(Higgs)2, 3 quantum fields in a finite volume

This is the third paper of a series, and contains a proof of the bounds on the effective actions needed in the two previous papers. The proof is based on perturbative analysis of renormalization.     

Optical and microstructural properties of self-assembled InAs quantum structures in silicon

The InAs quantum structures were formed in silicon by sequential ion implantation and subsequent thermal annealing. Two kinds of crystalline InAs nanostructures were successfully synthesized: nanodots (NDs) and nanopyramids (NPs). The peaks at 215 and 235 cm^?1, corresponding to the transverse optical (TO) and longitudinal optical (LO) InAs single-phonon modes, respectively, are clearly visible in the Raman spectra. Moreover, the PL band at around 1.3 µm, due to light emission from InAs NDs with an average diameter 7±2 nm, was observed. The InAs NPs were found only in samples annealed for 20 ms at temperatures ranging from 1000 up to 1200°C. The crystallinity and pyramidal shape of InAs quantum structures were confirmed by HRTEM and XRD techniques. The average size of the NPs is 50 nm base and 50 nm height, and they are oriented parallel to the Si (001) planes. The lattice parameter of the NPs increases from 6.051 to 6.055 Å with the annealing temperature increasing from 1100 to 1200°C, due to lattice relaxation. Energy dispersive spectroscopy (EDS) shows almost stoichiometric composition of the InAs NPs.     

Fundamental Problems in the Unification of Physics

We discuss the following problems, plaguing the present search for the “final theory”: (1) How to find a mathematical structure rich enough to be suitably approximated by the mathematical structures of general relativity and quantum mechanics? (2) How to reconcile nonlocal phenomena of quantum mechanics with time honored causality and reality postulates? (3) Does the collapse of the wave function contain some hints concerning the future quantum gravity theory? (4) It seems that the final theory cannot avoid the problem of dynamics, and consequently the problem of time. What kind of time, if this theory is supposed to be background free? (5) Will the dynamics of the “final theory” be probabilistic? Quantum probability exhibits some essential differences as compared with classical probability; are they but variations of some more general probabilistic measure theory? (6) Do we need a radically new interpretation of quantum mechanics, or rather an entirely new theory of which the present quantum mechanics is an approximation? (7) If the final theory is to be background free, it should provide a mechanism of space-time generation. Should we try to explain not only the generation of space-time, but also the generation of its material content? (8) As far as the existence of the initial singularity is concerned, one usually expects either “yes” or “not” answers from the final theory. However, if the mathematical structure of the future theory is supposed to be truly more general that the mathematical structures of the present general relativity and quantum mechanics, is a “third answer“ possible? Could this third answer be related to the probabilistic character of the final theory? We discuss these questions in the framework of a working model unifying gravity and quanta. The analysis reveals unexpected aspects of these rather wildly discussed issues.     

Crystal microstructure of annealed nanocrystalline Chromium studied by synchrotron radiation diffraction

The microstructure of electrodeposited nanocrystalline chromium (n-Cr) was studied by using synchrotron radiation (SR) diffraction, SEM, TEM, and EDX techniques. The as-prepared n-Cr samples show the standard bcc crystal structure of Cr with volume-averaged column lengths varying from 25 to 30 nm. The grain growth kinetics and the oxidation kinetics were studied by time resolved SR diffraction measurements with n-Cr samples annealed at 400, 600, and 800 °C. The grain growth process is relatively fast and it occurs within the first 10 min of annealing. The final crystallite size depends only on the annealing temperature and not on the initial grain size or on the oxygen content. The final volume-averaged column lengths observed after 50 min annealing are 40(4), 80(1), and 120(2) nm for temperatures 400, 600, and 800 °C, respectively. It is shown that annealing ex situ of n-Cr at 800 °C both under vacuum and in air gives a grain growth process with the same final crystallite sizes. The formation of the Cr₂O₃ and CrH phases is observed during annealing.     

Black hole uniqueness from a hidden symmetry of Einstein's gravity

A theorem is proven that the only possible exterior solution for a pseudostationary, rotating, electrovacuum black hole with nondegenerate event horizon is the Kerr-Newman solution withM ²-J²/M²-Q²>0. A special role played in the proof of this theorem by the hidden symmetry groupSU(1, 2) of Einstein's equations is established.This essay received the third award from the Gravity Research Foundation for the year 1983 [Ed.].     

Uniqueness and the global Markov property for Euclidean fields: The case of general exponential interaction

The uniqueness and the global Markov property for the regular Gibbs measure corresponding to the interaction $$U_\Lambda (\varphi ): = \lambda \int\limits_\Lambda {d_2 x\int {d\varrho (\alpha ):e^{\alpha \varphi } :_0 (x)} } $$ [forλ>0,d?(α) a probability measure with support in \(( - 2\sqrt {\pi ,} 2\sqrt \pi )\) ] is proved.     

Scattering of electrons by charged dislocations in InSb-type semiconductors

Electron scattering by parallel arrays of charged dislocations in InSb-type semiconductors is considered. In the theoretical approach the nonparabolic structure of the conduction band of the semiconductors considered is taken into account in the approximation of a simplified Kane's band model. The effect of screening by free electrons of the dislocation charge is also included in the theory. The calculated relaxation time of the electrons is used to derive a formula for the dislocation-limited electron mobility in the semiconductors. Some examples of calculations of the charged dislocation-limited mobility as a function of the electron concentration with the dislocation density as a parameter are given for n-InSb at 77 K and 300 K. The ratio of the magnitudes of the charged dislocation-limited mobility to the ionized impurity-limited mobility in n-type material at low temperatures is also discussed.     

Ultrasonic system for accurate distance measurement in the air

This paper presents a system that accurately measures the distance travelled by ultrasound waves through the air. The simple design of the system and its obtained accuracy provide a tool for non-contact distance measurements required in the laser’s optical system that investigates the surface of the eyeball.