Bestimmung von Arsen mittels Atomabsorption

Zusammenfassung Arsen wird mittels Atomabsorptionsspektrometrie bei den Wellenlängen 1890,4 Å und 1972,6 Å bestimmt. Als Absorptionsküvette wird ein Graphitrohr in einer Argonkammer verwendet. Um die in diesem Wellenlängenbereich auftretenden Störungen bei der Absorptionsmessung zu vermindern, wird eine Bezugsintensität bei einer benachbarten Wellenlänge mitgemessen. Dadurch ist es möglich, Arsen in Lösungen in einer Menge bis zu 1 ng oder in einer Konzentration bis zu 0,1 g/ml zu bestimmen.

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Summary Arsenic has been determined with atomic-absorption spectrometry at the wavelengths 1890,4 and 1972,6 Å. A graphite tube in an argon chamber was used as an absorption cell. In order to diminish the fluctuations in absorption measurements in this wavelength region a control intensity was measured at a neighbouring wavelength. By this method it was possible to determine arsenic in a solution in quantities down to 1 ng or in concentrations down to 0.1 g/ml.

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Herrn Prof. Dr. H.Kaiser zum 60. Geburtstag gewidmet.

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Meiner Mitarbeiterin FräuleinErika Schackmann danke ich für sorgfältige Messungen und manche Anregung.     

Photolysis of hexamethyldisilane at 206 nm

The photolysis of Me₆Si₂ at 206 nm results in two main decomposition processes: simple Si---Si bond breaking with a quantum yield of Φ = 0.21 ± 0.03, and Me₃SiH elimination with the concomitant formation of Me₂SiCH₂ with Φ = 0.18 ± 0.01. There is also a minor decomposition channel with a very small quantum yield, Φ = (5.6 ± 0.2) × 10⁻³, which results in the formation of Me₄Si and Me₂Si. The main fate of the excited Me₆Si₂ molecule produced during photolysis is stabilization by collisional deactivation. The end products observed indicate that the reaction pathways followed by the main intermediates, Me₃Si and Me₂SiCH₂, are the same as those found in the photolysis of Me₄Si (Ahmed et al., J. Photochem. Photobiol. A: Chem. 86 (1995) 33).     

Four-wave mixing reflectivity of silicon at 1.06 μm: Influence of free-carrier absorption

The phase-conjugate reflectivity obtainable by degenerate four-wave mixing in silicon at a 1.06 m is calculated including free-carrier absorption. A maximum reflectivity of more than 100% is possible. The dependence of the reflectivity on the signal and pump energy densities up to 70 mJ/cm² is measured and found to agree with theory. The wave-front-correction property of DFWM is demonstrated with a lens in the signal beam.     

Dynamic absorption effects in KrF* amplifiers

The results of transient loss measurements performed in a self-sustained discharge KrF^* amplifier are reported. Analysis of these results gives a minimum value of 20 for the effective gain to loss ratiog ₀/_eff, indicating that efficient extraction of energy in subpicosecond KrF^* amplifiers in the 1 J range should be achievable.