Effects of a controlled N2 and O2 addition to Ar on the analytical parameters of the GD-OES

The influence of the controlled addition of N₂ and of O₂ to Ar on the analytical parameters of a dc glow discharge has been investigated for bulk samples of the pure metals Al, Ti, Fe, Ni, Cu, and Ag. The constant voltage discharge mode at 1000 V was applied with a mean power of about 1 W/mm². The N₂ and O₂ concentrations in the discharge gas Ar were varied in the range 0–3 mass-%, corresponding to a partial pressure of about 4 · 10^?3 hPa. The general effect of the gaseous addition is the decrease of the sputtering rate with an increasing concentration of N₂ or O₂. Atomic processes, which might be responsible for the observed effects, are discussed.     

Zur Synthese und Struktur von K3N

Synthesis and Structure of K₃N Two phases in the binary system K/N have been obtained via co‐deposition of potassium and nitrogen onto polished sapphire at 77 K and subsequent heating to room temperature. The powder diffraction pattern of one of these phases can be satisfactorily interpreted by assuming the composition K₃N, and the anti‐TiI₃ structure‐type, which is also adopted by Cs₃O. The resulting hexagonal lattice constants are: a = 779.8(2), c = 759.2(9) pm, Z = 2, P6₃/mcm. Comparison with possible structures of K₃N generated by computational methods and refined at Hartree‐Fock‐ and DFT level, reveals that the energetically most favoured structure has not formed (presumable Li₃P‐type), but instead one of those with very low density. In this respect, the findings for K₃N are analogous to the results on Na₃N. The thermal evolution of the deposited starting mixture has been investigated. Hexagonal K₃N transforms to another K/N phase at 233 K. Its XRD can be fully indexed resulting in an orthorhombic cell a = 1163, b = 596, c = 718 pm. Decomposition leaving elemental potassium as the only residue occurs at 263 K.     

Literatur

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