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961.
Using ultra-high vacuum scanning tunneling microscopy (UHV-STM), we show that copper-phthalocyanine (CuPc) grows in a well ordered manner on hydrogen passivated vicinal silicon surfaces. CuPc grows one-dimensionally parallel to the monatomic steps on the vicinal silicon surface. Surprisingly, elongated clusters of the CuPc parallel to the step directions are formed even on the middle of the terraces well away from the step edges. The one-dimensional growth mode continues even after the full monolayer coverage on the substrate which results in strongly oriented growth mode of a thin film of CuPc on the vicinal silicon surfaces. 相似文献
962.
H. Kim R.C.Y. Auyeung M. Ollinger G.P. Kushto Z.H. Kafafi A. Piqué 《Applied Physics A: Materials Science & Processing》2006,83(1):73-76
Low-temperature laser sintering has been successfully demonstrated to improve the overall conversion efficiency of dye-sensitized solar cells. Mesoporous TiO2 electrodes were prepared from a colloidal solution of TiO2 nanopowders by a laser direct-write technique and then sintered by a quasi-continuous-wave UV laser (λ=355 nm) for the fabrication of dye-sensitized solar cells. The overall conversion efficiency of the cells based on the laser-sintered TiO2 electrodes was double that of the devices with non-laser-treated TiO2 electrodes. This enhancement is attributed to both the removal of organic additives and the improved inter-nanoparticle electrical contacts induced by the laser-sintering process, which led to an increase in porosity and dye-absorption sites in the TiO2 electrodes. PACS 61.80.Ba; 61.46.+w; 73.22.-f; 84.60.Jt 相似文献
963.
In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 °C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 °C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering. 相似文献
964.
The electro-optic response of ferroelectric smectic C* liquid crystals has been studied. Anomalous switching behaviour of such materials which possess a negative dielectric anisotropy has been reported. These materials show a minimum in response time at a sufficiently high field. We present results showing the dependency of this minimum upon spontaneous polarisation and the effect of AC bias. Calculations based upon the equation of motion of the director around the cone are presented which describe this effect and its dependence on the relative magnitudes of the spontaneous polarization and dielectric anisotropy of the material. Good agreement with the experimental results is found. 相似文献
965.
We have characterized multidielectric scaled SONOS nonvolatile memory structures with the quasi-static linear voltage ramp (LVR) technique and dynamic pulse measurements. We have formulated physically-based ERASE/WRITE and retention methods with deep level amphoteric traps which capture and emit carriers to the bands in the silicon nitride film. Amphoteric trap parameters are extracted by the LVR technique. ERASE/WRITE and retention amphoteric trap model simulations agree well with the experimental dynamic pulse measurements. Experimental scaled SONOS structures have been fabricated with tunnel oxide XOT=20 Å, nitride XN=30 Å and blocking oxide XOB=55 Å and demonstrated a static flatband shift of 3.6 V with ±5 V programming voltages. These structures may be used as the nonvolatile memory element in high density VLSI circuits. 相似文献
966.
967.
G.J. Zalmai Qing-hong Zhang 《应用数学学报(英文版)》2007,23(2):217-234
In this paper,we discuss a large number of sets of global parametric sufficient optimality condi-tions under various gcneralized (η,ρ)-invexity assumptions for a semi-infinite minmax fractional programmingproblem. 相似文献
968.
969.
R. G. Makitra G. G. Midyana E. Ya. Pal’chikova 《Russian Journal of Applied Chemistry》2006,79(1):43-49
The influence of physicochemical properties of organic solvents on the distribution constants of aromatic carboxylic acids between the organic and aqueous phases was examined. 相似文献
970.
M. R. Darafsheh N. S. Karamzadeh A. R. Moghaddamfar 《Journal of Applied Mathematics and Computing》2006,21(1-2):437-450
IfG is a finite group, we define its prime graph Г(G), as follows: its vertices are the primes dividing the order ofG and two verticesp, q are joined by an edge, if there is an element inG of orderpq. We denote the set of all the connected components of the graph Г(G) by T(G)= {πi(G), fori = 1,2, …,t(G)}, where t(G) is the number of connected components of Г(G). We also denote by π(n) the set of all primes dividingn, wheren is a natural number. Then ¦G¦ can be expressed as a product of m1, m2, …, mt(G), where mi’s are positive integers with π(mi) = πi. Thesem i ’s are called the order components ofG. LetOC(G) := {m 1,m 2, …,m t (G)} be the set of order components ofG. In this paper we prove that, if G is a finite group andOC(G) =OC(M), where M is a finite simple group witht(M) ≥ 2, thenG is neither Frobenius nor 2-Frobenius. 相似文献