聚合物微腔的研制及其特性分析

采用ＢＭＰＰＶ：ＰＶＫ的混合物作国源介质，将其按一定比例溶于氯仿中，并旋涂在具有９９．５％的反射率的ＤＢＲ上，其上蒸发３００ｎｍ的银膜，形成了面发射型微腔结构，其中ＤＢＲ在入射腔面，银膜为反射腔面，在激发波长３３７．１ｎｍ，频率２０Ｈｚ脉宽１０ｎｓ的氮分子激光器泵浦下，光谱明显等窄化，出现４６０ｎｍ和５３０ｎｍ两个比较强的发光峰，主峰国４６０ｎｍ半宽度为７ｎｍ。     

碱金属原子双光子共振的能级与光谱

双光子共振增强了碱金属原子的非线性极化率，可以观测到多种非线性光学过程产生的非线性光谱，本文分析了有关的能级分布和光谱特点。     

保护介质对爆轰固相产物生成的影响

 通过爆轰合成超细金刚石实验，对装药在不同环境下引爆后得到的固相碳产物进行比较分析，研究不同介质如氮气、水、冰、遇热分解的盐等对爆轰产物中固相碳形成的影响，同时提出用石墨化程度来比较这种影响。结果显示，介质对爆轰产物中固相碳的石墨化和超细金刚石的保护有着重要的作用。几种介质中水的保护效果较好。     

分布耦合系数对线性啁啾光栅色散的影响

本文从光栅反向耦合波方程出发,经相位共轭变换用Runge-Kuta-Gil方法对其数值求解。针对线性啁啾光栅耦合系数变化服从不同的分布,分析了各种分布对光栅反射谱特性和色散特性的影响。     

PINNING EFFECT OF LEAD LANTHANUM TITANATE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES

Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO₃ thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO₃ would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO₃/Si was very low and the pinning effect was hardly observed.     

On Possible Sources of Heavy Neutral Particles in Cosmic Rays

We explore some possible mechanisms by which the heavy neutral cosmic particles are accelerated to gain sufficiently high kinetic energies and cause observable effects at detectors on the earth. Our results indicate that all the known sources which are based on the established theories and observations fail to give rise to very high energy with sizable flux intensity. If the heavy neutral particles of kinetic energies of GeV order indeed exist in cosmic rays, there must be certain mechanisms beyond our present knowledge of dark matter and universe evolution.     

Discrete Green's Function for Lattice Random Walk

１　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｏｐｔｉｃａｌｔｏｍｏｇｒａｐｈｙｐｒｏｖｉｄｅｓａｎａｌｔｅｒｎａｔｉｖｅｔｅｃｈｎｏｌｏｇｙｔｏｐｒｏｂｅｂｒｅａｓｔｃａｎｃｅｒａｎｄｍｏｎｉｔｏｒｈｕｍａｎｔｉｓｓｕｅ’ｓｆｕｎｃｔｉｏｎａｌｐａｒａｍｅｔｅｒｎｏｎｉｎｖａｓｉｖｅｌｙ［１,２］．Ｐｈｏｔｏｎｍｉｇｒａｔｉｏｎｉｎｔｉｓｓｕｅｐｌａｙｓａｋｅｙｒｏｌｅｉｎｏｐｔｉｃａｌｔｏｍｏｇｒａｐｈｙ．Ｒｅｃｅｎｔｌｙ,ａｌａｔｔｉｃｅｒａｎｄｏｍｗａｌｋｍｏｄｅｌ［３,４］ｉｓｅｍｐｌｏｙｅｄｔｏｄ…     

在岛津ICPQ-1000光谱仪上使用HG-3B型氢化物发生器

本文用岛津ＩＣＰＱ－１０００型光谱仪,并且使用了ＨＧ－３Ｂ氢化物发生器,这种发生器利用ＩＣＰ载气的压力产生的负压,自动吸入试样和ＮａＢＨ４溶液并发生氢化反应,生成的气态氢化物进入ＩＣＰ火炬并被激发。使用这种氢化物发生器同时测定了Ａｓ,Ｓｂ,Ｓｅ,Ｂｉ等４种元素,其检出限与常规气动喷雾器在比较至少降低了一个数量级。     

SIZE AND SHAPE DEPENDENCE OF THE LOWEST CONDUCTION BAND STATES IN GaAs QUANTUM DOTS

Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of dlrect/indirect transition in GaAs quantum wires and thin films.