Surface photovoltage measurement in MOS structures

A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E _t ¹ = E_v + 0.25 eV and E _t ² = E_c – 0.30 eV in the oxide-silicon interface of the investigated structures had been found.     

Beryllium diffusion across GaAs/(Al,Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth

Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration profiling, in conjunction with transmission electron microscopy. Diffusion times were comparatively short since they were limited to part of the growth sequence, so non-equilibrium effects had a significant influence. The results are consistent with an interstitial-substitutional mechanism in which lattice site incorporation becomes more difficult with increasing band gap enthalpy. Incorporation involves a kick-out reaction which leads to the observed disordering of the superlattices.     

Selecting the duration of excitation pulses for an electroluminescent thin-film matrix

The factors influencing the optimum selection of the excitation pulse width of thin-film electroluminescent devices is examined. It is shown that to excite an individual cell, a pulse width of 5–7 sec is sufficient, but to excite the matrix, the pulse width is determined by the independence of the conducting layer and the dimensions of the matrix. Formulas are cited for engineering calculations of the required pulse width.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 59–62, December, 1987.     

Electron emission from Al,Pt, Ag,and Au surfaces under the action of resonant photons with λ=2537 and 1850 Å

An original variant of an electronic device is described, which can be used for gamma-process selection under ionized gas conditions. The device is based on a Hanley and Schaffernicht electron gun. Selection of photons and metastable atoms is performed by a quartz tube located in axial symmetry with the primary electron gun. The desired signal is measured from the flow of secondary electrons emitted from Al, Pt, Ag, and Au surfaces under the action of resonant photons radiated from the levels Hg(6³P₁) and Hg(6¹P₁). For =2537 Å the following values were obtained for _ph 9.1, 3.8, 1.1, 0.25. Analogous values of _ph for =1850 Å were equal to 45.5, 10.8, 6.5, 3.2. The _ph values are in units of 10^–4.Translated from Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 68–74, December, 1987.     

Self-activated luminescence of zinc sulfide

The nature of the luminescence of zinc sulfide in the spectral range (360), 380–420 nm (SAL) at 80K is analyzed. It is shown that the appearance of SAL radiation is accompanied by additional absorption in the region (350) 365–370 nm at 80K. The low-temperature spectra of sphalerite, exposed to different radiation and subjected to different treatment, are studied. The multiband luminescence of the isoelectronic sulfur impurity in ZnO deposits in the region 383–640 nm is discussed. It is concluded that SAL luminescence is attributable to the localization of excitons in ZnS on clusters, whose formation precedes the precipitation of the ZnO·S phase. The formation of oxygen clusters and deposits on dislocations in ZnS is studied.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 60–66, February, 1987.     

Particle creation by a black hole as a consequence of the Casimir effect

Particle creation by a black hole is investigated in terms of temperature corrections to the Casimir effect. The reduction of the Hawking effect to more familiar effects observed in the laboratory enables us to reveal the mechanism of particle creation. The blackbody nature of the Hawking radiation is due to the interaction of virtual particles with the surface of a cavity formed by the Schwarzschild gravitational field potential barrier. These particles are squeezed out by the contraction of the potential barrier and appear to an observer atJ ⁺ as the real blackbody ones.     

Two-photon absorption and energy band structure of orthorhombic Hg2Cl2 crystals

Dependence of two-photon absorption (TPA) rate on the state of polarization of a laser beam is investigated in the low-temperature orthorhombic modification of Hg₂Cl₂ crystals. Theoretical calculations of the dependence of TPA rate on the direction of polarization vector of the beam are performed for centrosymmetric points, Y, Z, T, R andS of the Brillouin zone. The domain structure of real crystals is taken into consideration and it is shown that periodicity of the polarization dependence may indicate whether TPA is due to transitions either at, Y, Z, T orR, S points. The polarization dependence of TPA cannot, however, distinguish between points inside these two groups. Comparison of theory with a low-temperature (T 8·5 K) experimental curve of polarization dependence is discussed. It is shown that the experiment can be explained in main features by a model of noninteracting oriented linear dipoles. Further, on the basis of TPA measurements, a simple energy band structure of Hg₂Cl₂ is proposed regarding Hg₂Cl₂ crystal as a linear chain of molecules.The authors express thanks to Dr. . Barta for supplying the Hg₂Cl₂ crystals, Dr. Z. Bryknar for critical comments and Dr. B. Velický for stimulating discussion. We thank also Dr. V. Kohlová for assistance during measurement.     

N2 production in e-beam pumped XeF lasers containing NF3

The rate of build-up of N₂ was measured in electron-beam-irradiated Ne/Xe/NF₃ mixtures using mass spectroscopy. the amount of N₂ produced indicated that N₂ is the primary nitrogen bearing stable species created in these mixtures. The rate constant for dissociative electron attachment to the NF₂ fragments produced in electron attachment to NF₃ is estimated to be 5×10^–8 cm³/s in order to explain the amount of N₂ produced.This work was supported by DARPA under Contract No. DAA01-82-C-A125 and monitored by MICOM