Stochastic complete continuity property of operators connected with a Wiener process

We study properties of some linear and nonlinear operators which occur in the theory of stochastic differential and integral equations.Translated from Statisticheskie Metody Otsenivaniya i Proverki Gipotez, pp. 148–154, 1988.     

A method for computing the IR radiation of molecular gas jets in the volume approximation

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 3, pp. 478–484, September, 1991.     

Rb saturation spectroscopy with an optically narrowed FM diode laser

A fast-frequency modulated (FM) diode laser has been optically narrowed using the technique of resonant optical feedback, to provide linewidths in each FM mode of ≈ 200 kHz peak-to-peak. With a drive frequency of 50 MHz and modulation index of 0.2, the FM laser has been used for the first time to obtain Doppler-free FM spectra of the Rb D₁ line at 795 nm. The potential use of this system for laser frequency stabilisation is discussed.     

Thermal emission spectrum from a semiconductor electron-hole plasma

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 624–629, October, 1991.     

Diffraction in a nonlinear defocusing medium

Diffraction by a semitransparent screen is considered in the framework of the nonlinear Schrödinger equation. The case of a defocusing medium is investigated. The method used represents a synthesis of the method of Riemann's matrix problem and the technique of Whitham's deformations of spectral curves.Translated from Zapiski Nauchnykh Seminarov Leningradskogo Otdeleniya Matematicheskogo Instituta im. V. A. Steklova, Vol. 179, pp. 23–31, 1989.     

Stress concentration in a three-layer plate with two cylindrical cavities

The stressed state of a thick three-layer plate with two circular holes is studied. Resolving functions are expressed in terms of Kolosov-Muskhelishvili integral potentials and modified Bessel functions. The problem is reduced to solving an infinite set of linear algebraic equations.Translated from Teoreticheskaya i Prikladnaya Mekhanika, No. 18, pp. 25–28, 1987.     

The Implications of Cognitive-style Findings for Operational Research

Cognitive style refers to differences that can be perceived in individuals due to differing cognitive structures. There has been a large amount of research on how cognitive style affects managerial decision-making, particularly in the context of management information systems, but little or no attempt to relate these findings to operational research. This paper reviews the findings of cognitive-style research from the perspective of operational research, and draws a number of useful inferences concerning the matching of OR aids to managers, the presentation of information and recommendations, the use and acceptance of OR, and the structure of OR groups. Further, it is argued that cognitive-style findings help to give a justification to the move towards ‘soft’ approaches to analysis.     

The Barnett approximation in the theory of hydrodynamic fluctuations

The Langevin dynamics and fluctuational-dissipative relationships for the hydrodynamic fluctuations for systems which are described in the third Barnett order with respect to the gradients of the hydrodynamic variables are generalized on the basis of a kinetic approach.     

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Book reviews

     

Electron traps and positive DLTS signals in VPE GaAs MESFETs

Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.