CARSA,a computer-assisted system for synthesis research in industry

Computer applications in chemical industry are outlined and the CARSA system (computer-assisted research in synthesis and application) is described. This modular system consists of the three main parts: WIFODATA (data base; substance and finding documentation), QSAR (programs for quantitative structure/activity relationships) and RDSS (reaction design by synthon substitution; program package for planning of syntheses). The vital RDSS component is discussed in more detail; the underlying philosophy is explained, and examples are given from practical work. Some future steps towards a real molecular-design system are outlined.     

High facial diastereoselectivity in intra- and intermolecular reactions of chiral benzylic cations

Chiral carbenium ions can be attacked by arene nucleophiles with high facial diastereoselectivity (dr >/= 94/6). Benzylic cations, such as 2, were generated under acidic conditions and reacted with arenes in intra- and intermolecular Friedel-Crafts alkylation reaction. The depicted reaction 1 --> 3 represents one example for the unprecedented, highly diastereoselective intermolecular Friedel-Crafts alkylation reactions which were observed in this study.     

1-Alkoxy-2-azaallenyl-komplexe von chrom und wolfram

The successive reaction of (CO)₆M with Na[NCR₂¹] and [Et₃O]BF₄ yields (CO)₅M[C(NCR₂¹)OEt] (II: M = Cr; III: M = W; CR₂¹ = C(C₆H₄Br-p)₂ (a), CPh₂ (b), C(C₆H₄OMe-p)₂ (c), C(C₆H₄)₂O (d), CBu₂^tt (e)). Hexacarbonyltungsten, (CO)₆W, reacts with Na[NCPh₂] and MeOSO₂F to give (CO)₅W[C(NCPh₂) OMe] (IV). X-Ray analysis of IIe shows that: (1) the CNC fragment is almost linear (171.7°); (2) the two NC bond lengths are equal within experimental error; and (3) the O,C,Cr,N plane is perpendicular to the C(Me₃),C,N,C(Me₃) plane (90.0°). Therefore compounds II–IV are best described as 1-alkoxy-2-azaallenyl complexes.     

Preparation of polycrystalline Ti-Al-O films by magnetron sputtering ion plating: constitution, structure and morphology

Ti-Al-O layers were deposited on Si-<100> wafers at 500 °C by means of reactive magnetron sputtering ion plating (R-MSIP). An Al-target was sputtered in rf-mode and a Ti-target in dc-mode simultaneously by an oxygen/argon plasma. The influence of the Al- and Ti-sputter powers on composition, structure, and morphology of the Ti-Al-O layers and the binding states of the components were investigated. The analysis with EPMA, XPS, AES and TEM yielded the following results: Ti-Al-O coatings with different Ti, Al, and O contents in the range of TiO₂ to Al₂O₃ were grown. TEM structure analysis revealed: the pure TiO₂ film consisted of the tetragonal phases rutile and anatase; the two structures were found in the titanium-rich Ti-Al-O film, too, but with significant smaller lattice constants. The aluminium-rich Ti-Al-O film displayed the same cubic structure of γ-Al₂O₃ as determined for the pure Al₂O₃ film, but the lattice constant is significant lower. Evaluation of the TEM pattern of the film with a Ti/Al ratio of 0.8 indicates a hexagonal structure with lattice constants similar to those of κ′-Al₂O₃. All films are nanocrystalline and not textured. Received: 24 June 1996 / Revised: 27 December 1996 / Accepted: 4 January 1997     

Automatisches Verfahren zur Bestimmung des Bleioxidgehalts von Grauoxid durch Messung der L?sungsw?rme

Zusammenfassung Für das zur Herstellung von Bleibatterien verwendete Grauoxid (bestehend aus einem feinteiligen Gemisch von ca. 60 bis 90% Bleioxid, PbO, und einem Rest metallischem Blei) wurde ein Verfahren zur kontinuierlichen bzw. quasikontinuierlichen, automatischen Bestimmung des PbO-Gehaltes an den Fertigungsanlagen benötigt. Eine schnelle Analyse mit vergleichsweise geringem Aufwand war durch Messung der Lösungswärme bei Behandlung einer abgewogenen Menge Grauoxid mit verd. Essigsäure möglich. Unter technisch bequem realisierbaren Bedingungen wurden Temperaturerhöhungen von einigen Grad erhalten. Der Einfluß verschiedener Arbeitsbedingungen, der verschiedenen PbO-Modifikationen und der Teilchengröße und -form wurde untersucht. Zur Zeit wird eine für die Fertigung bestimmte, automatische Apparatur aufgebaut, die bei einer Analysenfolge von 1 min die Bestimmung mit einer Standardabweichung unter ±1% durchzuführen gestattet.

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Automatic procedure for the determination of the lead oxide content of gray oxides by measurement of the heat of solution

A continuous or semicontinuous automatic method for the determination of the lead oxide content was needed in the manufacturing process of gray oxides (a fine particle mixture of about 60 to 90% lead oxide, PbO, and metallic lead, used in manufacturing lead batteries).A rapid determination with comparatively small effort was possible by measuring the heat of solution of a weighed amount of gray oxides treated with acetic acid. Temperature rise of a few degrees could be reached under technically realisable conditions. The influence of different working conditions, of the particle size and shape and of the PbO modifications were investigated. An automatic apparatus for the determination is at present being built and will give one determination per minute with a standard deviation of less than ±1%.

     

Microstructure and electrical properties of BaTiO<Subscript>3</Subscript> and (Ba,Sr)TiO<Subscript>3</Subscript> ferroelectric thin films on nickel electrodes

Nickel thin films have been sputtered on standard Si/SiO₂ substrates with TiO₂ as an adhesive layer. The thermal stability of these substrates was analyzed. SEM images show an increase in grain size with annealing temperature. They were found to be stable till 800°C, beyond which the nickel layer disintegrated. These substrates were used for deposition of BaTiO₃ and (Ba,Sr)TiO₃ dielectric thin films under a reducing atmosphere. The dielectric thin films were processed with various pyrolysis and annealing temperatures in order to optimize the dielectric properties. Increased pyrolysis temperatures showed an increase in the grain size. Results on these nickelised substrates were finally compared with dielectric films deposited on platinized silicon substrates under identical conditions but crystallized in an oxygen atmosphere.     

Thec logc contribution to the electrolyte conductance and Onsager's reciprocal relation

The differential equations and the boundary conditions for the nonequilibrium binary distribution function of an unsymmetrical binary electrolyte are derived from the Ebeling-Falkenhagen continuity equation. The connection between the Onsager reciprocal relation and the binary distribution functions is shown. Further, Feistel's result for thec logc contribution to the conductance is extended to unsymmetrical binary electrolytes. The reason for the difference between Feistel's and Chen'sc logc term is explained, and the significance of Onsager's reciprocal relation for the calculation ofc logc and higher-concentration contributions of the conductance is discussed.     

Synthesis and selective silylation of ω-hydroxy functionalized (η-alkenyl)carbene complexes of chromium(0) and tungsten(0) Part 11. The chemistry of metallacyclic alkenylcarbene complexes

Tungsten(0) carbene complexes of the type (OC)₅WC(NMeCH₂CHCHCH₂OH)R 2 (R=Me: 2a; R=Ph: 2b) were generated by aminolysis of (OC)₅WC(OMe)R with cis-NHMeCH₂CHCHCH₂OH. Like their Cr-congeners 1, complexes 2 exist at room temperature as mixtures of Z- and E-isomers with regard to the C-N bond. The metallacyclic complexes (OC)₄WC(η²-NMeCH₂CHCHCH₂OH)R (4) were obtained in good yields upon photo-decarbonylation of 2. Deprotonation/silylation of the complexes (OC)₄MC(η²-NMeCH₂CHCHCH₂OH)Me (M=Cr: 3a; M=W: 4a) with one equivalent of ⁿBuLi/Me₃SiCl gave (OC)₄MC(η²-NMeCH₂CHCHCH₂OSiMe₃)CH₃ (M=Cr: 5; M=W: 6), whereas with two equivalents of ⁿBuLi/Me₃SiCl complexes (OC)₄MC(η²-NMeCH₂CHCHCH₂OSiMe₃)CH₂SiMe₃ (M=Cr: 7; M=W: 8) were formed. Hydrolysis of the latter yielded selectively (OC)₄MC(η²-NMeCH₂CHCHCH₂OH)CH₂SiMe₃ (M=Cr: 9; M=W: 10). The complexes 1-10 were analyzed in solution by one- and two-dimensional NMR spectroscopy (¹H, ¹³C, ²⁹Si, ¹H/¹H COSY, ¹H/¹H NOESY, ¹³C/¹H HETCOR).     

Cis‐trans Isomerism in Copper(II) Complexes with N‐acyl Thiourea Ligands

The N‐acyl thiourea complexes bis[N,N‐diethyl‐N′‐(p‐nitrobenzoyl)‐thioureato]copper(II) ( 1a,1b ) and bis(N,N‐diphenyl‐N′‐benzoylthioureato)copper(II) ( 2a,2b ) crystallize in each case in two modifications. X‐ray structural analysis shows that 1a and 1b are cis‐trans isomers. This is very unusual for N‐acyl thioureato complexes because with exception of one platinum(II) complex up to now only cis complexes have been found. In contrast X‐ray structural analysis of both forms 2a and 2b of the other complex shows no cis‐trans pair. Both modifications are cis complexes. In solution both isomers of the copper(II) complexes are observable by EPR spectroscopy.     

Infrared spectroscopic characterization of the buried interface and surfaces of bonded silicon wafers

Basic investigations have been carried out on the characterization of different processing steps in bond preparation using etched <111> faces of silicon wafers for the incidence of the infrared beam to a multiple internal reflection geometry. The method is very sensitive to the surface coverage and interface. Surface activation by RCA cleaning yields an increase of water coverage and a decrease of SiH and CH groups. The detection limit for an oxide layer between silicon wafers has been found to be about 3 nm. Received: 18 July 1997 / Revised: 15 August 1997 / Accepted: 19 August 1997