Optimization of Hydrogen‐Evolving Photochemical Molecular Devices

A molecular photocatalyst consisting of a Ru^II photocenter, a tetrapyridophenazine bridging ligand, and a PtX₂ (X=Cl or I) moiety as the catalytic center functions as a stable system for light‐driven hydrogen production. The catalytic activity of this photochemical molecular device (PMD) is significantly enhanced by exchanging the terminal chlorides at the Pt center for iodide ligands. Ultrafast transient absorption spectroscopy shows that the intramolecular photophysics are not affected by this change. Additionally, the general catalytic behavior, that is, instant hydrogen formation, a constant turnover frequency, and stability are maintained. Unlike as observed for the Pd analogue, the presence of excess halide does not affect the hydrogen generation capacity of the PMD. The highly improved catalytic efficiency is explained by an increased electron density at the Pt catalytic center, this is confirmed by DFT studies.     

Determination of the mean energy of backscattered electrons in dependence on the exit angle

A semiconductor detector was used to measure the mean energy of backscattered electrons as a function of the exit angle. New regularities of electron backscattering were found. A nonmonotonic dependence of the mean energy of backscattered electrons on the exit angle and the primary electron energy for materials with different atomic numbers was revealed.     

Mass spectrometric determination of appearance energies for ions formed from CoF(4) and CoF(3) molecules

Knudsen cell mass spectrometry was applied to the evaluation of the ionization efficiency curves for the ions originating from CoF(4) molecules. Cobalt tetrafluoride was obtained in the gas phase over the CoF(3)(s)-TbF(4)(s) system in the temperature range from 640 to 690 K. From the ionization efficiency curves the appearance energies of the ions formed from the CoF(4) molecules were determined by means of Vogt's deconvolution method. Clausius-Clapeyron plots for the ions from CoF(4) molecules were measured. Evaporation of pure CoF(3)(s) was carried out, and the appearance energies of the ions formed from CoF(3) molecules were determined. The ionization energies for CoF(4) and CoF(3) molecules were found to be (14.3 +/- 0.2) and (13.3 +/- 0.1) eV, respectively.     

Beam lifetimes of low-charged ions in storage rings

The beam lifetimes and the charge-changing cross-sections for fast low-charged ions are calculated for the energy range of 1–100 MeV/u and compared with experimental data for Mg¹⁺ and U¹⁰⁺ ions recently measured at SIS GSI, Darmstadt. A moderate agreement of calculations with experiment was obtained. The results show that the heavy components of the residual gas (N₂ and Ar) play a key role for projectile charge-changing processes in the energy range considered. This revised version was published online in July 2006 with corrections to the Cover Date.     

Low Voltage Firing Characteristics of a Simple Triggered Vacuum Gap

The firing characteristics of the simple triggered vacuum gap (TVG) using lead zirconate titanate as dielectric material in the triggered gap are described. This TVG has a long life of about 2000 firings without appreciable deterioration of the electrical properties for main discharge currents upto 3 kA and is much superior to these made with Supramica (Mycalex Corporation of America) and silicon carbide as used in our earlier investigations. The effects of the variation of trigger voltage, trigger curcit, trigger pulse duration, trigger pulse energy, main gap voltage, main gap separation and main circuit energy on the firing characteristics have been studied. Trigger resistance progressively decreases with the number of firings of the trigger gap and as well as of the main gap. This decrease in the trigger resistance is more pronounced for main discharge currents exceeding 10 kA. The minimum trigger current required for reliable firing decreases with increase of trigger voltage upto a threshold value of 1.2 kV and there-onwards saturates at 3.0 A. This value is less than that obtained with Supramica as dielectric material. One hundred percent firing probability of the TVG at main gap voltages as low as 50 V is possible and this low voltage breakdown of the main gap appears to be similar to the breakdown at low pressures between moving plasma by other workers. and the cold electrodes immersed in it, as reported     

Synthese eines verbrückten π-allyl-chinolin-palladiumchlorid-komplexes

Chloro[N-3′5′-η-(4′-methylpentenyl)quinoline-2]palladium was synthesized; the NMR-spectrum of this compound is helpful in distinguishing the cis/trans-isomers of other non-bridged π-allyl-base-palladium chloride complexes.     

Mapping of process-induced dopant redistributions by electron holography.

We present and review dopant mapping examples in semiconductor device structures by electron holography and outline their potential applications for experimental investigation of two-dimensional (2D) dopant diffusion on the nanometer scale. We address the technical challenges of the method when applied to transistor structures with respect to quantification of the results in terms of the 2D p-n junction potential and critically review experimental boundary conditions, accuracy, and potential pitfalls. By obtaining maps of the inner electrostatic potential before and after anneals typically used in device processing, we demonstrate how the "vertical" and "lateral" redistribution of boron during device fabrication can directly be revealed. Such data can be compared with the results of process simulation to extract the fundamental parameters for dopant diffusion in complex device structures.