全内反射荧光显微术应用于单分子荧光的纵向成像

利用这种显微术中激发场的纵向强度呈指数衰减的分布特性，测得的荧光强 度将强烈依赖渗透深度（强度衰减到1/e时的距离），从而快速直接的确定单分子荧光 团间的纵向间隔、每个荧光团的纵向绝对位置和荧光团的半径大小，即实现荧光分子三维分 布的重构.在整个重构的过程中，只需要改变一次入射角的大小，即只需探测两幅荧光分子 的全内反射成像. 关键词： 全内反射荧光显微术 纵向重构     

What Oxidation State of Iron Determines the Amethyst Colour?

A colourless quartz crystal doped with ⁵⁷Fe³⁺ was obtained by hydrothermal synthesis in an NH₄F solution. The crystal was transformed into violet amethyst by gamma-irradiation. The change in colour was accompanied by changes in the Mössbauer spectrum that can be interpreted as the conversion of trivalent iron into the tetravalent state: Fe³⁺→Fe⁴⁺.

     

Die Bestimmung des Harzes in Seifen und Fetten

Ohne Zusammenfassung     

Lein?l, Lein?lfirniss und Oelfarben

Ohne Zusammenfassung     

Two-photon interference spectra at the sum-frequency generation of a bichromatic field interacting with a three-level atom

We have calculated the spectral functions for a number of induced excitations near the sum-frequency generation of a bichromatic field interacting with a three-level atom in the cascade configuration. Although the two-photon spontaneous emission is electric dipole forbidden, there are induced peaks whose subnatural line widths and spectral heights depend on the intensities of the bichromatic field. At low intensities of both laser fields, the maximum heights of the induced peaks take positive, zero, and negative values, indicating that the physical processes of absorption (attenuation), dark resonance (nonabsorbing state), and stimulated emission (amplification) are likely to occur at the sum-frequency generation of the two laser fields, respectively. The derived results are graphically presented and discussed. PACS 32.80.-t; 42.50.Hz     

The mechanism of emission in the red photoluminescence band of porous silicon

Porous silicon (PS) exhibits several photoluminescence (PL) bands, whose spectral position and intensity depend strongly on the actual conditions of preparation of PS, its treatment, and subsequent use. The PS PL band peaking at about 1.8 eV and usually assigned to the intrinsic emission of silicon nanocrystals was studied. It was shown that the temperature-induced variation of the PL kinetics in the 80 to 300-K interval follows a complex pattern and depends noticeably on the actual point on the band profile. The temperature behavior of PL decay in the 1.8-eV band is determined by the electron-hole recombination rate within a nanocrystal and the cascade carrier transitions from small to large nanocrystals, with an attendant decrease in energy.     

Investigations of low- and high-spin states of <Superscript>132</Superscript>La

The fusion evaporation reaction ¹²²Sn(¹⁴N, 4n)¹³²La was used to populate the high-spin states of ¹³²La at the beam energy of 60 MeV. A new band consisting of mostly E2 transitions has been discovered. This band has the interesting links to the ground state 2^- and the isomeric state 6^-. A new transition of energy 351 keV connecting the low-spin states of the positive-parity band based on the πh _11/2 ⊗ νh _11/2 particle configuration, has been found. This has played a very important role in resolving the existing ambiguities and inconsistencies in the spin assignment of the band head. Received: 12 August 2002 / Accepted: 18 March 2003 / Published online: 7 May 2003