernst coefficients, we argue that this large Nernst signal originates from the thermally induced counterflow of electrons and holes and indicates a drastic change in the electron scattering rate in the CDW state. The results provide new input for the debate on the origin of the anomalous Nernst signal in high-T(c) cuprates. 相似文献
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The electronic structure of partially hydrogenated Si(100)- (2 x 1) surfaces, prepared by controlled thermal annealing and nonthermal photon stimulated desorption of fully hydrogenated Si(100) surfaces, has been investigated by using valence band photoemission. Thermal and nonthermal desorption are found to produce very specific electronic surface structures. This led us to the discovery of two specific surface states having binding energies of 1.0 and 0.7 eV associated with the isolated Si dimers and single Si dangling bonds, respectively. 相似文献
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