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R.G. Abhilash Kumar K. Vinod U. Syamaprasad 《Applied Physics A: Materials Science & Processing》2007,88(2):243-247
MgB2/Fe wires were prepared by electrical self-heating of in situ powder-in-tube wires for the first time at ambient conditions.
Characterization of the wires processed at 750 °C, 800 °C and 850 °C for 15 min by XRD, SEM, ϱ–T, susceptibility and JC measurements shows that the MgB2 formed is of high quality particularly with respect to phase purity and transport JC. The method considerably reduces the overall energy consumption vis-à-vis the production cost, simplifies the complexity
of the fabrication procedure and is promising for manufacture of high-quality MgB2 superconducting wires.
PACS 74.70.Ad; 74.62.Bf; 74.25.Fy; 74.25.Ha; 81.20.Hy 相似文献
205.
Q. Gong R. N tzel P.J. van Veldhoven T.J. Eijkemans J.H. Wolter 《Journal of Crystal Growth》2005,280(3-4):413-418
We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux. 相似文献
206.
V. V. Lozhkarev S. G. Garanin R. R. Gerke V. N. Ginzburg E. V. Katin A. V. Kirsanov G. A. Luchinin A. N. Mal’shakov M. A. Mart’yanov O. V. Palashov A. K. Poteomkin N. N. Rukavishnikov A. M. Sergeev S. A. Sukharev G. I. Freidman E. A. Khazanov A. V. Charukhchev A. A. Shaikin I. V. Yakovlev 《JETP Letters》2005,82(4):178-180
In experiments on the parametrical amplification of femtosecond pulses in wide-aperture DKDP crystals, a power of more than 100 TW has been reached, which is much higher than the record level achieved in such lasers. The energy efficiency obtained for the parametric amplifier is equal to 27%. The energy of a 72-fs pulse is equal to 10 J. 相似文献
207.
R. Centore P. Riccio S. Fusco A. Carella A. Quatela S. Schutzmann F. Stella F. De Matteis 《Journal of polymer science. Part A, Polymer chemistry》2007,45(13):2719-2725
We have prepared new polyesters containing quadratic, nonlinear optical (NLO) active chromophores covalently incorporated into the main chain. In these polymers, the sequence of the chromophore units along the main chain is rigorously head to tail. All the polyesters are processable, both in the melt and in solution. For one polyester, a full second‐order NLO characterization has been performed. An out‐of‐resonance d33 coefficient of 21 pm/V at 1368 nm has been measured. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2719–2725, 2007 相似文献
208.
Daria E. Lonsdale Geoffrey Johnston‐Hall Amanda Fawcett Craig A. Bell Carl N. Urbani Michael R. Whittaker Michael J. Monteiro 《Journal of polymer science. Part A, Polymer chemistry》2007,45(16):3620-3625
In this work, we propose that retardation in vinyl acetate polymerization rate in the presence of toluene is due to degradative chain transfer. The transfer constant to toluene (Ctrs) determined using the Mayo method is equal to 3.8 × 10?3, which is remarkably similar to the value calculated from the rate data, assuming degradative chain transfer (2.7 × 10?3). Simulations, including chain‐length‐dependent termination, were carried out to compare our degradative chain transfer model with experimental results. The conversion–time profiles showed excellent agreement between experiment and simulation. Good agreement was found for the Mn data as a function of conversion. The experimental and simulation data strongly support the postulate that degradative chain transfer is the dominant kinetic mechanism. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3620–3625, 2007 相似文献
209.
D. Ohlberg J.J. Blackstock R. Ragan S. Kim R. Stanley Williams 《Applied Physics A: Materials Science & Processing》2005,80(6):1327-1334
A recently demonstrated [1] in-vacuo template-stripping process is applied to the study of platinum films stripped from ultra-flat silicon-oxide surfaces. Template-stripped (TS) Pt surfaces, prepared with a range of post-deposition annealing times prior to being stripped from the templating surface in an ultra-high vacuum (UHV) environment, are examined by UHV scanning tunneling microscopy (STM). These studies reveal that without post-deposition annealing, TS Pt surfaces are largely made up of poorly-ordered, granular nanostructures undesirable for many applications. The post-deposition annealing treatments explored in the study result in the emergence and continuous growth of large smooth crystallites. Issues with crystallite orientation relative to the TS surface and artefacts arising as a result of the epoxy used in the template-stripping process are presented and discussed in relation to optimizing the template-stripping procedure for specific applications such as self-assembled monolayer (SAM) formation for molecular electronics. PACS 68.37.Ef; 68.47.De; 68.55.Jk; 81.05.Bx; 81.15.Ef 相似文献
210.