Distinctive field dependence of the longitudinal muon polarization for Mu* in polycrystalline silicon

A distinctive longitudinal magnetic field dependence of the muon polarization for anomalous muonium in polycrystalline semiconductor targets has been predicted. The polarization exhibits a cusp,i.e., a discontinuous jump in the slope from negative to positive. Measurements of the longitudinal polarization for polycrystalline silicon in fields up to 0.5 T, and temperatures 53 and 200 K have been made at LAMPF. A cusp in the field dependence indeed occurs at 0.345 T, in excellent agreement with the prediction. No cusp is observed at 200 K because Mu^* has been thermally ionized.     

Continuous-wave CO2 laser spectroscopy of SF6, WF6, and UF6

The linear absorption of CO₂ laser radiation in SF₆, WF₆, and UF₆ has been measured by using optoacoustic detection techniques. Absolute absorption coefficients per Torr as low as 1 × 10^?7 cm^?1 Torr^?1 in a 2-cm active path length could be measured by taking advantage of calibration measurements performed with SF₆.     

Newton-Cotes integration for approximating Stieltjes (generalized Euler) constants

In the Laurent expansion

of the Riemann-Hurwitz zeta function, the coefficients are known as Stieltjes, or generalized Euler, constants. [When , (the Riemann zeta function), and .] We present a new approach to high-precision approximation of . Plots of our results reveal much structure in the growth of the generalized Euler constants. Our results when for , and when for (for such as 53/100, 1/2, etc.) suggest that published bounds on the growth of the Stieltjes constants can be much improved, and lead to several conjectures. Defining , we conjecture that is attained: for any given , for some (and similarly that, given and , is within of for infinitely many ). In addition we conjecture that satisfies for 1$">. We also conjecture that , a special case of a more general conjecture relating the values of and for . Finally, it is known that for . Using this to define for all real 0$">, we conjecture that for nonintegral , is precisely times the -th (Weyl) fractional derivative at of the entire function . We also conjecture that , now defined for all real arguments 0$">, is smooth. Our numerical method uses Newton-Cotes integration formulae for very high-degree interpolating polynomials; it differs in implementation from, but compares in error bounding to, Euler-Maclaurin summation based methods.

     

A telescope illumination system for a wide-field endoscope

Endoscopic illumination systems conduct light down a built-in fibre-optic bundle to illuminate the object. Many modern endoscopes employ wide-field imaging optical systems and therefore require an illuminating beam of large divergence. This is commonly provided by placing a strong diverging lens at the far end of the fibre bundle, but it results in a poor uniformity of illumination in the object space. This paper describes the design of a telescopic illumination system to overcome this problem.     

Longitudinal relaxation of muonium in Ge and GaAs

Longitudinal-field muon-spin depolarization rates in high-purityGe and semiinsulatingGaAs are reported and compared to similar data for intrinsicSi. Depolarization onset temperatures provide a comparison of charge carrier concentrations leading to rapid charge exchange and a shift in the onset, for n-typeGaAs verifies anelectron process. The temperature dependence of the low-field rate constants imply more complicated dynamics inGe than observed earlier inSi. Features near 750K inGaAsTe appear consistent with dissociation of aMu-Te pair.This work was supported by the US National Science Foundation (DMR-8917639 [TLE, BH]), the Science and Engineering Research Council of the UK (EAD, AS, SFJC), the Robert A. Welch Foundation (D-1053 [RLL], and C-1048 [TLE]), and a NATO Collaborative Research Grant (RLL, SFJC, RCD, CS). We wish to thank D.A. Vanderwater of Hewlett Packard for providing theGaAsTe sample.     

Muon spin resonance and repolarization in amorphous silicon monoxide (a-SiO)

Studies of the muonium fractions in the amorphous oxide a-SiO have been carried out by RF resonance at TRIUMF, Canada and LF repolarization techniques at RAL, U.K. The resonance measurements confirm the presence of the interstitial Mu centre in this intermediate oxide of silicon. Analysis of the data gathered at RAL, using a recently-developed fitting technique, reveals that the Mu^* state is present here as well, but with lower relative fractions than in a-Si. However, as in the latter material, but in contrast to c-Si, this bond-centre species appears to be stable up to room temperature.