A family of skew Hadamard difference sets

In 1933 a family of skew Hadamard difference sets was described by Paley using matrix language and was called the Paley-Hadamard difference sets in the literature. During the last 70 years, no new skew Hadamard difference sets were found. It was conjectured that there are no further examples of skew Hadamard difference sets. This conjecture was proved to be true for the cyclic case in 1954, and further progress in favor of this conjecture was made in the past 50 years. However, the conjecture remains open until today. In this paper, we present a family of new perfect nonlinear (also called planar) functions, and construct a family of skew Hadamard difference sets using these perfect nonlinear functions. We show that some of the skew Hadamard difference sets presented in this paper are inequivalent to the Paley-Hadamard difference sets. These new examples of skew Hadamard difference sets discovered 70 years after the Paley construction disprove the longstanding conjecture on skew Hadamard difference sets. The class of new perfect nonlinear functions has applications in cryptography, coding theory, and combinatorics.     

图像的自动采集分析和实现

文章针对焊件检测过程中需大量采集和分析实时图像的要求 ,利用小波分析的特点 ,相关跟踪识别视频图像运动状态 ,实现自动采集、分析处理和储存一并完成 ,解决了视频图像连续捕获不能得到高像质的问题。     

1.54μmEr3+,Yb3+共掺玻璃激光器的速率方程及数值分析

LD抽运共掺Er,Yb玻璃激光器中的跃迁过程较复杂,针对双掺离子之间的能量传递和Er3+的多种跃迁过程,给出了详细的准三能级系统的速率方程,在合理简化后进行了数值分析,分析了Er3+掺杂浓度和介质长度、抽运光斑、输出镜透过率、谐振腔长、抽运光的椭圆度等因素对激光阈值及斜率效率的影响. 关键词： 1.54μm激光 Er3+玻璃 速率方程 数值分析     

长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器     

考虑材料熔化潜热的高温高压本构

本文在修正的SCG模型基础上，提出了一种考虑了熔化潜热的高温高压本构.该本构所给出的铝的剪切模量的变化分为三个阶段：加工硬化，温度软化和熔化，并在完全熔化点处变为零.并且在前两个阶段，计算的结果与修正的SCG模型所给出的剪切模量的差别不超过4%，这一差别是在动高压实验误差范围之内的，在熔化区所给出的剪切模量与现有的实验数据相符合. 关键词： 剪切模量 熔化潜热 修正的SCG模型 动高压实验     

钐(Ⅱ)类卡宾CH_3SmCH_2X(X=Cl、Br和Ⅰ)促进乙烯环丙烷化反应途径的理论研究(英文)

用密度泛函B3LYP方法研究了过渡金属钐类卡宾与乙烯的环丙烷化反应的机理。对三种不同的钐的SS试剂CH_3SmCH_2X(其中X=Cl、Br和Ⅰ)分别和CH_2CH_2反应的各反应物、中间体、过渡态和产物构型的全部结构几何参数进行了优化,用内禀反应坐标(IRC)计算和频率分析方法,对过渡态进行了验证。结果表明：CH_3SmCH_2X(其中X=Cl、Br和Ⅰ)与CH_2CH_2环丙烷化反应按亚甲基转移通道(通道A)和卡宾金属化通道(通道B)都可以进行,与锂类卡宾的反应机理相同,只是按亚甲基转移通道(通道A)进行反应较容易一些,而且此反应在较低的温度下就可以发生。     

偶氮苯衍生物三阶非线性的四波混频研究

用皮秒Ｎｄ：ＹＡＧ激光器的倍频光（５３２ｎｍ）对具有离域π－共轭电子云结构的偶氮苯类样品材料作简并四波混频补给，测得三阶非线性电极化率ｘ＾（３）和它们的时间响应分别为１０＾－９ｅｓｕ和２０ｐｓ，并对影响ｘ＾（３）的瞬时光栅作用和ｘ＾（３）的响应时间人了讨论。     

Equivalent boundary integral equations for plane elasticity

Indirect and direct boundary integral equations equivalent to the original boundary value problem of differential equation of plane elasticity are established rigorously. The unnecessity or deficiency of some customary boundary integral equations is indicated by examples and numerical comparison.     

PIXE analysis of the Mn-doped content in Ga1-xMnxN film grown by LP-MOVPE

Summary Department of Technical Physics, School of Physics, Peking Unive