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81.
82.
83.
We describe a new algorithm which uses the trajectories of a discrete dynamical system to sample the domain of an unconstrained objective function in search of global minima. The algorithm is unusually adept at avoiding nonoptimal local minima and successfully converging to a global minimum. Trajectories generated by the algorithm for objective functions with many local minima exhibit chaotic behavior, in the sense that they are extremely sensitive to changes in initial conditions and system parameters. In this context, chaos seems to have a beneficial effect: failure to converge to a global minimum from a given initial point can often be rectified by making arbitrarily small changes in the system parameters. 相似文献
84.
85.
The diffraction of plane surface gravitational waves by the edge of an ice cover lying on the surface of an incompressible fluid of infinitely great depth is considered. The ice cover is simulated by a thin elastic plate. The wave reflection and transmission coefficients are determined when it interacts with the ice cover. A wave field is constructed in the fluid under the conditions that a periodic lumped force and a lumped moment act on the edge of the ice cover. It is shown that as the incident wavelength increases the reflection coefficient tends to zero and the transmission coefficient tends to unity. 相似文献
86.
The general structure of the pureSU(2) gauge potentials is calculated in detail. It is shown that the expansion of the gauge potentials about nonvanishing pure gauge potentials gives rise to new effects with confinement character. 相似文献
87.
88.
N. S. Simonović 《Few-Body Systems》2006,38(2-4):139-145
In agreement with the Kohn theorem the relative motion (rel) of three electrons in a two-dimensional parabolic trap separates
from the centre-of-mass (CM) motion. By introducing new coordinates the Hamiltonian for relative motion in the approximation
of non-interacting electrons can be taken to the normal form. The eigenstates of the normalized Hamiltonian are products of
the Fock-Darwin states for normal modes. The energy levels for relative motion are obtained by diagonalizing the exact Hamiltonian
in the eigenbasis for the non-interacting case. In this basis the interaction matrix elements can be obtained in the analytical
form. Since the rank of the Hamiltonian matrix is significantly reduced, the calculations are faster and more accurate than
those for the full (CM + rel) motion. This advantage is especially important for the calculations of excited states and the
analysis of energy spectra. 相似文献
89.
On Quantum Team Games 总被引:2,自引:0,他引:2
E. Ahmed M. F. Elettreby A. S. Hegazi 《International Journal of Theoretical Physics》2006,45(5):880-886
Recently Liu and Simaan (2004) convex static multi-team classical games have been introduced. Here they are generalized to both nonconvex, dynamic and quantum games. Puu's incomplete information dynamical systems are modified and applied to Cournot team game. The replicator dynamics of the quantum prisoner's dilemma game is also studied. 相似文献
90.
V. Edon M.C. Hugon B. Agius L. Miotti C. Radtke F. Tatsch J.J. Ganem I. Trimaille I.J.R. Baumvol 《Applied Physics A: Materials Science & Processing》2006,83(2):289-293
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and
gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford
backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in
better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result
is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime.
PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc 相似文献