Phase modulation of the signal beam in three-wave forward mixing in photorefractive bismuth silicon oxide

The interaction of three forward beams in a BSO crystal is investigated under conditions when the two pump beams are anti-symmetrically detuned and the signal beam is phase modulated. For sinusoidal phase modulation the signal gain is shown to be dependent on the instantaneous frequency detuning. Single and double maxima in gain are obtained depending on the voltage amplitude applied to the piezoelectric mirror. For triangular phase modulation a slight asymmetry is found in the gain versus detuning curve.     

A model for a uniform steady-state vacuum arc with a hot anode

A model is formulated and evaluated for a Uniform electrical discharge sustained in vapor evaporated from an arc-heated anode. The plasma potential is positive with respect to both the cathode and anode. For a Cu anode, the anodic vapor dominates the plasma for current densities exceeding 8 kA/m². The anode heating potential is approximately 6.5 V, and the dominant cooling mechanism is evaporation for current densities exceeding 20 kA/m². Over the range 10 to 10000 kA/m², the electron density increases from 8×10¹⁷ to 5×10²³ m^-3, while the ionization fraction rises from 0.3% to 4%. At the lower end of this current range the electrical resistivity of 4 mΩ-m is determined primarily by electron-neutral collisions, while with increasing current the resistivity decreases to 0.7 mΩ-m, with electron-ion collisions contributing an equal share. This hot-anode vacuum arc may have potential for industrial application as a macroparticle-free high-deposition-rate coating source     

Sequential nonlinear estimation with nonaugmented priors

How can the basic compatibility of theory and observations be investigated for nonlinear processes without requiring stochastic characterizations for residual error terms? The present paper proposes a flexible least-cost approach. For each possible estimatex for the sequence of process states, letc _D (x) andx _M(x) denote the costs incurred for deviations away from the prior dynamic specifications and prior measurement specifications, respectively. Define the cost-efficiency frontier to be the greatest lower bound for the set of all possible cost pairs [c _D (x),c _M(x)], conditional on the given observations. State sequence estimatesx that attain the cost-efficiency frontier indicate the possible ways that the actual process could have developed over time in a manner minimally incompatible with the prior dynamic and measurement specifications. An algorithm is developed for the exact sequential updating of the cost-efficient state sequence estimates as the duration of the process increases and additional observations are obtained.     

Growth kinetics of iron boride layers: Dimensional analysis

Dimensional analysis is presented as a powerful tool in the study of the paste boriding process. In particular, a dimensional method is used to study the growth kinetics of the boride layers FeB and Fe₂B. Experiments were performed in AISI 1045 steel and AISI M2 steel, to test the suggested model. Samples of 1045 steel were prepared and treated using boron paste thickness of 3-5 mm, at temperatures of 1193, 1223 and 1273 K, with 2, 4 and 6 h of treatment time. The M2 specimens had boron paste thickness of 3 and 4 mm and temperatures of 1223, 1253 and 1273 K for 2 and 6 h. Results indicate that the growth of boron layers obeys power laws of the form y = αx^β, where α and β constants are a function of the material and the interface of interest. Validation of the model was carried out using experimental data with an average error percentage of 7.6% for Fe₂B in 1045 steel, 15.8% for FeB and 3.4% for Fe₂B in M2 steel.     

Slow positron beam study of corrosion-related defects in pure iron

Corrosion-related defects of pure iron were investigated by measuring Doppler broadening energy spectra (DBES) of positron annihilation and positron annihilation lifetime (PAL). Defect profiles of the S-parameter from DBES as a function of positron incident energy up to 30 keV (i.e. ∼1 μm depth) were analyzed. The DBES data show that S-parameter increases as a function of positron incident energy (mean depth) after corrosion, and the increase in the S-parameter is larger near the surface than in the bulk due to corrosion. Furthermore, information on defect size from PAL data as a function of positron incident energy up to 10 keV (i.e. ∼0.2 μm depth) was analyzed. In the two-state trapping model, the lifetime τ₂ = 500 ps is ascribed to annihilation of positrons in voids with a size of the order of nanometer. τ₁, which decreases with depth from the surface to the bulk, is ascribed to the annihilation of positrons in dislocations and three-dimensional vacancy clusters. The corroded samples show a significant increase in τ₁ and the intensity I₂, and near the surface the corroded iron introduces both voids and large-size three-dimensional vacancy clusters. The size of vacancy clusters decreases with depth.     

Many-body effects in diffusion-limited kinetics

We review a novel approach to treating many-body effects in diffusion-limited kinetics. The derivation of the general expression for the survival probability of a Brownian particle in the presence of randomly distributed traps is given. The reduction of this expression to both the Smoluchowski solultion and the wellknown asymptotic behavior is demonstrated. It is shown that the Smoluchowski solution gives a lower bound for the particle survival probability. The correction to the Smoluchowski solution which takes into account the particle death slowdown in the initial process stage is described. The steady-state rate-constant concentration dependence and the reflection of many-body effects in it are discussed in detail.     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen